RF2312_06 RFMD | Alldatasheet

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RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Optimum Technology Matching® Applied Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS 4GND 3GND 2GND 1RF IN 8 RF OUT

7 GND

6 GND

5 GND

LINEAR GENERAL PURPOSE AMPLIFIER

  • CATV Distribution Amplifiers
  • Cable Modems
  • Broadband Gain Blocks
  • Laser Diode Driver
  • Return Channel Amplifier
  • Base Stations The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hete rojunction Bipolar Tran- sistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatness of better than 0.5dB from 5MHz to 1000MHz, and the high linearity, make this part idea l for cable TV applications. Other applications include IF and RF amplification in wireless voice and data communication products operat- ing in frequency bands up to 2500MHz. The device is self-contained with 75 Ω input and output impedances, and requires only two external DC biasing elements to operate as specified.
  • DC to well over 2500MHz Operation
  • Internally Matched Input and Output
  • 15dB Small Signal Gain
  • 3.8dB Noise Figure
  • +20dBm Output Power
  • Single 5V to 12V Positive Power Supply RF2312 Linear General Purpose Amplifier RF2312 PCBA Fully Assembled Evaluation Board - 75 Ω RF2312 PCBA Fully Assembled Evaluation Board - 50 Ω Rev C6 051025 0.248 0.232 0.200 0.192 0.160 0.152 0.018 0.014 0.050 0.059 0.057 0.010 0.004 -A- 0.0100 0.0076 0.0500 0.0164 8° MAX 0° MIN NOTES: 1. Shaded lead is pin 1. 2. All dimensions are excluding flash, protrusions or burrs. 3. Lead coplanarity: 0.005 with respect to datum "A". 4. Package surface finish: Matte (Charmilles #24~27). Package Style: SOIC-8 RoHS Compliant & Pb-Free Product

Output Load VSWR 20:1 Ambient Operating Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Parameter Specification Unit ConditionMin. Typ. Max. Overall (50Ω) T=25°C, V CC=9V , Freq=900MHz, RC=30 Ω, 50Ω System, PIN=-4dBm Frequency Range DC to 2500 MHz 3dB Bandwidth Gain 14.5 15.1 dB Noise Figure 3.8 4.3 dB From 50MHz to 300MHz, -30 to +70 °C 4.2 4.8 dB From 300MHz to 1000MHz, -30 to +70 °C Input VSWR 1.7:1 2:1 Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operat- ing frequency range. Output VSWR 1.4:1 2:1 Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operat- ing frequency range. Output IP 3 +40 +42 dBm At 100MHz Output IP3 +33 +36 dBm At 500MHz Output IP3 +30 +33 dBm At 900MHz Output P1dB +21 +22 dBm At 100MHz Output P1dB +20 +21 dBm At 500MHz Output P1dB +17 +18.5 dBm At 900MHz Saturated Output Power +23 dBm At 100MHz Saturated Output Power +22.5 dBm At 500MHz Saturated Output Power +20.5 dBm At 900MHz Reverse Isolation 20 dB Thermal ThetaJC 114.9 °C/W I CC=100mA, P DISS =0.555W, TAMB=85°C, TJ=149°C No RF Input/Output Mean Time To Failure 2170 years T AMB=+85°C ThetaJC 114.05 °C/W I CC=120mA, P DISS =0.702W, TAMB=85°C, TJ=165°C No RF Input/Output Mean Time To Failure 2170 years T AMB=+85°C Power Supply Device Voltage (VD) 5.5 V On pin 8, I CC=100mA

5.0 V On pin 8, I CC=40mA

Operating Current Range 40 100 120 mA V CC=9.0V , RC=30 Ω Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).

Parameter Specification Unit ConditionMin. Typ. Max. Overall (75Ω) T=25°C, V CC=9V , Freq=900MHz, RC=30 Ω, 75Ω System Frequency Range DC to 2500 MHz 3dB Bandwidth Gain 14.5 16 dB Noise Figure 3.8 4.3 dB From 50MHz to 300MHz, -30°C to +70°C. 4.2 4.8 dB From 300MHz to 1000MHz, -30°C to +70°C. Input VSWR 1.3:1 2:1 From 50MHz to 900MHz, -30°C to +70°C. Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operat- ing frequency range. Output VSWR 1.2:1 1.75:1 From 50MHz to 300MHz, -30°C to +70°C. Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operat- ing frequency range. 1.4:1 2:1 From 300MHz to 500MHz, -30°C to +70°C. 1.5:1 2:1 From 500MHz to 900MHz, -30°C to +70°C. Output IP 3 +36 +38 dBm At 100MHz Output IP3 +33 +36 dBm At 500MHz Output IP3 +28 +30 dBm At 900MHz Output P1dB +21 +22 dBm At 100MHz Output P1dB +20 +21 dBm At 500MHz Output P1dB +17 +18.5 dBm At 900MHz Saturated Output Power +23 dBm At 100MHz Saturated Output Power +22.5 dBm At 500MHz Saturated Output Power +20.5 dBm At 900MHz Reverse Isolation 20 dB

77 Channels 77 Channels to 550MHz at 10dBmV,

33 channels to 760MHz at 0dBmV flat at DUT input CSO >86 dBc 61.25MHz >86 dBc 83.25MHz 76 dBc 193.25MHz 72 dBc 313.2625MHz 64 dBc 547.25MHz CTB >86 dBc 61.25MHz >86 dBc 83.25MHz 86 dBc 193.25MHz 84 dBc 313.2625MHz 83 dBc 547.25MHz CNR 65 66 dB

110 Channels 110 Channels, 10dBmV/channel at input

CSO >86 dBc 61.25MHz >86 dBc 83.25MHz 76 dBc 193.25MHz 70 dBc 313.2625MHz 64 dBc 547.25MHz CTB 84 dBc 61.25MHz 86 dBc 83.25MHz 85 dBc 193.25MHz 81 dBc 313.2625MHz 80 dBc 547.25MHz Cross Modulation 77 dBc 61.25MHz 74 dBc 445.25MHz CNR 65 66 dB

Parameter Specification Unit ConditionMin. Typ. Max. Overall (75Ω Push-Pull) T=25°C, V CC=9V or 24V, 75 Ω System, RFIN=-10dBm Frequency Range DC to 150 MHz Gain 15 dB Noise Figure 5.0 dB From 5MHz to 150MHz, -30°C to +70°C. Input VSWR 1.1:1 Output VSWR 1.2:1 Output IP 2 +71 dBm At 10MHz +72 dBm At 30MHz +74 dBm At 50MHz Output IP3 +40 dBm At 10MHz +40 dBm At 30MHz +40 dBm At 50MHz Second Harmonic -73 dBc At 10MHz -65 dBc At 30MHz -65 dBc At 50MHz

Pin Function Description Interface Schematic 1R F I N RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in all applications. The device has internal feedback, and not using a DC- blocking capacitor will disable the temperature compensation.The bias of the device can be controlled by this pin. Adding an optional 1kΩ resistor to ground on this pin reduces the bias level, which may be com- pensated for by a higher supply voltage to maintain the appropriate bias level. The net effect of this is an increased output power capability, as well as higher linearity for signals with high crest factors. DC-cou- pling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. 2G N D Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Each ground pin should have a via to the ground plane. 3G N D Same as pin 2. 4G N D Same as pin 2. 5G N D Same as pin 2. 6G N D Same as pin 2. 7G N D Same as pin 2. 8R F O U T RF output and bias pin. Because DC is present on this pin, a DC-block- ing capacitor, suitable for the frequency of operation, should be used in most applications. For biasing, an RF choke in series with a resistor is needed. The value for the resistor R C is 30Ω (0.5W) for VCC=9V and 21Ω for VCC=8V. The DC voltage on this pin is typically 6.0V with a current of 100mA. In lower power applications the value of RC can be increased to lower the current and VD on this pin. RF OUT RF IN

5MHz to 50MHz Reverse Path Application Schematic 10dB Gain RF OUTRF IN VCC NOTE 1: Optional resistor RS can be used to maintain the correct bias level at higher supply voltages. This is used to increase output capability or linearity for signals with high crest factors. 10 nF 10 nF 10 μH 30 Ω 100 nF 100 nF RS 1 - 2 kΩ RF OUTRF IN R5 is used to maintain the correct bias level at higher supply voltages and is also required in this configuration. The RC network of R2 and C3 should be kept physically as short as possible. R2 can be adjusted as required to improve the impedance matching. R6 and R7 reduce the typical gain by increasing the emitter resistance. L1 should be at least 200 Ω reactive at the lowest operating frequency. C1 and C2 should be less than 10 Ω at the lowest operating frequency. C4 and C5 improve gain flatness. VCC= 9 - 12 V 220 pF 1 - 2 kΩ 10 nF R2 470 Ω 7.5 Ω 7.5 Ω 220 pF 330 nH R1 = 21 - 30 Ω TBD TBD

Push-Pull Standard Voltage RF2312 RF2312 616PT- 1030F EDGE 120 Ω120 Ω120 Ω 120 Ω 0.1 uF V 616PT-

1030 F EDGE

V

2400 Ω 0.1 uF 10 nF616PT- 1030 10 nF F EDGE 2400 Ω 10 uH 10 nF 616PT- 120 Ω 120 Ω120 Ω 120 Ω 10 uH 120 Ω 120 Ω120 Ω 120 Ω 0.1 uF CON3 GND 47 nF 63 nF

Evaluation Board Schematic - 50Ω (Download Bill of Materials from www.rfmd.com.) Evaluation Board Schematic - 75Ω NOTE: For 5V applications, R1 to R4 may be removed (shorted). This will result in degraded distortion performance. 220 pFmicrostripJ1 SMA 220 pF microstrip SMA 330 nH 120 Ω 100 nF 100 nF OUT 120 Ω 120 Ω 120 Ω P1-1 2312400A P1 H3M P1-1 VCC (9 V) GND NC 1 nFmicrostripJ1 F CONN (75 Ω) C3 1 nF microstrip J2 F CONN (75 Ω) 1000 nH 120 Ω 0.1 uF OUT 120 Ω 120 Ω 120 Ω P1-1 2312401- CON3 GND NC P1-1 VCC

Evaluation Board Layout - 50Ω 2.02” x 2.02” Board Thickness 0.031”, Board Material FR-4

Evaluation Board Layout - 75Ω Standard Voltage 1.40” x 1.40” Board Thickness 0.062”, Board Material FR-4

Evaluation Board Layout - 75Ω Push-Pull, Standard Voltage 1.70” x 1.50” Board Thickness 0.062”, Board Material FR-4

Evaluation Board Layout - 75Ω Push-Pull, 24V 1.70” x 1.50” Board Thickness 0.062”, Board Material FR-4

500 MHz

0.0 5.0 10.0 15.0 20.0 PIN (dBm) POUT (dBm) Output Third Order Intercept Point (OIP3) versus PIN 0.0 10.0 20.0 30.0 40.0 50.0 PIN (dBm) Output IP3 (dBm) Output P1dB versus Frequency 0.0 5.0 10.0 15.0 20.0 25.0 Frequency (MHz) Output P1dB (dBm) Vcc=5.0V, Rc=22 Vcc=6.0V, Rc=22 Vcc=7.0V, Rc=22 Vcc=8.0V, Rc=22 Vcc=9.0V, Rc=30 Vcc=11.0V, Rc=30, Rs=1k IM3 Products versus POUT 500/501 MHz 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 POUT (dBc) IM3 Products (-dBc) ICC versus Device Voltage (Pin 8) 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 Device Voltage (V) ICC (mA) Rs=1k No Rs

START .300 000 MHz STOP 3 000.000 000 MHz 4_: 53.809 -24.182 3.464 pF 1 900.000 000 MHz 1_: 97.188 -1.5742

50 MHz

2_: 93.512 -13.215

450 MHz

3_: 84.16 -22.945

900 MHz

CH1 S 21 log MAG 10 dB/ REF 0 dB START .300 000 MHz STOP 3 000.000 000 MHz 1 2 3 4_: 14.454 dB 1 900.000 000 MHz 1_: 15.372 dB 2_: 15.307 dB 3_: 15.184 dB START .300 000 MHz STOP 3 000.000 000 MHz 4_: 19.802 -16.739 5.0042 pF 1 900.000 000 MHz 1_: 115.2 -6.6211 2_: 87.551 -42.652 3_: 52.43 -44.855 CH1 S 12 log MAG 10 dB/ REF 0 dB START .300 000 MHz STOP 3 000.000 000 MHz 1 2 3 4_:-17.966 dB 1 900.000 000 MHz 1_:-19.908 dB 2_:-19.87 dB 3_:-19.554 dB

1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8

75 Ohms, ICC = 110 mA, Temp = 25°C

2.001GHz Swp Min 0.001GHz S[2,2] S[1,1] 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8

75 Ohms, ICC = 100 mA, Temp = 25°C

2.001GHz Swp Min 0.001GHz S[2,2] S[1,1]