RF2301

RF2301 RFMD | Alldatasheet

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Functional Block Diagram RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA T el (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Optimum Technology Matching® Applied Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS /Gfc SiGe HBT Si CMOS GND GND RF IN GND VDD1 VDD2 RF OUT GND RF2301 HIGH ISOLATION BUFFER AMPLIFIER

• Local Oscillator Buffer Amplifiers  FDD and TDD Communication Systems  Commercial and Consumer Systems  Portable Battery-Powered Equipment W i r e l e s sL A N  ISM Band Applications The RF2301 is a high reverse isolation buffer amplifier. The device is manufactured on a low-cost Gallium Ars- enide MESFET process, and has been designed for use as a general purpose buffer in high-end communication systems operating at frequencies from less than 300MHz to higher than 2500MHz. With +5dBm output power, it may also be used as a driver in transmitter applications. T h ed e v i c ei sp a c k a g e di na n8 - l e a dp l a s t i cp a c k a g e .T h e product is self-contained, requiring just a resistor and blocking capacitors to operate. The output power, com- bined with 50dB reverse isolation at 900MHz allows excellent buffering of LO sources to impedance changes. The device can be used in 3V battery applications. The unit has a total gain of 17dB with only 14mA current from a 3V supply.  Single 2.7V to 6.0V Supply  +4dBm Output Power  21dB Small Signal Gain  50dB Reverse Isolation at 900MHz  Low DC Current Consumption of 14mA  300MHz to 2500MHz Operation RF2301 High Isolation Buffer Amplifier RF2301 PCBA Fully Assembled Evaluation Board Rev A8 010717 0.244 0.229 0.157 0.150 0.018 0.014 0.050 0.068 0.053 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity - 0.005 with respect to datum "A". Dimensions in mm 0.196 0.189 0.008 0.004 -A- 8° MAX 0° MIN 0.034 0.016 0.009 0.007 Package Style: SOIC-8

Supply Voltage (VDD ) -0.5 to +6.5 V DC DC Supply Current 60 mA Input RF Power +10 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Parameter Specification Unit ConditionMin. Typ. Max. Overall T=25°C, VDD =5V DC Nominal Frequency Range 300 to 2500 MHz Input IP3 -8 dBm Noise Figure 8 dB Input VSWR <2:1 In a 50 Ω system Output VSWR <2:1 In a 50 Ω system Power Supply Voltage 2.7 to 6.0 V Nominal 5V Configuration Using Broad Band Application Circuit, VDD =5V DC , Freq=2500MHZ, T=25°C Gain 21 24 26 dB P1dB Output Power +4 dBm Supply Current 10 30 40 mA Reverse Isolation 50 dB 900MHz, without RF input 50 dB 900MHz, with RF input, saturated 40 dB 2500MHz, without RF input 40 dB 2500MHz, with RF input, saturated Nominal 3V Configuration Using Broad Band Application Circuit, VDD =3V DC , Freq=2500MHZ, T=25°C Gain 15 17 dB P1dB Output Power 0 dBm Supply Current 14 mA Reverse Isolation 50 dB 900MHz, without RF input 50 dB 900MHz, with RF input, saturated 40 dB 2500MHz, without RF input 40 dB 2500MHz, with RF input, saturated Caution!ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).

Pin Function Description Interface Schematic 1G N D Low inductance ground connections. Use individual vias to backside ground plane, placed within 0.030" of pin landing for optimum perfor- mance. 2G N D Same as pin 1. 3R F I N DC-coupled RF input. A broadband impedance match is produced by internal shunt resistive feedback. The DC level is 0V. If a DC voltage is present from connected circuitry, an external DC-blocking capacitor is required for the proper DC operating point. 4G N D Same as pin 1. 5G N D Same as pin 1. 6R F O U T Open drain RF output. A broadband impedance match is produced by an external 100Ω resistor to power supply as shown in Application Schematic 1. Approximately 3dB improvement in gain and output power can be obtained over at least a 20% bandwidth by replacing the resistor to power supply with an external chip inductor network as shown in Application Schematic 2. An external DC-blocking capacitor is required if the following circuitry is not DC-blocked. 7V D D 2 Power supply connections. Bypass with external chip capacitor and individual via to backside ground plane. 8V D D 1 Power supply connections. Bypass with external chip capacitor and individual via to backside ground plane. RF IN RF OUT VDD1 VDD2

100 Ω 1n F VDD 100 pF RF IN L1 100 pF RF OUT 100 pF VDD FREQUENCY

900 MHz

2500 MHz

---- 22 nH 2.7 nH

Evaluation Board Schematic (Download Bill of Materialsfrom www.rfmd.com.) Evaluation Board Layout 1.43” x 1.43” Board Thickness 0.031”; Board Material FR-4 100 pF P1-1 See Chart 2301400A P1-1 VDD GND FREQUENCY BAND COMPONENT BROADBAND (default config.)

2450 MHz

100 Ω 0 Ω 0 Ω N/A N/A N/A 18 nH 22 nH 2.7 nH ABC 50 Ωµ stripJ1 RF IN A B 100 pF 50 Ωµ strip J2 RF OUT 1n F 100 pF C

Broadband Application Circuit -60 -50 -40 -30 -20 -10 33 . 544 . 55 Vdd (V) dB dBm, mA Gain P1dB Idd Reverse Isolation -50 -40 -30 -20 -10 0 500 1000 1500 2000 2500 3000 Frequency (MHz) dB Gain Reverse IsolationReverse Isolation Frequency (MHz) 1500 2000 2500 300010005000 Gain -50 -40 -30 -20 -10 dB

S-Parameter Conditions: All plots are taken at ambient temperature=25°C. NOTE: All S11 and S22 plots shown were taken from an RF2301 evaluation board with external input and output tuning compo- nents removed and the reference points at the RF IN and RF OUT pins. 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S11 Vcc=3V Swp Max 6GHz Swp Min 0.01GHz S11, VCC =3 V 5G H z

600 MHz

100 MHz

1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S11 Vcc=5V Swp Max 6GHz Swp Min 0.01GHz S11, VCC =5 V 5G H z 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S22 Vcc=3V Swp Max 6GHz Swp Min 0.01GHz S22, VCC =3 V

5.5 GHz

4.5 GHz 3G H z

500 MHz

1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S22 Vcc=5V Swp Max 6GHz Swp Min 0.01GHz S22, VCC =5 V 5G H z

4.5 GHz

3.7 GHz

2.5 GHz

1.5 GHz

Freq = 900 MHz 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 Temperature (°C) Gain (dB) Vcc=3V Vcc=5V IIP3 versus Temperature Freq = 900 MHz -8.0 -7.5 -7.0 -6.5 -6.0 -5.5 -5.0 Temperature (°C) IIP3 (dBm) Vcc=3V Vcc=5V OP1dB versus Temperature Freq = 900 MHz -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 Temperature (°C) OP1dB (dBm) Vcc=3V Vcc=5V ICC versus Temperature Freq = 900 MHz 21.0 22.0 23.0 24.0 25.0 26.0 27.0 Temperature (°C) ICC (mA) Vcc=3V Vcc=5V

Freq = 1950 MHz 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 Temperature (°C) Gain (dB) Vcc=3V Vcc=5V IIP3 versus Temperature Freq = 1950 MHz -8.0 -7.5 -7.0 -6.5 -6.0 -5.5 -5.0 Temperature (°C) IIP3 (dBm) Vcc=3V Vcc=5V OP1dB versus Temperature Freq = 1950 MHz -1.0 0.0 1.0 2.0 3.0 4.0 5.0 Temperature (°C) OP1dB (dBm) Vcc=3V Vcc=5V ICC versus Temperature Freq = 1950 MHZ 21.0 21.5 22.0 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0 Temperature (°C) ICC (mA) Vcc=3V Vcc=5V

Freq = 2450 MHz 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 Temperature (°C) Gain (dB) Vcc=3V Vcc=5V IIP3 versus Temperature Freq = 2450 MHz -8.5 -8.0 -7.5 -7.0 -6.5 -6.0 -5.5 -5.0 Temperature (°C) IIP3 (dBm) Vcc=3V Vcc=5V OP1dB versus Temperature Freq = 2450 MHz -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Temperature (°C) OP1dB (dBm) Vcc=3V Vcc=5V ICC versus Temperature Freq = 2450 MHz 21.0 22.0 23.0 24.0 25.0 26.0 27.0 Temperature (°C) ICC (mA) Vcc=3V Vcc=5V S22 of Evaluation Board versus Frequency Temperature = +25°C 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 Frequency (MHz) Output VSWR Vcc=3.0V Vcc=5.0V S11 of Evaluation Board versus Frequency Temperature = +25°C 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 Frequency (MHz) Input VSWR Vcc=3V Vcc=5V