RF2484_06 RFMD | Alldatasheet
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RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Optimum Technology Matching® Applied Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS GaAs pHEMT GND QREF IREF ISIG QSIG GND VCC PD RF OUT GND GND GND VCC GND GND LO Σ -45° +45° 7 86 9 15161 RF2484 DIRECT QUADRATURE MODULATOR
- Dual-Band CDMA Base Stations
- TDMA/TDMA-EDGE Base Stations
- GSM-EDGE/EGSM Base Stations
- W-CDMA Base Stations
- WLAN and WLL Systems
- GMSK,QPSK,DQPSK,QAM Modulation The RF2484 is a monolithic integrated quadrature modu- lator IC capable of universal direct modulation for high- frequency AM, PM, or compound carriers. This low-cost IC features excellent linearity, noise floor, and over-tem- perature carrier suppression performance. The device implements differential amplifiers for the modulation inputs, 90° carrier phase shift network, carrier limiting amplifiers, two matched double-balanced mixers, sum- ming amplifier, and an output RF amplifier which will drive 50Ω from 800MHz to 2500MHz. It is packaged in a small industry-standard QFN 16-pin plastic package.
- Typical Carrier Suppression>35dBc, Sideband Suppression>35dBc over temperature with highly linear operation
- Noise Floor better than -152dBm/Hz from 800MHz to 2200MHz
- Single 5V Power Supply RF2484 Direct Quadra ture Modulator RF2484PCBA-410 Fully Assembled Evaluation Board Rev A7 061115 12° MAX 0.05 0.00 0.75 0.65 1.00 0.90 C 0.05 Dimensions in mm. Shaded pin is lead 1. A 4.00 2.00 1.50 SQ. 4.00 2.00 1.60
2 PLCS
0.10 C A
0.10 C ABM
3.20 0.75 0.50
0.10 C B
2 PLCS-B-
0.80 TYP 0.45 0.28 3.75 3.75 Package Style: QFN, 16-pin, 4x4 RoHS Compliant & Pb-Free Product
Supply Voltage -0.5 to +7.5 V DC Input LO and RF Levels +10 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Parameter Specification Unit ConditionMin. Typ. Max. LO Input T=25°C, V CC=5V , VREF=4.1V; I and Q driven single-ended Frequency Range 800 2500 MHz Power Level -6 +6 dBm Input Impedance 45-j95 Ω At 880MHz 52-j54 Ω At 1960MHz 58-j50 Ω At 2140MHz 63-j40 Ω At 2400MHz Modulation Input Frequency Range DC 250 MHz Reference Voltage (VREF)4 . 1 V Input Resistance 30 k Ω Input Bias Current 40 μA RF Output (880MHz) LO= -5dBm at 880MHz; Single sideband testing unless otherwise noted CDMA Output Channel Power -12 dBm For ACPR=-72dBc; I&Q Amplitude=1.1V PP (single-ended) CDMA ACPR -72 dBc Channel Power=-12dBm; see Test Setup for detailed information Carrier Suppression 50 dBc T=25°C; P OUT=-10dBm; optimized I,Q DC offsets Carrier Suppression over Temperature 35 dBc Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT=-10dBm Sideband Suppression 50 dBc T=25°C; P OUT=-10dBm; optimized I,Q amplitude and phase balance Sideband Suppression over Temperature 35 dBc Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT=-10dBm Broadband Noise Floor -152.5 dBm/Hz At 20MHz offset, 30kHz res BW, V CC=5V; ISIG, QSIG, IREF , and QREF tied to VREF EVM 2.3 % See Test Setup for detailed information Phase Error 1 ° RMS See Test Setup for detailed information Rho .9993 See Test Setup for detailed information Output Impedance 28-j72 Ω RF Output (1960MHz) LO=-5dBm at 1960MHz; Single sideband testing unless otherwise noted PCS CDMA Output Power -13 dBm For ACPR=-72dBc; I&Q Amplitude=1.2V PP (single-ended) PCS CDMA ACPR -72 dBc Channel Power=-13dBm; see Test Setup for detailed information Carrier Suppression 50 dBc T=25°C; P OUT=-13dBm; optimized I,Q DC offsets Carrier Suppression over Temperature 35 dBc Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT=-13dBm Sideband Suppression 50 dBc T=25°C; P OUT=-13dBm; optimized I,Q amplitude and phase balance Sideband Suppression over Temperature 35 dBc Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT=-13dBm Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter Specification Unit ConditionMin. Typ. Max. RF Output (1960MHz) cont’d Broadband Noise Floor -154.5 dBm/Hz At 20MHz offset, 30kHz res BW, V CC=5V; ISIG, QSIG, IREF , and QREF tied to VREF EVM 2.3 % See Test Setup for detailed information Phase Error 1 ° RMS See Test Setup for detailed information Rho .9988 See Test Setup for detailed information Output Impedance 46-j22 Ω RF Output (2140MHz) LO= -5dBm at 2140MHz; Single sideband testing unless otherwise noted W-CDMA Output Channel Power -16 dBm For ACPR=-60dBc; I&Q Amplitude=1.4V PP (single-ended) W-CDMA ACPR -60 dBc Channel Power=-16dBm; see Test Setup for detailed information Carrier Suppression 50 dBc T=25°C; P OUT=-13dBm; optimized I,Q DC offsets Carrier Suppression over Temperature 35 dBc Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT=-13dBm Sideband Suppression 50 dBc T=25°C; P OUT=-13dBm; optimized I,Q amplitude and phase balance Sideband Suppression over Temperature 35 dBc Temperature cycled from -40°C to +85°C after optimization at T=25°C; POUT=-13dBm Broadband Noise Floor -152 dBm/Hz At 20MHz offset, 30kHz res BW, V CC=5V; ISIG, QSIG, IREF , and QREF tied to VREF EVM 5.9 % See Test Setup for detailed information Phase Error 2.4 ° RMS See Test Setup for detailed information Rho .9961 See Test Setup for detailed information Output Impedance 58-j16 Ω Power Down Turn On/Off Time 100 ns PD Input Resistance 50 k Ω Power Control “ON” 2.8 V Threshold voltage Power Control “OFF” 1.0 1.2 V Threshold voltage Power Supply Voltage 5.0 V Specifications 4.5 6.0 V Operating Limits Current 66 70 mA 25 μAP o w e r D o w n
Pin Function Description Interface Schematic 1G N D Ground connection. This pin should be connected directly to the ground plane. 2G N D Same as pin 1. 3G N D Same as pin 1. 4L O The input of the phase shifting network. This pin has an internal DC blocking capacitor. This port is voltage-driven so matching at different frequencies is generally not required. 5G N D Same as pin 1. 6V C C Power supply. An external capacitor is needed if no other low frequency bypass capacitor is nearby. 7P D Power Down control. When this pin is "low," all circuits are shut off. A "low" is typically 1.2V or less at room temperature.When this pin is "high" (V CC), all circuits are operating normally. If PD is below VCC, out- put power and performance will be degraded. Operating in this region is not recommended, although it might be useful in some applications where power control is required. 8R F O U T RF Output. This pin has an internal DC blocking capacitor. At some fre- quencies, external matching may be needed to optimize output power. A small amount of DC current may be present at this output. As a result, if the voltage at this pin is measured using a high impedance probe, some DC voltage may be observed at this output. 9G N D Same as pin 1. 10 VCC Same as pin 6. 11 GND Same as pin 1. 12 GND Same as pin 1. 13 Q SIG Baseband input to the Q mixer. This pin is DC coupled. The input drive level determines output power and linearity performance; for better car- rier suppression, sideband suppression, and dynamic range, the drive level should be as high as possible to meet the required linearity perfor- mance. The recommended DC level for this pin is 4.1V. For optimum carrier suppression, the DC voltages on I REF , Q REF , I SIG and Q SIG should be adjusted slightly to compensate for inherent undesired internal DC offsets; for optimum sideband suppression, phase and signal amplitude on IREF , Q REF , I SIG and Q SIG should be adjusted slightly to compensate for inherent undesired internal off- sets. See RFMD AN0001 for more detail. 14 I SIG Baseband input to the I mixer. This pin is DC coupled. The input drive level determines output power and linearity performance; for better car- rier suppression, sideband suppression, and dynamic range, the drive level should be as high as possible to meet the required linearity perfor- mance. The recommended DC level for this pin is 4.1V; see pin 13 for more information. 15 I REF Reference voltage for the I mixer. This voltage should be the same as the DC voltage supplied to the I SIG pin. A voltage of 4.1V is recom- mended; see pin 13 for more information. The SIG and REF inputs are inputs of a differential amplifier. Therefore the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, the Q SIG and Q REF also need to be swapped to maintain the correct phase. It is also possible to drive the SIG and REF inputs in a differential mode. This will increase the gain. LO 200 Ω PD VCC RF OUT 100 Ω 1 p VCC 100 Ω 1 p VCC 100 Ω 1 p VCC
Pin Function Description Interface Schematic 16 Q REF Reference voltage for the Q mixer. This voltage should be the same as the DC voltage supplied to the Q SIG pin. A voltage of 4.1V is recom- mended; see pin 13 for more information. Pkg Base GND Ground connection. The package base should be connected to the ground plane. 100 Ω 1 p VCC
The above setup was used to evaluate the RF2484 under CDMA and W-CDMA modulation conditions. An AMIQ was required to provide the appropriate DC reference voltage (4.1V) for the I and Q pins. I and Q were driven single-endedly; differential drive may improve performance. A PC-controlled Rohde & Schwarz AMIQ generated the CDMA I and Q sig- nals. In order to reduce AMIQ noise contributions to adjacent channel power, W-CDMA baseband signals were filtered using a high order low pass filter before application to the RF2484. EVM, Phase Error, and Rho To measure EVM, phase error, and Rho, signals were generated using the AMIQ and decoded with the Agilent VSA. For CDMA Cellular and PCS, I and Q input signals were generated with the Pilot Channel active, 32x oversampling and base station equifilters. For W-CDMA, the Common Pilot Channel was active with 8x oversampling and a root cosine filter. In all cases, relative signal amplitude levels were adjusted to optimize signal quality. CDMA Modulation Setup (Cellular and PCS) To measure ACPR, I and Q input signals were generated using the following settings:
- Pilot Channel active
- Sync Channel active
- Paging Channel active
- 6 Traffic Channels active
- 32x Oversampling
- Base Station equifilter W-CDMA Modulation Setup To measure W-CDMA ACPR, I and Q input signals were generated using the following settings in the AMIQ:
- P-CPICH (Common Pilot Channel) active
- P-SCH (Sync Channel) active
- P-CCPCH (Primary Common Control Physical Channel) active
- P-ICH (Page Indicator Channel) Active
- DL-DPCCH (Dedicated Physical Control Channel) active
- 6 DPCH (Dedicated Physical Channels) active
- 8x Oversampling Rohde & Schwarz AMIQ 1110.2003.02 RF2484 Evaluation Board Rohde & Schwarz FSIQ 1119.6001.26 Hewlett-Packard 8665B I SIG RF OUT LO IN I REF Q SIG Q REF Agilent 66332A VCC VPD Agilent 89441 Vector Signal Analyzer
-45° +45° 7 86 9 15161 4LO VCC PD RF OUT VCC QSIG ISIG QREF IREF 100 nF3 pF 100 nF3 pF 100 nF3 pF 100 nF 100 nF Σ
Evaluation Board Schematic VCC VREF/QREF IREF 100 nF 3 pF 100 nF 3 pF 100 nF 3 pF 3 pF 100 nF LO RFOUTVCC QSIG ISIG R1a* 0 Ω 0 Ω -45° +45° 7 86 9 15161 Σ CON3 P1-1 VCC GND GND CON3 P2-3 IREF GND P2-1 VREF/QREF 2484400- NOTES: 1. R1 is installed for non-independent control of I and Q reference voltages. R1a gives independent control of reference voltages. 2. Components with * following the reference designator should not be populated on the evaluation board.
Board Size 2.0" x 2.0" Board Thickness 0.028”, Board Material FR-4
RF2484 Cellular CDMA Spectra at Various Output Levels (ACPR @ 885kHz, Vcc = 5.0V, Vref = 4.1V, T = 25°C) -100 -90 -80 -70 -60 -50 -40 -30 -20 Frequency (MHz) Power (dBm) CP = -10.6 dBm; ACPR = -70 dBc CP = -12.0 dBm; ACPR = -72 dBc CP = -14.7 dBm; ACPR = -73 dBc CP = -9.5 dBm; ACPR = -68 dBc Note: Below ~-90dBm, test setup noise inhibits accurate ACP measurement. RF2484 PCS CDMA Spectra at Various Output Levels (ACPR @ 885 kHz, Vcc = 5.0V, Vref = 4.1V, T = 25°C) -100 -90 -80 -70 -60 -50 -40 -30 -20 Frequency (MHz) Power (dBm) CP = -12.9 dBm; ACPR = -72 dBc CP = -14.3 dBm; ACPR = -73 dBc CP = -11.1 dBm; ACPR = -71 dBc RF2484 Output Power versus I, Q Input Voltage Level (Vcc = 5.0V, Vref = 4.1V, T = 25°C, Single Sideband) -20 -15 -10 0 200 400 600 800 1000 1200 1400 1600 I, Q Input Voltage Level (mVp) SSB Output Power (dBm)
880 MHz
1960 MHz
2140 MHz
RF2484 Output Channel Power vs I, Q Input Voltage Level (Vcc = 5.0V, Vref = 4.1V, T = 25°C, CDMA/W-CDMA Mod.) -30 -25 -20 -15 -10 250 500 750 1000 1250 1500 1750 2000 2250 2500 I, Q Input Voltage Level (mVpp) Output Channel Power (dBm)