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Document overview

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Technical content

Features

 Excellent Linearity  Extremely High Output Capability  Voltage Controlled Attenuator  Power Enable Featrure  Extremely Low Distortion  Optimal Reliability  Low Noise  Unconditionally Stable Under all Terminations  27.5 dB Typical Gain at 1218MHz  410mA Typical at 12VDC

Applications

 45MHz to 1218MHz Downstream Edge QAM RF Modulators  Headend Equipment

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140820 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 7 RFAM3790 Absolute Maximum Ratings Parameter Rating Unit DC Supply Over-Voltage (5 minutes) 14 V Storage Temperature -40 to +100 °C Operating Mounting Base Temperature -30 to +100 °C Moisture Sensitivity Level IPC/JEDEC J-STD-20 MSL 3 @260 °C Caution! ESD sensitive device. RoHS status based on EU Directive 2011/65/EU Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max General Performance V+= 12V; TMB=30°C; ZS=ZL=75Ω; Att=0dB Power Gain 27.0 dB f=45MHz 27.5 28.5 29.5 dB f=1218MHz Slope [1] 0.5 1.5 2.5 dB f=45MHz to 1218MHz Flatness of Frequency Response 0.5 1.0 dB f=45MHz to 1218MHz (Peak to Valley) Input Return Loss 18 dB f=45MHz to 1003MHz 16 dB f=1003MHz to 1218MHz Output Return Loss 15 dB f=45MHz to 1003MHz 15 dB f=1003MHz to 1218MHz Noise Figure 4.0 5.0 dB f=50MHz to 1218MHz Total Current Consumption (DC) 410 450 mA Attenuator V+= 12V; TMB=30°C; ZS=ZL=75Ω; Attenuator Range 0 to 20 dB Attenuator Voltage 0V to 12V Power Enable/Disable Amp enabled Logic high (3.3V) applied to power enable pin [2] Amp disabled Logic low (0V) applied to power enable pin [3]

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140820 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 7 RFAM3790 Parameter Specification Unit Condition Min Typ Max Distortion V+= 12V; TMB=30°C; ZS=ZL=75Ω; Att=0dB Adjacent Channel Power Ratio (ACPR); N=4 contiguous 256QAM channels -58 dBc Channel Power = 58dBmV; Adjacent channel up to 750 kHz from channel block edge -60 dBc Channel Power = 58dBmV; Adjacent channel (750 kHz from channel block edge to 6MHz from channel block edge) -63 dBc Channel Power = 58dBmV; Next-adjacent channel (6 MHz from channel block edge to 12 MHz from channel block edge) -65 dBc Channel Power = 58dBmV; Third-adjacent channel (12 MHz from channel block edge to 18 MHz from channel block edge) 2nd Order Harmonic (HD2); N=1 256QAM channel -63 dBc Channel Power = 66dBmV; In each of 2N contiguous 6 MHz channels coinciding with 2nd harmonic components (up to 1000MHz); 3rd Order Harmonic (HD3); N=1 256QAM channel -63 dBc Channel Power = 66dBmV; In each of 3N contiguous 6 MHz channels coinciding with 3rd harmonic components (up to 1000MHz); CTB -67 dBc VO=46dBmV, flat, 79 analog channels plus 75 digital channels (-6dB offset) [4], [6] XMOD -60 dBc CSO -70 dBc CIN 64 dB CTB -67 dBc VO=45dBmV, flat, 79 analog channels plus 111 digital channels (-6dB offset) [5], [6] XMOD -61 dBc CSO -70 dBc CIN 65 dB 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. Logic high is defined as power enable voltage >2V 3. Logic low is defined as power enable voltage <0.4V 4. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +46dBmV flat output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. 5. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +45dBmV flat output level, plus 111 digital channels, -6dB offset relative to the equivalent analog carrier. 6. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140820 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 7 RFAM3790 Evaluation Board Assembly Drawing Note: The ground plane of the RFAM3790 module should be soldered onto a board equipped with as many thermal vias as possible. Underneath this thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete module DC power. In any case the module backside temperature should not exceed 100°C. EVALUATION-BOARD RFAM2790 ED A533 C8 R1 Fb1 TR3 TR2 TR1 ADJUST J1 J2 POWER ENABLE ATT GND RF_OUTRF_IN RFAM3790PCBA-410

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140820 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 7 RFAM3790 Evaluation Board Schematic 4.7nF 4.7nF DNI MM3Z5V6T1 2.7kΩ TGL34-33A 4.7nF 4.7nF DNI TQP200002 25V FB1 Bead 60Ω RFXF0006 RFXF0008 RF INPUT RF OUTPUT 4 5 4.7nF Power Enable Att. Adjust GND RFAM3790 4.7nF 4.7nF TQP200002 25V RFXF0009 Evaluation Board Bill of Materials (BOM) Designator Value Description Manufacturer Part Number C1 DNI optional to improve matching in application C2, C3, C4, C5, C6, C8, C9 4.7nF Capacitor, X7R, 50V, 10% C7 DNI optional to improve matching in application R1 2.7kΩ Resistor, TK200, 5% FB1 60Ω @ 100MHz Impedance Bead, DCR 0.1Ohm, 800mA Taiyo Yuden BK 1608HS600-T D1, D4 25V ESD Protection Triquint TQP200002 D2 5.6V Zener Diode, 200mW On Semiconductor MM3Z5V6T1G D3 33V Transient Suppressor Diode, 5% Diotec TGL34-33A T1 1:1 Transformer RFMD RFXF0006 T2 2.8:1 Transformer RFMD RFXF0008 T3 1:1 Transformer RFMD RFXF0009 U1 Amplifier RFMD RFAM3790

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140820 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 7 RFAM3790 Pin Out 4 5 9Power Enable Att. Adjust RF IN + RF IN - RF OUT - 12V OUT RF OUT + 5.6V V+ 12V V+ GND Pin Names and Descriptions Pin Name Description 1 Power Enable Logic Level (3.3V) Power Enable Control 2 Att. Adjust Voltage Adjustable Attenuator

3 RF IN (+) RF AMP Positive Input

4 RF IN (-) RF AMP Negative Input

5 RF OUT (-) RF AMP Negative Output

7 RF OUT (+) RF AMP Positive Output

8 5.6V V+ Supply Voltage 5.6V 9 12V V+ Supply Voltage 12V

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140820 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 7 RFAM3790 Package Outline Drawing (Dimensions in millimeters) PCB Metal Land Pattern (Dimensions in millimeters)