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Technical content

Features

 Single Power Supply 3.0V to 5.0V  +21dBm, <4.0%EVM, 185mA atV CC=3.3V  28dB Typical Small Signal Gain  50 Input and Interstage Match- ing  2400MHz to 2500MHz Fre- quency Range  +23dBm, <4%EVM, 250mA at V CC=5.0V

Applications

 IEEE802.11b/g/n WiFi Applica- tions  2.5GHz ISM Band Applications  Commercial and Consumer Sys- tems  Portable Battery-Powered Equip- ment  Spread-Spectrum and MMDS Systems RF5125 Standard 25 piece bag RF5125SR Standard 100 piece reel RF5125TR7 Standard 2500 piece reel RF5125WL50PCK-41X Assembled Evaluation Board Kit (5.0V Tune) RF5125WL33PCK-41X Assembled Evaluation Board Kit (3.3V Tune) DS110617 Package Style: QFN, 16-Pin, 3mmx3mmx0.9mm

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Supply Voltage 6.0 V Power Control Voltage (VREG)4 . 0 V DC Supply Current 500 mA Input RF Power +5 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Moisture Sensitivity MSL2 Parameter Specification Unit ConditionMin. Typ. Max. Compliance IEEE802.11b/g IEEE802.11n** Typical Conditions Temp=25°C, VREG 1 and 2=2.85V , Freq=2.4Ghz to 2.5GHz, Duty Cycle=1 to 100% unless otherwise noted. Frequency 2.40 2.5 GHz Output Power TBD 21 dBm VCC=3.3V, V REG=2.85V, 54Mbps, OFDM mod- ulation EVM 3.3 4.0 % V CC=3.3V, P OUT=21dBm Adjacent Channel Power ACP1 -34 -30 dBc V CC=3.3V, V REG=2.85V , POUT=23.5dBm mea- sured with the standard IEEE802.11b wave form at 1Mbps. ACP2 -54 -50 dBc V CC=3.3V, V REG=2.85V , POUT=23.5dBm mea- sured with the standard IEEE802.11b wave form at 1Mbps. Output Power TBD 23 dBm VCC=5V , VREG=2.85V, 54Mbps, OFDM modu- lation EVM 3.3 4.0 % P OUT=23dBm, RMS, mean Adjacent Channel Power ACP1 -34 -30 dBc V CC=5.0V, V REG=2.85V , POUT=23.5dBm mea- sured with the standard IEEE802.11b wave form at 1Mbps. ACP2 -54 -50 dBc V CC=5.0V, V REG=2.85V , POUT=23.5dBm mea- sured with the standard IEEE802.11b wave form at 1Mbps. Harmonics 2F0 -20 TBD dBm/MHz Measured at V CC=3.3V, VREG=2.85V at POUT=23dBm with 11b waveform at 1Mbps 3F0 -35 TBD dBm/MHz Measured at V CC=3.3V, VREG=2.85V at POUT=23dBm with 11b waveform at 1Mbps Harmonics 2F0 -10 TBD dBm/MHz Measured at V CC=5.0V, VREG=2.85V at POUT=25dBm with 11b waveform at 1Mbps 3F0 -50 TBD dBm/MHz Measured at V CC=5.0V, VREG=2.85V at POUT=25dBm with 11b waveform at 1Mbps Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Parameter Specification Unit ConditionMin. Typ. Max. Input return loss -10 dB Gain 27.5 29 TBD dB At both VCC=3.3V and 5.0V Gain Variance 0.75 ±dB -40°C to +85°C Power Detector (P_detect) 0.1 1.3 V For POUT=0dBm to 23dBm with V CC=3.3V , 11b 0.1 2.5 V For POUT=0dBm to 25dBm with V CC=5.0V , 11b Current Operating 185 210 mA VCC=3.3V, P OUT=+21dBm 250 280 mA VCC=5.0V, P OUT=23dBm Quiescent 95 TBD mA RF=OFF, VCC=3.3V TBD TBD mA RF=OFF, VCC=5.0V IREG 10 mA Shutdown 10 A Current Operating 100 105 mA at +18dBm RF POUT and 54Mbps datarate at <2% EVM RMS, mean Quiescent 75 mA at +18dBm RF POUT and 54Mbps datarate at <2% EVM RMS, mean IREG 10 mA at +18dBm RF POUT and 54Mbps datarate at <2% EVM RMS, mean Shutdown 10 A at +18dBm RF POUT and 54Mbps datarate at <2% EVM RMS, mean Power Supply 3.0 3.3 5 VDC Operating VREG1, VREG2 Input Voltage 2.75 2.85 3.0 V DC Operating VREG1, VREG2 Current 51 0 m A V CC=+3.3V DC 51 0 m A V CC=+5.0V DC Output VSWR 10:1 Input Return Loss -15 -10 dB Turn-on time* .5 1.0 uSec Output stable to within 90% of final gain

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Pin Function Description Interface Schematic 1N C Not connected. May be connected to ground (GND). 2R F I N RF input. See evaluation board schematic for details. 3R F I N RF input. See evaluation board schematic for details. See pin 2. 4N C Not connected. May be connected to ground (GND). 5N C Do not connect. Note: VCC voltage may be applied to this pin without damage to, or affect- ing the performance of, the RF5125. 6V R E G 1 Bias current control voltage for the first stage. 7V R E G 2 Bias current control voltage for the second stage. The VREG2 pin may be connected to VREG1 through an external resistor bridge. 8P D E T E C T ( o r N/C*) Provides an output voltage proportional to the output RF level. *In applications where the PDETECT function is not desired, this pin may be left unconnected. 9N C No-connect. 10 RF OUT RF output. 11 RF OUT Same as pin 10. See pin 10. 12 VCC2 Power supply for second stage amplifier. Connect as shown on evaluation board schematic. 13 NC Not connected. May be connected to ground (GND). 14 VCC1 Power supply for first stage amplifier. Connect as shown on evaluation board schematic. 15 NC Not connected. May be connected to ground (GND). 16 VCC B Supply voltage for the bias reference and control circuits. May be con- nected with VC1 and VC2 (single-supply voltage). Pkg Base GND The center metal base of the QFN package provides DC and RF ground as well as heat sink for the amplifier. INPUT MATCH VCC INTERSTAGE MATCH RF OUT BIAS

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Package Drawing Pin Out Shaded lead is pin 1. Dimensions in mm. 0.90 0.85 0.05 C 0.05 0.00 0.70 0.65 12° MAX -C- SEATING PLANE 0.60 0.24 TYP 0.50 0.30 PIN 1 ID R.20

0.10 C ABM

0.30 0.18 0.50 1.65 1.35 SQ.

1.50 TYP

0.10 C A

2 PLCS-A-

3.00

0.10 C B

2 PLCS

1.37 TYP

2 PLCS 2.75 SQ 3.00 -B- RF IN RF IN NC NCNC NC VREG1 VREG2 PDETECT RF OUT VCC B VCC1 NC RF OUT VCC2 16 15 14 13 5 6 7 8 NC

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Theory of Operation and Application Information The RF5125 is a two-stage Power Amplifier designed primarily for IEEE802.11g/n WiFi applications where the available supply RF5125 has an integrated input and interstage match to 50 . Only the output stage requires matching. This amplifier will operate to and below the lowest expected voltage made available by a typical CardBus or PCMCIA card slot in a laptop personal computer. The RF5125 operates from a single supply voltage of 3.0V to 5.0V to deliver specified performance. Power control is provided through two control pins (VREG1 and VREG2). For the best performance and lower current, there is a 68  resistor (not required at 5V operation) placed in series with VREG2 control line. If customer desires, VREG1 and VREG2 can be connected together prior to the series resistor on VREG2 (see applications schematic for details). The output match of the RF5125 provides flexibility to optimize performance on the customer board using minimum compo- nent count and the lowest cost bill of materials (BOM). The ou tput match topology follows that of a low pass network and it incorporates a series capacitor as the last component which can also serve as a DC block. Depending on the voltage of opera- tion, the output match will require either one or two shunt capacitors to optimize the return loss and bandwidth. In the case of a 3.3V operation, only one capacitor is required while the 5V operation requires two. The value of the shunt tuning capacitor in the 3.3V case is 2.2pF and its placement is approximately 112mils from the package RF output pin. This location is marked with the reference designator C10 on the evaluation board. For the 5V operation, the first tuning capacitor value is 1.5pF and its placement approximately 90mils from the package (referen ce designator C10). The second tuning cap value for the 5V operation is 1pF and its placement is approximately 200mils from the package (C11 reference designator). DC bias for the last stage is provided through an RF Choke connected directly at the node between the transistor's collector and output match. This inductor plays a small role on the output match performanc e so its value must be carefully chosen as to not detune the circuit or lower its Q. RFMD recommends to use a high-Q inductor with a range in value between 5.6nH to 7.5nH. PCB layout and material will affect optimum value and placement for these tuning capacitors. For fastest implementation and best results when designing with the RF5125, RFMD recommends that the evaluation board be copied as close as possible in particular the grounds and distance of components from the package pins (refer to schematic for additional details). The initial PCB layout should include exposed ground area near the shunt tuning capacitors to allow fine tuning of the output match. Smith Chart-based design tools may be used to assist in dete rmining the desired capacitor value and transmission line physi- cal characteristics. Note that the use of a single capacitor ou tput circuit match results in a more sensitive match and slightl y reduced RF5125 bandwidth. In this configuration, the RF5125 will exhibit sufficient output spectrum bandwidth to meet IEEE802.11b/g requirements when matched properly. Upon request, RFMD can provide Gerber files for the evaluation board and BOM. High-Q tuning components are not required in every RF5125 based design. However, it is a good practice and highly recommended to start the initial tune with high-Q compo- nents then substitute with standard parts and compare against the initial performance. RFMD experience indicates that yield improvements offset the cost difference between "High-Q" and "Low-Q" components. The RF5125 had been primarily characterized with a V REG voltage of 2.85V. However, the RF5125 will operate from a wide range of bias control voltages and within a wide range of frequencies (typically 1800MHz to 2800MHz). If a bias control volt- age other than 2.85V is preferred or if a different frequency ra nge (other than 2.4GHz to 2.5GHz) is desired, please contact RFMD Sales or Applications Engineering for assistance.

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Schematic - 5V 50 stripJ1 RF IN 1 nF 1 nF C9 330 pF 0  VREG1 and 2 PDETECT C10 1.5 pF 6.8 nH Coilcraft 7.5 nH 1 F 1 FC1 1 nF VCC GND P2-1 PDETECT P2-3 VREG2 P2-4 VREG1 HDR_1x4

1 GND

50 strip RF OUT C12 10 pF 16 15 14 13 5 6 7 8 Notes: 1. Pins 1, 4, 13, and 15 may be left as No Connect. *DNP=Do Not Place 2. C2 and C3 bypass caps can be removed if VREG1 and VREG2 are supplied with clean voltages. 1 1 1P3-1 VCC 2C8 4.7 F C13 DNP* TL TL = 200 mils (50 ) from IC (or 55 mils from center of C13 pad to center of C11 pad) TL TL = 90 mils (50 ) from IC (Measured to the center of C10 pad) GND VCCP1-1 5125400, r.- 56  TL C11 1.0 pF 3  1.8 k

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Schematic - 3.3V 50 stripJ1 RF IN 1 nF 1 nF C9 330 pF 68  VREG1 and 2 PDETECT C10 2.2 pF 6.8 nH Coilcraft 7.5 nH 1 F 1 FC1 1 nF VCC GND P2-1 PDETECT P2-3 VREG2 P2-4 VREG1 HDR_1x4 50 strip RF OUT C12 10 pF 16 15 14 13 5 6 7 8 Notes: 1. Pins 1, 4, 13, and 15 may be left as No Connect. 2. C2 and C3 bypass caps can be removed if VREG1 and VREG2 are supplied with clean voltages. *DNP=Do Not Place 1 1 1P3-1 VCC 2C8 4.7 F C11 DNP TLTL TL = 112 mils (50 ) from IC (Measured to center of C10 pad) GND VCCP1-1 5125400, r.- 27  0 

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.031”, Board Material FR-4, Multi-Layer

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.031”, Board Material FR-4, Multi-Layer

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5V Operation Typical Performance EVM versus Output Power over Frequency VCC=5.0V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Output Power (dBm) EVM (%)

2400 MHz

2450 MHz

2500 MHz

Gain versus Output Power over Frequency VCC=5.0V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C 26.0 28.0 30.0 32.0 Output Power (dBm) Gain (dB) ICC versus Output Power over Frequency VCC=5.0V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 Output Power (dBm) ICC (A) PDETECT versus Output Power over Frequency VCC=5.0V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Output Power (dBm) PDETECT (V)

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3.3V Operation Typical Performance EVM versus Output Power over Frequency VCC=3.3V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 Output Power (dBm) EVM (%) Gain versus Output Power over Frequency VCC=3.3V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C 24.0 26.0 28.0 30.0 32.0 Output Power (dBm) Gain (dB) ICC versus Output Power over Frequency VCC=3.3V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 Output Power (dBm) ICC (A) PDETECT versus Output Power over Frequency VCC=3.3V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C 0.0 0.5 1.0 1.5 2.0 Output Power (dBm) PDETECT (V)

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. to 8inch gold over 180inch nickel. Figure 1. PCB Metal Land Pattern (Top View)

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. provided in the master data or requested from the PCB fabrication supplier. The PCB land pattern has been designed with a thermal pad that matches the die paddle size on the bottom of the device. quantity of vias be increased by a 4:1 ratio to achieve similar results. Figure 2. PCB Solder Mask Pattern (Top View)

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RoHS Compliant: Yes Package total weight in grams (g): 0.015 Compliance Date Code: N/A Bill of Materials Revision: - Pb Free Category: e3 Pb Cd Hg Cr VI PBB PBDE Die 000000 Molding Compound 000000 Lead Frame 000000 Die Attach Epoxy 000000 Wire 000000 Solder Plating 000000 * DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment RoHS* Banned Material Content Bill of Materials Parts Per Million (PPM) This RoHS banned material content declaration was prepared solely on information, including analytical data, provided to RFMD b y its suppliers, and applies to the Bill of Materials (BOM) revision noted above.