RF5163L

RF5163 RFMD | Alldatasheet

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RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Optimum Technology Matching® Applied Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS VCC1 VCC1 GND P DETECT P DOWN VREG1GND RF IN GND RF OUT RF OUT RF OUT VCCVREG1 VREG2 VREG2 GND NC 15 14 13 8765 Bias RF5163 3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER

• 802.11b/g/n Access Points
• PCS Communication Systems
• 2.4GHz ISM Band Applications
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Broadband Spread-Spectrum Systems The RF5163 is a linear, medium-power, high-efficiency amplifier IC designed specif ically for low voltage opera- tion. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro- cess, and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters. The device is provided in a 4m mx4mm, 16-pin , leadless chip carrier with a backside ground. The RF5163 is designed to maintain linearity over a wide range of supply voltage and power output.
• Single 3.3V or 5V Power Supply
• +33dBm Saturated Output Power (typ.)
• 20dB Large Signal Gain (typ.)
• 2.0% EVM @ +26dBm, 54Mbps (typ.)
• Separate Power Detect/Power Down Pins
• 1800MHz to 2500MHz Frequency Range RF5163 3V-5V, 2.5GHz Linear Power Amplifier, Matte-Sn (Pb-free) Finish RF5163L 3V-5V, 2.5GHz Linear Power Amplifier, Sn-Pb Finish RF5163PCBA-41XFully Assembled Evaluation Board RF5163PCBA-WDFully Assembled Evaluation Board, With Driver Rev A12 061114

0.10 CABM

0.35 0.23 Pin 1 ID 0.20 R 2.25 1.95 SQ. 0.65 0.75

0.50 TYP

0.60 0.24 TYP 0.05 C 0.90 0.85 0.70 0.65 0.05 0.00 12° MAX -C- SEATING PLANE Shaded lead is pin 1. Dimensions in mm.

0.10 C A

2 PLCS

-A- 4.00 SQ.

0.10 C B

-B- 3.75 SQ

1.87 TYP

2.00 TYP

Package Style: QFN, 16-Pin, 4x4 RoHS Compliant & Pb-Free Product

Supply Voltage -0.5 to +5.5 V DC Power Control Voltage (VPC) -0.5 to 3.3 V DC Supply Current 1000 mA Input RF Power +15 dBm Operating Ambient Temperature -10 to +85 °C Storage Temperature -40 to +150 °C Moisture sensitivity JEDEC Level 3 Parameter Specification Unit ConditionMin. Typ. Max. Overall T=25° C, VCC=5.0V, VREG1,2=3V , Freq=2450MHz Frequency Range 2400 to 2500 MHz Compliance IEEE802.11g and IEEE802.11b Output Power +26 dBm With 802.11g modulation (54 Mbit/s) and meeting 802.11g spectral mask @ <2.5% maximum EVM (RMS, mean). EVM 2.0 % Increase over EVM floor; RF P OUT=+26dBm Gain 20 dB @ +6dBm RF Pin Input Impedance Ω Please see Theory of Operation. Output VSWR 10:1 No oscillation Power Down VCC and VCC1 are “ON” 0.6 V DC Pin 3 (P_DOWN) Voltage<0.6V DC VCC and VCC1 are “OFF” 4.0 5.0 V DC Pin 3 (P_DOWN) Voltage>2.5V DC Power Supply Operating Voltage 3.0 to 5.0 V Current Consumption 520 mA Power Down “ON”, P OUT=+26dBm 260 mA Idle current VREG (Bias) Voltage (VREG1, VREG2) 3.0 V VREG (Bias) Current (Total) 5 mA Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).

Pin Function Description Interface Schematic 1R F I N RF input. Matching network with DC-block required; see evaluation board schematic for details. See pin 14. 2V R E G 1 GND First stage bias circuit ground. Keep PCB traces short and connect immediately to ground plane. 3P D O W N Power down pin. Apply <0.6VDC to power up both VCC and VCC1. Apply 2.5VDC to 3.5VDC to power down. If function is not desired pin may be grounded. 4P D E T E C T The P_DOWN and P_DETECT pins can be used in conjunction with an external feedback path to provide an RF power control function for the RF5163. The power control function is based on sampling the RF drive to the final stage of the RF5163. If function is not desired, pin may be left unterminated. 5V R E G 1 First stage bias input - requires regulated voltage to maintain desired I CC. 6V R E G 2 Second stage bias input - requires regulated voltage to maintain desired I CC. May be tied to pin 5 input after series resistors. 7V R E G 2 GND Second stage bias circuit ground. Ground with a 10nH inductor. 8N C No connect (N/C). 9G N D Ground connection. For best performance, keep PCB trace lengths short. 10 RF OUT Same as pin 11. 11 RF OUT RF output and bias for the output stage. The power supply for the out- put transistor needs to be supplied to this pin. This can be done through a quarter-wave (λ/4) microstrip line that is RF grounded at the other end, or through an RF inductor that supports the required DC cur- rent. 12 RF OUT Same as pin 11. 13 GND Same as pin 8. 14 VCC1 Power supply pin for first stage. External low frequency bypass capaci- tors should be connected if no other low frequency decoupling is employed. 15 VCC1 Same as pin 14. 16 VCC Power supply pin for bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is employed. Pkg Base GND Ground connection. The back side of the package should be connected to the ground plane through as short a connection as possible, e.g., PCB vias under the device are recommended. See pins 1 and 2. RF OUT VCC BIAS RF IN

Theory of Operation and Application Information RF5163PCBA Evaluation Board The RF5163 is a two-stage device with a nominal gain of 20dB in the 2.4GHz to 2.5GHz I ndustrial, Scientific, and Medi- cal (ISM) band. The RF5163 is designed primarily for fi xed IEEE802.11g/n WLAN applications requiring exceptionally linear RF output powers of +23dBm to +28dBm. The RF5163 requires a single positive supply of 5.0V nominal to operate to full specifications. Power control is provided through two (2) separate and independent methods. The first method is through two (2) bias control pins (V REG1 and VREG2). In most applications, both V REG1 and VREG2 are tied together and used as a single control input. The second method is through the use of a dedicated Power Down (P_Down) pin. Applying less than (<) 0.6V DC to the RF5163 P_Down pin fully turns “ON” both VCC and VCC1 power circuits. Applying 2.5V DC to 3.5VDC to the RF5163 P_Down pin fully turns “OFF” both VCC and VCC1 circuits. Turning the RF5163 “ON” and/or “OFF” by using the P_Down pin is accom- plished without regard to system voltage regulator turn-on and turn-off settling time restraints. There is some external matching on the input and output of the RF5163, thus allowing the RF5163 to be used in other output of the device require a series DC-blocking capacitor. In some cases, a capacitor used as a matching component can also serve as the blocking cap. The circuits used on the RF5163PCBA and RF5163PCBA-WD Evaluation Boards are optimized for V CC=+5.0V DC operation. The RF5163 is not difficult to implement, however, care in printed circuit board layout and component selection is highly recommended when implementing 2.5GHz capable circuits. Critical passive components in the RF5163PCBA Evalua- tion Board circuit are interstage and output matching components (C13, C15, and C16). In these cases, high-Q (Quality factor) capacitors suitable for RF application are used on the evaluation board (an evaluation board bill of material (BOM) is available upon request). High-Q components are not required in every design, but it is strongly recommended that the initial design be implemented with the same components used on the RF5163PCBA Evaluation Board. After establishing initial baseline performance, less costly components may be substituted to evaluate performance impact. The input matching inductor L1 and the DC blocking capacitor C14 helps to tune the peak of the small-signal gain response as well as improve the linearity of the PA. The input impedance of the PA will not be 50Ω with this input match so do not use a Smith Chart for guidance for value selection and parts placement. With a 50Ω input into the input match as shown on the Evaluation Board schematic, the PA will perform as expected with an expected input return loss of ~-2dB. The input L1 should be placed with reference to the position as shown on the RF5163PCBA Evaluation Board schematic. The interstage matching capacitor, C13, along with the combined inductance of the internal bond wire, the short length of circuit board trace, and the parasitic inductance of the capacitor, tunes the peak of the small-signal gain response. The trace length between C13 and RF5163 pins 14 and 15 should be kept as close to the evaluation board schematic as pos- sible. The output matching capacitors are C15 and C16. These capacitors are placed with reference to position along trans- mission line segments TL1 and TL2, as shown on the RF5163PCBA Evaluation Board schematic. These segments should be duplicated as closely as possible. Due to variations in FR-4 characteristics and PCB manufacturer process variations, some benefit is obtained from small adjustments to TL1 and TL2 length when the evaluation board is dupli- cated. Prior to full scale manufacturing, the board layout of early prototypes should include some additional exposed ground areas around C15 and C16 to optimize this part of the circuit. The AC coupling capacitor, C10, may be placed very close to C15. The output match is complete at C15. R3 at RF5163 pin 4 (P_Detect) desensitizes the P_Detect line from the value of C12. Without R3, the value of C12 may affect error vector magnitude (EVM) under certain operational conditions.

The RF5163PCBA-WD Evaluation Board employs the RF2373 as a driver amplifier at the input to the RF5163 (as final stage power amplifier IC). The RF2373 is a very high linearity single stage low noise amplifier (LNA)/driver amplifier that demonstrates approximately 15dB of gain from 2400MHz to 2500MHz and is capable of delivering +6dBm RF POUT at < 1% EVM (RMS, mean). The RF5163PCBA-WD Evaluation Board is designed to maximize both useful gain and ultra lin- ear transmit power performance. Typical RF5163PCBA-WD Evaluation Board specifications are shown in the Table below: Typical RF5163PCBA-WD Evaluation Board Specifications: All application information described above for the RF5163PCBA Evaluation Board applies directly to the RF5163PCBA- WD Evaluation Board. On the RF5163PCBA-WD Evaluation Board schematic, reference designator U1 identifies the RF2373 and reference designator U2 identifies the RF5163. VCC (nominal+5.0V DC) is supplied to both U1 (RF2373) and U2 (RF5163) simulta- neously through P2, two-pin header connector. VCC is applied to the RF2373 through RF2373 pin 4 (RF OUT). Inductor L4 is positioned to isolate the power supply line from C7 (RF2373 output tuning capacitor). R3 on RF2373 pin 3 sets the bias current for RF2373 VBIAS voltage. As employed within the RF5163PCBA-WD Evalua- tion Board, the RF2373 is biased for V BIAS voltage of +3.0V DC. RF2373 bias voltage is supplied through P3, two-pin header connector. Critical RF5163 input and output tuning components are L2, C11, C13, C16, and C17. The resistor values for R7 and R8 have changed from the original values in the RF5163 evaluation board schematic. Critical RF2373 input and output tun- ing components are C6, C7 and L4. In these cases, high-Q capacitors suitable for RF applications are used on the RF5163PCBA-WD Evaluation Board (bill of material (BOM) is available upon request). 50Ω transmission line segments are employed at both the input and output of the RF2373. It is strongly recommended that the construction of these transmission line segments be followed as closely as possible to yield best gain, gain flatness, and linear amplifier driver performance. The RF5163PCBA-WD Evaluation Board includes two (2) locations where separate and independent 3dB loss pads may be populated. These two (2) 3dB loss pads are provided to reduce the overall gain of the RF2373+RF5163 amplifier combination (which can achieve 40dB gain if not reduced through the use of the available 3dB loss pads). If no gain reduction is desired simply place resistors R11 and R2 as zero (0) resistor values. If only a single 3dB loss pad is desired for circuit operation it is recommended to use the R9, R10, R11 3dB loss pad positioned in series with and before RF2373 pin 1 (RF IN). Place resistor R2 as a zero (0) value resistor. The RF5163PCBA-WD Evaluation Board has been characterized with a V CC voltage of +5.0V DC, RF5163 V REG1 and VREG2 voltage of +3.0VDC, and RF2373 bias (VBIAS or VPD) voltage of +3.0VDC. These are ideal operating conditions to achieve the best combination of gain and ultra linear transmitter performance at an RF P OUT=+26dBm. However, the RF5163PCBA-WD Evaluation Board will operate from a wide range of VCC and control voltages. If a different set of VCC and/or control voltages is desired, contact RFMD Sales or Applications Engineering for additional data and guidance. Parameter Min. Typ. Max. Unit Condition Frequency Range 2400 2500 MHz T=25°C, V CC=+5.0V DC; All VREG voltages=+3.0V DC Output Power +26 dBm EVM 2.5 % RMS, mean (IEEE802.11g/n; Maximum Data Rate) Gain 33 40 dB -10dBm RF Pin Power Supply Operating Voltage (VCC)5 . 0 V DC Bias Voltage (VREG)3 . 0 V DC Current Consumption 660 mA RF P OUT=+26dBm; RF PIN=-10dBm; P_Down is “ON”, IEEE802.11g/n Modulation @ Maximum Data Rate

Evaluation Board Schematic RF5163PCBA Evaluation Board (2400MHz to 2500MHz) C14 1.5 pF 1.5 nH RF IN 15 14 13 8765 C12 330 pF 1 nF 10 nH C16 3.3 pF C15 0.7 pF C10 10 pF RF OUT 1 nF C13 6.8 pF 50 Ω μstrip P_DOWN 750 Ω P_DETECT 300 Ω 1 nF 200 Ω 6.8 nH Coilcraft 50 Ω μstrip 1 μF Bias VREG 5163400, r. A VCC TL3 TL3=15 mils from the IC GND P2-2 PDETECT P2-4 P_DOWN P2-1 VREG 4.7 μF GND C20 4.7 μF P1-2 VCC P3-1 VPD1 GND1 TL1 TL1=50 mil (50 Ω) TL2 TL2=265 mil (50 Ω)

Evaluation Board Schematic RF5163PCBA-WD Evaluation Board (2400MHz to 2500MHz) C14 1.5 pF L2* 1.5 nH 15 14 13 8765 Bias C18 330 pF C20 1 nF 10 nH C16* 3.9 pF C17* 1 pF C15 10 pF RF OUT C11* 2.2 nF C13* 7.5 pF P_DOWN 750 Ω P_DETECT 100 Ω C19 1 nF 150 Ω C21 4.7 uF 6.8 nH Coilcraft 0603 C12 1 uF 300 Ω 18 Ω 300 Ω 2.0 pF NPP 4.7 nH 1 nF 10 nF 0 Ω 4.7 uF 220 pF 560 Ω C10 220 pF 1 nF VPD 1 nF FB1 TBD

2 GND

HDR_1X2 VPD 3 4

51 RF IN

300 Ω 300 Ω C11 should be placed 15 mils from the PA 4.7 uF R11 18 Ω50 Ω μstrip 50 Ω μstrip 50 Ω μstrip 50 Ω μstrip 50 Ω μstrip 50 Ω μstrip 50 Ω μstrip Test Coupon J3 J4 50 Ω μStrip XX mil TL1=45 mil (50 Ω) from chip VREG P6-1 VREG P6-2 P_DETECT GND P6-4 P_DOWN P1* GND P1-2 VCC P5-1 VCC VCC VCC VCC HDR_1X2 VCC

1 GND

2373+5163410, r2 L2 should be placed 78 mils (50 Ω) from the PA TL2=C17 should be placed at 214 mil (50 Ω) from the PA TL1=C16 should be placed at 30 mil (50 Ω) from the PA TL3=C13 should be placed 10 mil (50 Ω) from the PA 1. Parts with * should be populated as closely as possible to the instructions for each part. Notes: 2. The following parts should be placed as follows:

• For 3 dB pad before the driver, populate R9, R10 and R11. If the 3 dB pad is not needed, populate R11 with a 0 Ω resistor.
• For 3 dB pad in between the driver and PA, populate R2, R4 and R5. If the 3 dB pad is not needed, populate R2 with a 0 Ω resistor.

RF5163PCBA Evaluation Board (2400MHz to 2500MHz) Board Size 2.0” x 2.0” Board Thickness 0.031”, Board Material FR-4, Multi-Layer

RF5163PCBA-WD Evaluation Board (2400MHz to 2500MHz) Board Size 2.0” x 2.0” Board Thickness 0.031”, Board Material FR-4, Multi-Layer

Gain and RF POUT versus Frequency (MHz), VCC=+5VDC, VREG1=VREG2=+3VDC, T=+25°C 54Mbps, IEEE802.11g 18.5 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0 26.5 Frequency (MHz) G(dB), P(dBm) G(dB) vs. F(MHz) RF Pout (dBm) vs. F(MHz) ICC (A) (Total) versus Frequency (GHz) 0.50 0.51 0.52 0.53 0.54 0.55 Frequency (GHz) Current Consumption (Total, A) P_Detect versus P_Out, VCC=+5.0VDC 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 P_Out (dBm) P_Det (V) Vreg:3.3 Vreg:3.0 EVM (%) versus Frequency (GHz) 1.20 1.40 1.60 1.80 2.00 2.20 2.40 Frequency (GHz) EVM (%, RMS, mean) RF POUT versus EVM and ICC (Total) 0.0 1.0 2.0 3.0 4.0 5.0 POUT (dBm) EVM (%) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ICC_Total (A) EVM (%) ICC_Total(mA)