RF2163_06 RFMD | Alldatasheet

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RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Optimum Technology Matching® Applied Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS 4PWR SEN 3BIAS GND2 2RF IN

1 GND

12 RF OUT

11 RF OUT

10 RF OUT

3V, 2.5GHz LINEAR POWER AMPLIFIER

  • 2.5GHz ISM Band Applications
  • PCS Communication Systems
  • Wireless LAN Systems
  • Commercial and Consumer Systems
  • Portable Battery Powered Equipment
  • Broadband Spread-Spectrum Systems The RF2163 is a linear, medium power, high efficiency amplifier IC designed specif ically for low voltage opera- tion. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro- cess, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum transmitters. The device is provided in a 16-pi n leadless chip carrier with a backside ground and is self-contained with the exception of the output matching network and power supply feed line.
  • Single 3.3V Power Supply
  • +30dBm Saturated Output Power
  • 19dB Small Signal Gain
  • High Power Added Efficiency
  • Patent Pending Power Sense Technology
  • 1800MHz to 2500MHz Frequency Range RF2163 3V, 2.5GHz Linear Power Amplifier RF2163 PCBA Fully Assembled Evaluation Board Rev A6 060301 12° MAX 0.05 0.00 0.75 0.65 1.00 0.90 C 0.05 Dimensions in mm. Shaded pin is lead 1. A 4.00 2.00 1.50 SQ. 4.00 2.00 1.60

2 PLCS

0.10 C A

0.10 C ABM

3.20 0.75 0.50

0.10 C B

2 PLCS-B-

0.80 TYP 0.45 0.28 3.75 3.75 Package Style: QFN, 16-Pin, 4x4 RoHS Compliant & Pb-Free Product

Supply Voltage -0.5 to +6.0 V DC Power Control Voltage (VREG) -0.5 to 3.3 V DC Supply Current 1000 mA Input RF Power +15 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Moisture sensitivity JEDEC Level 3 Parameter Specification Unit ConditionMin. Typ. Max. Overall T=25° C, VCC=3.5V, VREG1=VREG2=2.3V , Freq=2450MHz Frequency Range 1800 to 2500 MHz Maximum Saturated Output Power +29 +30 +32 dBm P IN=+13dBm Efficiency at Max Output Power 26 % Maximum Linear Output Power 25 dBm With 802.11 modulation (11Mbit/s) and meeting 802.11 spectral mask. Linear Efficiency 25 % Small Signal Gain 16 19 dB P IN=10dBm Reverse Isolation 30 dB In “ON” state 30 dB In “OFF” state Second Harmonic -35 dBc Including second harmonic trap, see applica- tion circuit Adjacent Channel Power -35 -32 dBc P OUT=24dBm Alternate Channel Power -52 -50 dBc P OUT=24dBm Isolation TBD dBm In “OFF” state, P IN=TBD Input Impedance 50 Ω With external matching Input VSWR 2:1 With external matching Power Down VREG “ON” 2.3 V Voltage supplied to control input; device is “ON” VREG “OFF” 0 0.5 V Voltage supplied to control input; device is “OFF” Power Supply Operating Voltage 3.0 to 5.0 V Current Consumption 650 mA Power Down “ON”, at max output power 350 mA Power Down “ON”, P OUT=25dBm 150 290 mA Idle current Caution! ESD sensitive device. Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).

Pin Function Description Interface Schematic 1G N D Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. 2R F I N RF input. This input is AC coupled, so an external blocking capacitor is not required if this pin is connected to a DC path. 3 BIAS GND2 Ground for second stage bias circuit. For best performance, keep traces physically short and connect immediately to ground plane. See pin 16.

4 PWR SEN The PWR SEN and PWR REF pins can be used in conjunction with an

external feedback path to provide an RF power control function for the RF2163. The power control function is based on sampling the RF drive to the final stage of the RF2163. 5 PWR REF Same as pin 4. See pin 4. 6V R E G 1 This pin requires a regulated supply to maintain the correct bias cur- rent. See pin 16. 7V R E G 2 Same as pin 6. See pin 16. 8 BIAS GND1 Ground for first stage bias circuit. For best performance connect to ground with a 10nH inductor. See pin 16. 9G N D Same as pin 1. 10 RF OUT RF output and bias for the output stage. The power supply for the out- put transistor needs to be supplied to this pin. This can be done through a quarter-wave length microstrip line that is RF grounded at the other end, or through an RF inductor that supports the required DC cur- rents. 11 RF OUT Same as pin 10. See pin 10. 12 RF OUT Same as pin 10. See pin 10. 13 NC Not connected. 14 VCC1 Interstage match and bias for first stage output. Connect interstage matching capacitor to t pin with a short trace. Connect low-frequency bypass capacitors to this pin with a long trace. See evaluation board layout for details. See pin 2. 15 VCC1 Same as pin 14. See pin 2. 16 VCC Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby.Pkg Base GND Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required. See pin 1 and 2. RF IN VCC1 Bond Wire Inductance BIAS RF OUT PWR SEN PWR REF BIAS RF OUT BIAS BIAS VREG1 VREG2 BIAS GND1 BIAS GND2 VCC

1.5 pF 1.5 nH RF IN 390 Ω 390 Ω 1000 pF PWR SEN 1000 pF PWR REF 10 uF 1000 pF VREG1 VREG2 10 uF 1000 pF 10 nH 3.0 pF 3.0 pF 15 nH 1.5 pF 10 pF RF OUT 10 pF 1000 pF 10 uF 6.2 pF 1000 pF 1000 pF 1000 pF VCC VREG1 = 2.4 V VREG2 = 2.4 V VCC = 3.5 V Part is Backside Grounded. TL1 TL2 Transmission Line Length WLAN TL1 25 mil 175 mil TL2

Evaluation Board Schematic 2400MHz to 2483MHz 1 16 15 14 13 5 6 7 8 9 10Bias 1.5 pF 1.5 nH 390 Ω 390 ΩC15 1000 pF P1-3 C16 1000 pF P1-1 C21 10 uF 1000 pF P2-2 P2-1 C20 10 uF C13 1000 pF 10 nH 3.0 pF 3.0 pF 15 nH 1.5 pF 10 pF 10 pF C10 1000 pF C22 10 uF C11 6.2 pF 1000 pF 1000 pF VREG1 = 2.3 V VREG2 = 2.3 V VCC = 3.5 V Part is Backside Grounded. C12 1000 pF 2163400- GND P1-1 PS REF P1-3 PWR SENSE GND P2-2 VREG1 P2-4 VCC P2-1 VREG2 TL1 TL2 RF IN 50 Ω μstrip P2-4 Transmission Line Length TL1 TL2 WLAN 25 mil 175 mil 50 Ω μstrip J2 RF OUT

Board Size 2.0” x 2.0” Board Thickness 0.028”, Board Material FR-4

Theory of Operation and Application Information The RF2163 is a two-stage device with a nominal gain of 19dB in the 2.4GHz to 2.5GHz ISM band. The RF2163 is designed primarily for IEEE802.11B WLAN applications where the available supply voltage and current are not limited. It will meet 802.11B spectral ma sk requirements at an output power of +24dBm. It is especially appropriate for WLAN access points and other base-station type equipment. The RF2163 requires only a single positive supply of 3.3V nominal (or greater) to operate to full specifications. Power control is provided through two bias control input pins (V REG1 and V REG2), but in most applications these are tied together and used as a single control input. There is some external matching on the input and output of the part, thus allowing the part to be used in other applica- tions outside the 2.4GHz to 2.5GHz ISM band (such as MMDS). Both the input and the output of the device need a series DC-blocking capacitor. In some cases, a capacitor used as a matching component can also serve as the blocking cap. The circuit used on the evaluation board is optimized for 3.5V nominal applications. For best results, the PA circuit layout from the evaluation board should be copied as closely as possible, particularly the ground layout and ground vias. Other configurations may also work, but the design process is much easier and quicker if the layout is copied from the RF2163 evaluation board. Gerber files of our designs can be provided upon request. The RF2163 is not a difficult part to implement, but care in circuit layout and component selection is always advisable when designing circuits to operate at 2.5GHz. The most crit ical passive components in the circuit are the input, inter- stage and output matching components (C1, C5, C6, C7, and C11). In these cases, high-Q capacitors suitable for RF applications are used on our evaluation board (a BOM is available on request). High-Q parts are not required in every design, but it is very strongly recommended that the original design be implemented with the same or similar parts used on our evaluation board. Then, less costly components can be substituted in their place, making it easy to test the impact of cheaper components on performance. General RFMD experien ce has indicated that the slightly higher cost of better quality passive components is more than offset by the significant improvements in production yields in large-volume manufacturing. The interstage matching capacitor, C11, along with the combined inductance of the internal bond wire, the short length of circuit board trace, and the parasitic inductance of this capacitor, tunes the peak of the small-signal gain response. The trace length between C11 and pins 14 and 15 should be kept as short as possible. In practice, V CC1, VCC, and the supply for the output stage bias will be tied to this supply line. This can be accomplished using a suitably-long transmission line which is RF shorted on the other end. Ideally the length of this line will be a quar- ter wavelength, but it only needs to be long enough so that the effects of other supply bypass capacitors on the inter- stage match are minimized. If board space is a concern, this isolation can also be accomplished with an RF choke inductor or ferrite bead. Additionally, a higher-value capacitor than shown on the application schematic can be used if bypass capacitors must be closer. A Smith Chart can be used to provide initial guidance for value selection and parts placement. Be aware of the self-resonant frequency (SRF) of higher-valued capacitors. The SRF must be above the fre- quency of operation. The output matching caps are C5, C6, and C7. These are tuned along with the 50Ω transmission line segments TL1 and TL2, as shown on the evaluation board schematic. These segments should be duplicated as closely as possible. Due to variations in FR-4 characteri stics and PCB manufacturer proc ess variations, some benefit will be obtained from small adjustments to these transmission line lengths when the evaluation board layout is duplicated on another design. Prior to full rate manufacturing, the board layout of early prototypes should include some additional exposed ground areas around C5, C6, and C7 to optimize this part of the circuit. In order to reduce component count, the output can also be tuned with a single capacitor. A Smith Chart can help determine the desired value and transmission line length, which can be similarly adjusted on the board prio r to production. This will result in a slightly lo wer-bandwidth and more sensi- tive match, but in most applications the bandwidth is still sufficient.

Power sensing is implemented with the PWR SEN and PWR REF lines. The outputs of these pins are transistor collec- tors and need to be pulled up to the supply through a resistor. PWR REF provides an output current proportional to the output stage bias current, and PWR SEN provides an output current proportional to the total (RF and bias) current of the output stage. The pulllup resistors convert these currents to voltages, and the voltage difference between these two pins is proportional to the RF current. See the graph, “V REF-VSENSE versus POUT”, for the response of this signal. This differ- ence signal can be fed to a power control circuit elsewhere in the end product, or it can be processed at the PA with addi- tional circuitry and used to adjust the V REG voltage(s) to implement automatic level control. Contact RFMD Sales or Applications Engineering for additional data and guidance in using this feature. The RF2163 has primarily been characterized with a voltage on VREG1 and VREG2 of 2.4VDC. However, the RF2163 will operate from a wide range of control voltages. If you prefer to use a control voltage that is significantly different than 2.4VDC, contact RFMD Sales or Applications Engineering for additional data and guidance.

0.0 200.0 400.0 600.0 800.0 1000.0 1200.0 POUT (dBm) ICC (mA) VREF - VSENSE versus POUT -2.0 -1.5 -1.0 -0.5 0.0 0.5 POUT (dBm) Log10 (VREF-VSENSE) Gain and Efficiency versus POUT with 802.11 Modulation 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 POUT (dBm) Gain, Efficiency (dB, %) Gain (dB) Eff