RF2172

RF2172 RFMD | Alldatasheet

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Functional Block Diagram RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA T el (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Optimum Technology Matching® Applied Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS SiGe HBT Si CMOS

12 RF OUT

11 RF OUT

4 Bias

ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL

• BluetoothTM PA  2.4GHz to 2.5GHz ISM Band Systems  902MHz to 928MHz ISM Band Systems  3.6V Spread-Spectrum Cordless Phones  Portable Battery-Powered Equipment  Spread-Spectrum Systems The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manu- factured on an advanced Gallium Arsenide Heterojunc- tion Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth applications and frequency hopping/direct sequence spread-spectrum cordless telephones or other applications in the 902MHz to 928MHz ISM band. The device is packaged in a compact 4mmx4mm LCC. The device features analog gain control to optimize transmit power while maximizing battery life in portable equipment requiring up to 100mW transmit power at the antenna port. BLUETOOTH is a trademark owned by the Bluetooth SIG, Inc., and licensed to RF Micro Devices, Inc.  23.5dBm Typical Output Power  0dB to 28dB Variable Gain  45% Efficiency at Max Output  On-Board Power Down Mode  2.4GHz to 2.5GHz Operation  902MHz to 928MHz Operation RF2172 ISM Band 3.6V, 250mW Amp with Analog Gain Con- trol RF2172 PCBA-H Fully Assembled Evaluation Board 2.4to2.5GHz RF2172 PCBA-L Fully Assembled Evaluation Board 902to928MHz Rev A9 010823 3.75 3.75 + 1.50 SQ 4.00 4.00 0.45 0.28 3.20 1.60 0.75 0.50 12° INDEX AREA3 1.00 0.90 0.75 0.650.05 0.00 NOTES: 5 Package Warpage: 0.05 max. 4 Pins 1 and 9 are fused. Shaded Pin is Lead 1.1 Dimension applies to plated terminal and is measured 0.10 mm and 0.25 mm from terminal tip.2 The terminal #1 identifier and terminal numbering conv shall conform to JESD 95-1 SPP-012. Details of termin identifier are optional, but must be located within the z indicated. The identifier may be either a mold or marke feature. 0.80 TYP 2 1 Dimensions in mm. Package Style: LCC, 16-Pin, 4x4

Caution!ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Absolute Maximum Ratings Parameter Rating Unit Supply Voltage (RF off) -0.5 to +6.0 V DC APC Current (Maximum) +10 mA Control Voltage (VPD ) -0.5 to +6.0 V DC Input RF Power +10 dBm Operating Case Temperature -40 to +85 °C Storage Temperature -55 to +155 °C Parameter Specification Unit ConditionMin. Typ. Max. Overall T=25°C, VCC =3.6V , VPD =3.6V , VAPC =2.5V Usable Frequency Range 500 to 2500 MHz Input Impedance 50 Ω Input VSWR 1.8:1 Without Input Match Output Load VSWR <10:1 0< VAPC <3.0V <6:1 0< VAPC <3.6V 2.45GHz Operation Freq=2.4GHz to 2.5GHz, PIN=0dBm Operating Frequency 2.4 to 2.5 GHz Maximum Output Power 22 +23.5 24.5 dBm Total Efficiency 45 % Reverse Isolation -25 dB Second Harmonic -45 dBc Third Harmonic -40 dBc All Other Spurious -50 dBc Output Load Impedance 20-j4.5 Present to part Gain Control Voltage 0 to V CC V High Gain +22 dB V APC =3.6V , VCC =3.6V , PIN=0dBm Low Gain -10 dB V APC =0V , VCC =3.6V , PIN=0dBm 902MHz Operation Freq=902MHz to 928MHz, PIN=-3.0dBm Operating Frequency 902 to 928 MHz Maximum Output Power +24 dBm Total Efficiency 58 % Reverse Isolation -35 dB Second Harmonic -40 dBc Third Harmonic -40 dBc All Other Spurious -50 dBc Output Load Impedence 20-j1.6 Ω Present to part Gain Control Voltage 0 to V CC V Gain Control Slope 20 dB/V Gain 0 to 28 dB Power Supply Power Supply Voltage 3.6 V Power Supply Current 145 mA V CC =3.6V , VAPC =3.6V , PIN=-3dBm, V PD =3.6V Idle Current 35 mA V PD =3.6V , VAPC =3.6V , RF PIN <-30dBm Power Down Current 2.8 10 µAV CC =3.6V , VAPC =0V , VPD =0V total ICC I(PD) 4.5 mA V CC =3.6V , VPD =3.6V into PD pin I(PD) 2.25 mA V CC =3.0V , VPD =3.0V into PD pin

Pin Function Description Interface Schematic 1G N D Ground connection. For best performance, keep traces physically short and connect immediately to the ground plane. 2G N D Ground connection for the driver stage. For best performance, keep traces physically short and connect immediately to the ground plane. 3R F I N RF input. This is a 50Ω input. No external matching is needed. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. See pin 15. 4G N D See pin 1. 5G N D See pin 1. 6 VPD Power down pin. When this pin is 0V, the device will be in power down mode, dissipating minimum DC power. This pin also serves as the VCC supply pin for the bias circuitry. VPD should be at the supply voltage when the part is not in power down mode. 7A P C Analog power control. Output power varies as a function of the voltage on this pin. See graph. This pin must be driven through a series resistor with a voltage between 0V and VCC . Series resistor determines dynamic range of power control. See plot “POUT versus Gain Control versus Gain Control Resistor”. 8G N D See pin 1. 9G N D See pin 1. 10 GND See pin 1. 11 RF OUT RF output. An external matching network is required to provide the opti- mum load impedance at this pin. See pin 15. 12 RF OUT RF output and power supply for the output stage. Bias voltage for the output stage is provided through this pin. A shunt cap resonating with the bond wire inductance at 2xf 0 c a na l s ob eu s e da tt h i sp i nt op r o v i d e a second harmonic trap. See pin 15. 13 GND See pin 1. 14 GND See pin 1. 15 VCC Power supply for driver stage and interstage matching. This pin forms the shunt inductance needed for proper tuning of the interstage. Refer to the application schematic for the proper configuration. Note: Position and value of the components are important. 16 GND See pin 1. Pkg Base GND Ground connection for the output stage. This pad should be connected to the groundplane by vias directly under the device. A short path is required to obtain optimum performance, as well as provide a good thermal path to the PCB for maximum heat dissipation. APC Bias Network RF IN 1st Stage GND External Cap VCC Inductor Bond Wire Pin 15 R FO U T 1st Stage 2nd Stage RF IN R FO U T

Application Schematic - 915MHz Application Schematic - 2.45GHz 131415161 98765 22 nF RF IN 3.9 nH RAPC 3kΩ APC 2.7 nH 22 nF 4p F 3.9 nH 4p F R FO U T Bias 22 nF 22 nF 22 nF22 nF VPD VCC VCC 131415161 98765 22 nF RF IN 200Ω VAPC 22 nF 1.5 pF 1.5 nH RF OUT Bias 4p F 22 nF 22 nF22 nF VCC VCC 10Ω 22 nF 5p F5p F 10ΩVCC 0.5 pF

Evaluation Board Schematic - 915MHz (Download Bill of Materialsfrom www.rfmd.com). 131415161 98765 22 nF 3.9 nH 3kΩ VAPC 22 nF 4p F 3.9 nH 4p F Bias 22 nF 22 nF 22 nF 22 nF R1* OPEN VCC2 VCC3 2.7 nH 50Ωµ strip J2 RF OUT VCC1 50Ωµ stripJ1 RF IN CON3 P1-1 VCC2 GND P1-3 VCC3 CON3 P2-1 VAPC GND P2-3 VCC1

Evaluation Board Schematic - 2.45GHz 131415161 98765 200Ω VAPC 22 nF 1.5 pF 1.5 nH Bias C10 4p F 22 nF 22 nF 22 nF 10Ω C11 22 nF 5p F 5p F 10Ω 0.5 pF VCC2 VCC3 VCC1 22 nF RF IN 50Ωµ strip RF OUT 50Ωµ strip CON3 P1-1 VCC2 GND P1-3 VCC3 CON3 P2-1 VAPC GND P2-3 VCC1 2172401-

Evaluation Board Layout - 915MHz Board Size 0.80" x 0.85" Board Thickness 0.031”, Board Material FR-4 Evaluation Board Layout - 2.45GHz Board Size 0.800" x 0.924" Board Thickness 0.031”, Board Material FR-4

VCC =3.6V, VAPC =3.6V, Freq=915MHz -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 PIN (dBm) POUT (dBm) Pout -40 Pout 25 Pout 85 POUT versus PIN VCC =3.0V, VAPC =3.0V, Freq=915MHz -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 PIN (dBm) POUT (dBm) Pout -40 Pout 25 Pout 85 Efficiency versus PIN VCC =3.6V, VAPC =3.6V, Freq=915MHz 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 PIN (dBm) Efficiency (%) Eff (%) -40 Eff (%) 25 Eff (%) 85 ICC versus PIN VCC =3.6V, VAPC =3.6V, Freq=915MHz 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 PIN (dBm) ICC (A) Icc -40 Icc 25 Icc 85 POUT versus VAPC VCC =3.6V, Freq=915MHz, PIN=-3dBm -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 VAPC (V) POUT (dBm) Pout -40 Pout 25 Pout 85 ICC versus VAPC VCC =3.6V, Freq=915MHz, PIN=-3dBm 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 VAPC (V) ICC (A) Icc -40 Icc 25 Icc 85

VCC =3.6V, VPD =3.6V, Freq=915MHz -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 VAPC (V) IAPC (mA) Iapc[mA] -40 Iapc[mA] 25 Iapc[mA] 85 POUT versus Gain Control versus RAPC VCC =3.6V, PIN=-3dBm, Freq=915MHz -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 VAPC (V) POUT (dBm) Rapc (3k) Rapc (3.5k) Rapc (4k) POUT versus PIN versus RAPC VCC =3.6V, VAPC =3.6V, Freq=915MHz -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 PIN (dBm) POUT (dBm) Rapc (3k) Rapc (3.5k) Rapc (4k) POUT versus PIN VCC =V APC =3 . 6 V ,F r e q=2 . 4 5G H z -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 PIN (dBm) POUT (dBm) Pout@-40C Pout@+25C Pout@+85C Efficiency versus PIN VCC =V APC =3 . 6V ,F r e q=2 . 4 5G H z 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 PIN (dBm) Efficiency (%) Eff@-40C Eff@+25C Eff@+85C ICC versus PIN VCC =V APC =3 . 6V ,F r e q=2 . 4 5G H z 0.00 0.05 0.10 0.15 0.20 0.25 PIN (dBm) ICC (A) Icc@-40C Icc@+25C Icc@+85C

VCC =3 . 6V ,F r e q=2 . 4 5G H z ,PIN =0d B m -15.0 -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 VAPC (V) POUT (dBm) Pout@-40C Pout@+25C Pout@+85C POUT versus VAPC VCC =3 . 6V ,F r e q=2 . 4 5G H z ,PIN =0d B m 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 VAPC (V) POUT (dBm) Icc@-40C Icc@+25C Icc@+85C f0,2 f0 over Frequency VCC =VAPC =3 . 6V ,PIN=0d B m -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 10.0 20.0 30.0 Frequency (MHz) f0 (dBm) -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 2f0 (dBc) f0@ -40C f0@ +25C f0@ +85C 2f0@-40C 2f0@+25C 2f0@+85C POUT versus PIN VCC -V APC =3 . 0V ,F r e q=2 . 4 5G H z -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 PIN (dBm) POUT (dBm) Pout@-40C Pout@+25C Pout@+85C ICC versus PIN VCC =V APC =3 . 0V ,F r e q=2 . 4 5G H z 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 PIN (dBm) ICC (A) Icc@-40C Icc@+25C Icc@+85C Efficiency versus PIN VCC =V APC =3 . 0V ,F r e q=2 . 4 5G H z 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 PIN (dBm) Efficiency (%) Eff@-40C Eff@+25C Eff@+85C

VCC =3 . 0V ,F r e q=2 . 4 5G H z ,PIN =0d B m -15.0 -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 VAPC (V) POUT (dBm) Pout@-40C Pout@+25C Pout@+85C ICC versus VAPC VCC =3 . 0V ,F r e q=2 . 4 5G H z ,PIN =0d B m 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 VAPC (V) ICC (A) Icc@-40C Icc@+25C Icc@+85C POUT versus PIN over R2 VCC =V APC = 3.6 V, Freq = 2450 MHz -10.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 PIN (dBm) POUT (dBm) Pout(100) Pout(200) Pout(300) Pout(400) ICC versus PIN over R2 VCC =V APC =3 . 6V ,F r e q=2 4 5 0M H z 0.00 0.05 0.10 0.15 0.20 0.25 PIN (dBm) ICC (A) Icc(100) Icc(200) Icc(300) Icc(400) Efficiency versus PIN over R2 VCC =V APC =3 . 6V ,F r e q=2 4 5 0M H z 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 PIN (dBm) Efficiency (%) Eff(100) Eff(200) Eff(300) Eff(400) IAPC versus VAPC over R2 VCC =3 . 6V ,PIN = 0 dBm, Freq = 2450 MHz -0.004 -0.002 0.000 0.002 0.004 0.006 0.008 0.010 0.012 VAPC (V) IAPC (A) Iapc(100) Iapc(200) Iapc(300) Iapc(400)