RF2310

RF2310 RFMD | Alldatasheet

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Functional Block Diagram RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA T el (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Optimum Technology Matching® Applied Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS SiGe HBT Si CMOS VCC GND GND RF IN RF OUT GND GND GND RF2310 WIDEBAND GENERAL PURPOSE AMPLIFIER

• General Purpose High Bandwidth Gain Blocks  IF or RF Buffer Amplifiers  Broadband Test Equipment  Final PA for Medium Power Applications  Driver Stage for Power Amplifiers The RF2310 is a general purpose, low-cost, high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran- sistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 2500MHz. The gain flatness over a very wide band- width makes the device suitable for many applications. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified.  DC to well over 2500MHz Operation  Internally Matched Input and Output  15dB Small Signal Gain  5dB Noise Figure  +19dBm Output Power  Single 3.5V to 6V Positive Power Supply RF2310 Wideband General Purpose Amplifier RF2310 PCBA Fully Assembled Evaluation Board Rev C5 010717 0.244 0.229 0.157 0.150 0.018 0.014 0.050 0.068 0.053 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity - 0.005 with respect to datum "A". Dimensions in mm 0.196 0.189 0.008 0.004 -A- 8° MAX 0° MIN 0.034 0.016 0.009 0.007 Package Style: SOIC-8

Supply Voltage -0.5 to +6.0 V DC Input RF Power +10 dBm Storage Temperature -40 to +150 °C Junction Temperature 175 °C Thermal Resistance, Junction to Case 179 °C/W Notes: case reference: pins 5-7, conditions: no signal in and both RF ports terminated in 50Ω ; average junction temperature measured at 85°C ambient: 143°C Parameter Specification Unit ConditionMin. Typ. Max. Operating Range Overall Frequency Range 100 2500 MHz Supply Voltage 3.5 6.0 V Operating Current (ICC )2 0 2 5 m A V CC =3.6V , T emp=27°C 40 50 65 mA V CC =5V , T emp=27°C Operating Ambient Temperature -40 +85 °C 3.6V Performance Gain 16.2 dB Freq=300MHz, V CC =3.6V , T emp=27°C Gain 15.3 dB Freq=900MHz, V CC =3.6V , T emp=27°C Noise Figure 2.5 dB Output IP3 +22.0 dBm OP1dB +10 dBm Gain 15 dB Freq=1950MHz, V CC =3.6V , T emp=27°C Noise Figure 2.7 dB Output IP3 +23.0 dBm OP1dB +10 dBm Gain 16 dB Freq=2450MHz, V CC =3.6V , T emp=27°C Noise Figure 2.4 dB Output IP3 +21.0 dBm OP1dB +10 dBm 5V Performance Gain 17 dB Freq=300MHz, V CC =5V , T emp=27°C Gain 14.0 16.5 dB Freq=900MHz, V CC =5V , T emp=27°C Noise Figure 3 dB Output IP3 +28.0 +31.0 dBm OP1dB +17 dBm Gain 15.6 dB Freq=1950MHz, V CC =5V , T emp=27°C Noise Figure 3.5 dB Output IP3 +33.0 dBm OP1dB +18 dBm Gain 15 dB Freq=2450MHz, V CC =5V , T emp=27°C Noise Figure 2.8 dB Output IP3 +26.0 dBm OP1dB +17 dBm Caution!ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).

Pin Function Description Interface Schematic 1V C C Power supply pin. An external bypass capacitor is recommended. The total supply current is shared between this pin and pin 8 (through the inductor). 2G N D Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. To achieve the performance as specified, and to minimize instability, it is recommended to have a local ground plane under the device, as shown in the evaluation board layout. 3G N D Same as pin 2. 4R F I N RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC-coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instabil- ity. 5G N D Same as pin 2. 6G N D Same as pin 2. 7G N D Same as pin 2. 8R F O U T RF output and bias pin. Biasing is accomplished with an external choke inductor to V CC that provides high impedance at the operating fre- quency. Because DC is present on this pin, a DC-blocking capacitor, suitable for the frequency of operation, should be used in most applica- tions. The supply side of the bias network should also be well bypassed. VCC RF IN Bias RF OUT RF IN VCC =5 V 22 pF 22 pF 100 nH RF OUT 22 pF100 nF

Evaluation Board Schematic (Download Bill of Materialsfrom www.rfmd.com.) P1-3 VCC P1-1 VCC 2310400A 330 pF 50 Ωµ strip INJ1 SMA 1n F 1n F 100 pF 50 Ωµ strip SMA OUT 200 nH 330 pF 1 µF P1 H3M P1-1 PC GND P1-3 VCC

Board Size 2.02” x 2.02” Board Thickness 0.031”, Board Material FR-4

S-Parameter Conditions: All plots are taken at ambient temperature=25°C. NOTE: All S11 and S22 plots shown were taken from an RF2310 evaluation board with external input and output tuning compo- nents removed and the reference points at the RF IN and RF OUT pins. 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S11 Vcc=3V Swp Max 3.005GHz Swp Min 0.01GHz S11 VCC =3 V

2.5 GHz

1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S11 Vcc=5V Swp Max 3.005GHz Swp Min 0.01GHz S11 VCC =5 V 1G H z

100 MHz

1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S22 Vcc=3V Swp Max 3.005GHz Swp Min 0.01GHz S22 VCC =3 V 1G H z

1.6 GHz

1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S22 Vcc=5V Swp Max 3.005GHz Swp Min 0.01GHz S22 VCC =5 V 1G H z 2G H z

200 MHz

50 MHz

Frequency = 900 MHz 15.4 15.6 15.8 16.0 16.2 16.4 16.6 16.8 17.0 17.2 Temperature (°C) Gain (dB) Vcc=3V Vcc=5V OIP3 versus Temperature Frequency = 900 MHz 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 Temperature (°C) OIP3 (dBm) Vcc=3V Vcc=5V OP1dB versus Temperature Frequency = 900 MHz 5.0 7.0 9.0 11.0 13.0 15.0 17.0 19.0 Temperature (°C) OP1dB (dBm) Vcc=3V Vcc=5V ICC versus Temperature Frequency = 900 MHz 7.0 17.0 27.0 37.0 47.0 57.0 67.0 Temperature (°C) ICC (mA) Vcc=3V Vcc=5V Gain versus Temperature Frequency = 1950 MHz 14.6 14.8 15.0 15.2 15.4 15.6 15.8 16.0 16.2 Temperature (°C) Gain (dB) Vcc=3V Vcc=5V OIP3 versus Temperature Frequency = 1950 MHz 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 Temperature (°C) OIP3 (dBm) Vcc=3V Vcc=5V

Frequency = 1950 MHz 5.0 7.0 9.0 11.0 13.0 15.0 17.0 19.0 21.0 Temperature (°C) OP1dB (dBm) Vcc=3V Vcc=5V ICC versus Temperature Frequency = 1950 MHz 8.0 18.0 28.0 38.0 48.0 58.0 68.0 Temperature (°C) ICC (mA) Vcc=3V Vcc=5V Gain versus Temperature Frequency = 2450 MHz 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 Temperature (°C) Gain (dB) Vcc=3V Vcc=5V OIP3 versus Temperature Frequency = 2450 MHz 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 Temperature (°C) OIP3 (dBm) Vcc=3V Vcc=5V OP1dB versus Temperature Frequency = 2450 MHz 5.0 7.0 9.0 11.0 13.0 15.0 17.0 19.0 Temperature (°C) OP1dB (dBm) Vcc=3V Vcc=5V ICC versus Temperature Frequency = 2450 MHz 7.0 17.0 27.0 37.0 47.0 57.0 67.0 Temperature (°C) ICC (mA) Vcc=3V Vcc=5V

S11 of Evaluation Board versus Frequency Temperature = +25°C 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Frequency (MHz) Input VSWR Vcc=3V Vcc=5V S22 of Evaluation Board versus Frequency Temperature = +25°C 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Frequency (MHz) Output VSWR Vcc=3.0V Vcc=5.0V Reverse Isolation (S12) of Evaluation Board versus Frequency,Temperature = +25°C -24.0 -23.5 -23.0 -22.5 -22.0 -21.5 -21.0 -20.5 -20.0 -19.5 Frequency (MHz) Reverse Isolation (dB) Vcc=3.0V Vcc=5.0V