RF2418_1 RFMD | Alldatasheet
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Technical content
Features
Single 3V to 6.5V Power Sup- ply High Dynamic Range Low Current Drain High LO Isolation LNA Power Down Mode for Large Signals
Applications
UHF Digital and Analog Receivers Digital Communication Sys- tems Spread-Spectrum Communi- cation Systems Commercial and Consumer Systems 433MHz and 915MHz ISM Band Receivers General Purpose Frequency Conversion RF2418 Low Current LNA/Mixer RF2418PCBA-41X Fully Assembled Evaluation Board Rev A7 DS060203 RoHS Compliant & Pb-Free Product Package Style: SOIC-14
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Supply Voltage -0.5 to 7 V DC Input LO and RF Levels +6 dBm Ambient Operating Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Parameter Specification Unit ConditionMin. Typ. Max. Overall T=25°C, V CC=5V , RF=850MHz, LO=921MHz RF Frequency Range 400 to 1100 MHz Cascade Power Gain 23 dB High impedance output Cascade IP3 -13 dBm Referenced to the input Cascade Noise Figure 2.4 dB Single sideband, includes image filter with 1.0dB insertion loss First Section (LNA) Noise Figure 1.8 2.0 dB Input VSWR 1.5:1 With external series matching inductor Input IP3 +3.0 +4.0 dBm Gain 13 14 dB Reverse Isolation 40 dB Output VSWR 1.5:1 Second Section (RF Amp, Mixer, IF1) High impedance output Noise Figure 9.5 dB Single Sideband Input VSWR 1.5:1 With external series matching inductor Input IP3 +1 dBm Conversion Power Gain 7 9 dB Output Impedance 4000||10pF Ω Open Collector Second Section (RF Amp, Mixer, IF2) Buffered output, 50Ω load Noise Figure 10 dB Single Sideband Input VSWR 1.5:1 With external series matching inductor Input IP3 -0.5 0 dBm Conversion Gain 5 6 dB Output Impedance 30 Ω Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Parameter Specification Unit ConditionMin. Typ. Max. LO Input LO Frequency 300 to 1200 MHz LO Level -6 to +6 dBm LO to RF Rejection 15 dB LO to IF Rejection 40 dB With pin 5 connected to ground. LO Input VSWR 1.3:1 In order to achieve a low VSWR match at this input, an 82Ω resistor to ground is placed in parallel with this port. Power Supply Voltage 3.0 6.5 V Current Consumption 14 mA V CC=5.0V, LNA On, Mixer On, Buffer Off 12 20 26 mA V CC=5.0V, LNA On, Mixer On, Buffer On 69 2 0 m A V CC=5.0V, LNA Off, Mixer On, Buffer Off
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Pin Function Description Interface Schematic 1L N A I N A series 10nH matching inductor is necessary to achieve specified gain and noise figure at 900MHz. This pin is NOT internally DC-blocked. An external blocking capacitor must be provided if the pin is connected to a device with DC present. A DC path to ground (i.e. an inductor or resistor to ground) is, however, acceptable at this pin. If a blocking capacitor is required, a value of 22pF is recommended. 2G N D Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. 3 VDD1 Supply Voltage for the LNA only. A 22pF external bypass capacitor is required and an additional 0.01μF is required if no other low frequency bypass capacitors are near by. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. For large input signals, VDD1 may be disconnected, resulting in the LNA’s gain changing from +11dB to -26dB and current drain decreasing by 4mA. If the LNA is never required for use, then this pin can be left unconnected or grounded, and Pin 11 is used as the first input. 4 VDD2 Power supply for the IF buffer amplifier. If the high impedance mixer output is being used, then this pin is not connected. 5I F B Y P If this pin is connected to ground, an internal 10pF capacitor is connected in parallel with the mixer output. This capacitor functions as an LO trap, which reduces the amount of LO to IF bleed-through and prevents high LO voltages at the mixer output from degrading the mixer’s dynamic range. At higher IF frequencies, this capacitance, along with parasitic layout capaci- tance, should be parallel resonated out by the choice of the bias inductor value at pin 7. If the internal capacitor is not connected to ground, the buffer amplifier could become unstable. A ~10pF capacitor should be added at the output to maintain the buffer’s stability, but the gain will not be significantly affected. 6I F 2 O U T 50Ω buffered (open source) output port, one of two output options. Pin 7 must have a bias resistor to VDD and pin 6 must have a bias resistor to ground (see Buffered Output Application Schematic) in order to turn the buffer amplifier on. Current drain will increase by approximately 8mA at 5V, and by approximately 5mA at 3V. It is recommended that these bias resistors be less than 1kΩ. 7I F 1 O U T High impedance (open drain) output port, one of two output options. This pin must be connected to VDD through a resistor or inductor in order to bias the mixer, even when using IF2 Output. In addition, a 0.01μF bypass capacitor is required at the other end of the bias resistor or inductor. The ground side of the bypass capacitor should connect immediately to ground plane. This output is intended to drive high impedance IF filters. The rec- ommended matching network is shunt L, series C (see the application schematic, high impedance output). This topology will provide matching, bias, and DC-blocking. 8L O I N Mixer LO input. A high-pass matching network, such as a single shunt inductor (as shown in the application schematics), is the recommended topology because it also rejects IF noise at the mixer input. This filtering is required to achieve the specified noise figures. This pin is NOT internally DC-blocked. An external blocking capacitor must be provided if the pin is connected to a device with DC present. A DC path to ground (i.e. an induc- tor or resistor to ground) is, however, acceptable at this pin. If a blocking capacitor is required, a value of 22pF is recommended. 9R F B Y P Connection for the external bypass capacitor for the mixer RF input preamp. 1000pF is recommended. The trace length between the pin and the capacitor should be minimized. The ground side of the bypass capaci- tor should connect immediately to ground plane. LNA IN IF2 OUT IF1 OUT LO IN
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Package Drawing Pin Function Description Interface Schematic 10 GND Same as pin 2. 11 RF IN Mixer RF Input port. For a 50Ω match at 900MHz use a 15nH series inductor. This pin is NOT internally DC-blocked. An external blocking capac- itor must be provided if the pin is connected to a device with DC present. A DC path to ground (i.e. an inductor or resistor to ground) is, however, acceptable at this pin. If a blocking capacitor is required, a value of 22pF is recommended.To minimize the mixer’s noise figure, it is recommended to have a RF bandpass filter before this input. This will prevent the noise at the image frequency from being converted to the IF. 12 GND Same as pin 2. 13 GND Same as pin 2. 14 LNA OUT 50Ω output. Internally DC-blocked. RF IN LNA OUT 0.156 0.148 0.059 0.057 0.252 0.236 0.010 0.004.018 .014 8° MAX 0° MIN 0.0500 0.0164 0.010 0.007 0.347 0.339 0.050
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Application Schematic High Impedance Output Configuration 850MHz LNA MI XERBUFFER 10pF RF AMP I F F i l t e r H i Z IF O U T RF I N I m a g e F i l t e r Ω 10 nH LO I N V DD V DD L1 and C1 are pi cked t o mat ch t he mi xer' s out put i m pedance (4 k Ω I I 10 pF) t o t he I F f i l t er' s i mpedance, at t he I F f requency. C1 al so serves as a DC bl ock, i n case t he I F f i l t er i s not an open ci rcui t at DC. 100 nF 47 pF100 nF 10 nH 4 pF 1 nF 15 nH
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Application Schematic Buffered Output Configuration 850MHz LNA MI XERBUFFER 10pF RF AMP I F F i l t e r Ω IF O U T R F IN I m a g e F i l t e r Ω 15nH 10 nH LO IN V DD V DD L1 should parallel resonate, at the IF frequency, with the internal 10pF capacitor plus any extra parasitic layout capacitance. R1 and R2 are bias resistors that set the bias current for the buffer amplifier. The value recommended is 510 W , each. Higher values will decrease the current consumption but also decrease the output level at which voltage clipping begins to occur. At lower IF frequencies, where the internal 10 pF capacitor does not roll off the conversion gain, L1 may be eliminated. C1 is a blocking capacitor, in case the IF filter' s input is not an open circuit at DC. 10 nH 47 pF100 nF L1R2 100 nF 100 nF 1 nF 4 pF
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Schematic RF=850MHz, IF=71MHz LNA MIXERBUFFER 10pF RF AMP 10 nH 47 pF 0.1 μF 1 μH 18 nH 1 nFR3 610 Ω 300 Ω E2 E1 10 nH 5.11 kΩ 0.1 μF 3 pF to 5 pF see note Notes: For high impedance output 1) Populate L1 and TP1 2) Remove jumper E1 to E2 50 Ω μstrip 50 Ω μstrip 50 Ω μstrip 2418400C Jumper TP1 see note VDD 50 Ω μstrip NC GND P1-3 VDD LNA IN 50 Ω μstrip IF OUT P1-3 LO IN RF IN LNA OUT
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Layout Board Size 1.52” x 1.52” Board Thickness 0.031”, Board Material FR-4
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. High Impedance Mixer Gain versus Voltage, RF=850MHz 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Voltage (V) Gain (dB) T =-40 T = 26 T = 85 High Impedance Casc. Gain versus Voltage, RF=850MHz 14.0 16.0 18.0 20.0 22.0 24.0 26.0 Voltage (V) Gain (dB) T =-40 T =26 T = 85 High Impedance Mixer Input IP3 versus Voltage, RF=850MHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Voltage (V) IIP3 (dBm) T =-40 T = 26 T = 85 High Impedance Casc. Input IP3 versus Voltage, RF=850MHz -15.0 -14.5 -14.0 -13.5 -13.0 -12.5 -12.0 -11.5 -11.0 -10.5 -10.0 Voltage (V) IIP3 (dBm) T =-40 T =26 T = 85 Buffered LNA Gain versus Voltage, RF=850MHz 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 Voltage (V) Gain (dB) T =-40 T = 26 T =85 Buffered Mixer Gain versus Voltage, RF=850MHz 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 Voltage (V) Gain (dB) T =-40 T = 26 T = 85
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Buffered Casc. Gain versus Voltage, RF=850MHz 5.0 10.0 15.0 20.0 25.0 30.0 Voltage (V) Gain (dB) T =-40 T =26 T = 85 Buffered LNA Input versus Voltage, RF=850MHz -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 Voltage (V) IIP3 (dBm) T =-40 T = 26 T =85 Buffered Mixer Input IP3 versus Voltage, RF=850MHz -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 Voltage (V) IIP3 (dBm) T =-40 T = 26 T = 85 Buffered Casc. Input IP3 versus Voltage, RF=850MHz -16.0 -15.0 -14.0 -13.0 -12.0 -11.0 -10.0 Voltage (V) IIP3 (dBm) T =-40 T =26 T = 85 Buffered LNA Noise Figure versus Voltage, RF=850MHz Part to Part Variation 1.4 1.6 1.8 2.0 Voltage (V) Gain (dB) Part 1 Part 2 Part 3 Part 4 Part 5 Buffered Mixer Noise Figure versus Voltage, RF=850MHz Part to Part Variation 9.0 9.5 10.0 10.5 11.0 Voltage (V) Gain (dB) Part 1 Part 2 Part 3 Part 4 Part 5
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.