RF5222 RFMD | Alldatasheet
Document overview
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Technical content
Features
Single Power Supply 3.0V to 4.2V 26dB Minimum Gain, Input Matched to 50Ω 2.4GHz to 2.5GHz Frequency Range 11g POUT=+1 7dBm@3% T yp EVM, 125mA
Applications
IEEE802.11b/g/n WLAN 2.5GHz ISM Band Applica- tions Commercial and Consumer Systems Portable Battery-Powered Equipment Spread-Spectrum and MMDS Systems RF5222 3.0V to 4.2V, 2.4GHz to 2.5GHz Linear Power Amplifier RF5222PCBA-41X Fully Assembled Evaluation Board Rev A0 DS070717 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.45mm
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Supply Voltage -0.5 to +4.2 V DC Power Control Voltage (VREG) -0.5 to +3.2 V DC Supply Current 240 mA Input RF Power +10 dBm Operating Ambient Temperature -30 to +85 °C Storage Temperature -40 to +150 °C Moisture sensitivity JEDEC Level 2 ESD Human Body Model (HBM) 500 V Machince Model (MM) 125 V Parameter Specification Unit ConditionMin. Typ. Max. IEEE802.11g Temperature=+25°C, VCC=3.3V , VREG=3.1V pulsed at 1% to 100% duty cycle, Frequency=2450MHz, circuit per evaluation board schematic, unless otherwise specified Frequency 2.4 2.5 GHz IEEE802.11g IEEE802.11n Output Power 17 dBm At max data rate, OFDM modulation RMS, mean, VCC=3.3V modified output match EVM* 3.0 4.0 % RMS, mean Gain 26 31 dB At +17dBm RF P OUT and 54Mbps Gain Variance Over Temperature 1.5 ±dB -30°C to +85°C, 2.4GHz to 2.5GHz Power Detector POUT=8dBm 0.36 V POUT=1 7dBm 0.9 V Power Supply 3.0 3.3 4.2 V DC VREG Input Voltage 3.0 3.1 3.2 V DC Operating Output VSWR 10:1 The PA is stable, no spurs above -43dBm Input Return Loss -15 -10 dB Turn-on Time** 0.5 1.8 μS Output stable to within 90% of final gain Second Harmonic -43 dBm Fundamental frequency is between 2.4GHz and 2.5GHz; RFP OUT=+1 7dBm Current Consumption Quiescent Current 85 mA Data rate @< 3.5% EVM RMS, mean Operating Current 125 mA P OUT=+1 7dBm, VCC=3.3V , diff. output match required IREG Current 3.5 6 mA V CC=+3.3V DC Shutdown Current 8 10 μA Notes: *The EVM specification is obtained with a signal generator that has an EVM floor of less than 0.7%. **The PA must operate with gated bias voltage input at 1% to 99% duty cycles without any EVM or other parameter degradation. Caution! ESD sensitive device. The information in this publication is believed to be accurate and reliable. How- ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component cir- cuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revi- sion).
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Package Drawing Pin Function Description 1R F I N RF input. Input is matched to 50Ω and DC block is provided internally. 2V R E G Bias current control voltage for the first and second amplifier stage. 3P D E T E C T o r NC Power detector which provides an output voltage proportional to the RF output power level. May need external decoupling capacitor for PDETECT load sensitivity. May need external circuitry to bring output voltage to desired level. May be left unconnected if function is not desired. 4N C This pin may be left unconnected or may be connected to ground. 5R F O U T RF output. A DC blocking capacitor may be needed as this pin of the PA is a DC short to ground. 6V C 2 Voltage supply for second stage amplifier. External low frequency bypass capacitors should be connected if no other low frequency decoupling is employed. 7V C 1 Voltage supply for the first amplifier stage. External low frequency bypass capacitors should be connected if no other low frequency decoupling is employed. 8V C C Supply voltage for the bias reference and control circuit. May be connected with VC1 and VC2 (with a single sup- ply voltage). The 56pF bypass capacitor should be placed as close as possible to the IC for the best perfor- mance. Pkg Base GND The center metal base of the QFN package provides DC and RF ground as well as heat sink for the amplifier. 0.05 0.00 0.152 REF 0.50 0.40 -C-SEATING PLANE INDEX AREA -B- -A- 2.20 2.20
2 PLCS
0.10 C 0.10 C 0.10 MAX C AB0.10 M 0.31 0.21 0.65 0.28 0.18 1.20 1.00TYP Dimensions in mm. Shaded lead is pin 1.
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Pin Out RF IN VREG NC PDETECT VC2 RF OUT VCC VC1 8 7
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Theory of Operation and Application Information The RF5222 is a two-stage power amplifier (PA) with a minimum gain of 26dB in the 2.4GHz to 2.5GHz ISM band. The RF5222 has integrated input and interstage matching components thus allowing minimal bill of materal (BOM) parts count in end appli- cations. The RF5222 is designed primarily for IEEE802.11b/g/n WLAN applications where the available supply voltage and current are limited. This amplifier will operate to (and below) the lowest expected voltage made available by a typical PCMCIA slot in a laptop PC, and will maintain required linearity at decreased supply voltages. The device is provided in a 2.2mmx2.2mmx0.45mm, 8-pin, QFN with backside ground. The RF5222 requires only a single positive supply of 3.3V nomina l to operate to full specifications. Power control is provided through one bias voltage pin (VREG). The input DC blocking cap is provided internally and the evaluation board circuit (available from RFMD, Inc. (RFMD)) is optimized for 3.3VDC applications. For best performance, it is important to duplicate (as closely as possible) the layout of the evaluation board. The RF5222 has primarily been characterized with a voltage on VREG of 3.1VDC. If you prefer to use a bias voltage that is significantly different than 3.1V DC, or a different frequency than the recommended fre- quency range, contact RFMD Sales or Application Engineering for additional data and guidance. There is no required matching on the RF5222 input or inters tage circuits. Only the RF5222 output stage requires matching allowing the RF5222 to be implemented in applications requiring the fewest end product bill of materials (BOM) parts count and lowest BOM cost. In most cases, the capacitor used as pa rt of the RF5222 output matching circuit is also employed to accomplish DC-blocking. The RF5222PCBA evaluation board (availab le from RF Micro Devices, Inc. (RFMD)) is optimized for 3.3VDC supply input. For best results, the PA circuit layout from the evaluation board should be copied as closely as possible, particularly the ground layout and ground vias. Other configurations may also work, but the design process is much easier and quicker if the layout is copied from the RF5222 evaluation board. Gerber files of RFMD PCBA designs can be provided on request. The RF5222 is a very easy part to implement, but care in circuit layout and component selection is always advisable when designing circuits to operate at 2.5GHz. The RF5222 evaluation board layout and schematic are available using 0201 (US) size components which will help shrink the overall size of the total area of the PA and components of the intended design. Please contact RFMD Sales or Application Engineering for additional data and guidance.
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Application Schematic 1 μF 4.7 nH 0.1 μF56 pF VREG VCC 1.8 pF 4.7 nH 330 pF PDETECT 8 7 Bias Circuit Input Match Interstage Match Power Detector 50 Ω μstrip 10 pF RF OUT RF IN 35 mils 2Fo Filter
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Layout Board Size 1.2” x 1.2” Board Thickness 0.032”, Board Material FR-4
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. ACP versus POUT -70.0 -65.0 -60.0 -55.0 -50.0 -45.0 -40.0 -35.0 -30.0 -25.0 -20.0 Output Power (dBm) ACP (dBm) ACP1 2400MHz ACP1 2450MHz ACP1 2500MHz 2400MHz ACP2 2450MHz ACP2 2500MHz ACP2 EVM versus POUT 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Output Power (dBm) EVM (%) 2400MHz 2450MHz 2500MHz Operating Current versus POUT 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 160.0 Output Power (dBm) ICC (mA) 2400MHz 2450MHz 2500MHz PDETECT versus POUT 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Output Power (dBm) PDETECT (V) 2400MHz 2450MHz 2500MHz