RF2155

RF2155_1 RFMD | Alldatasheet

Document overview

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Technical content

Features

„ Single 3V Supply „ 500mW CW Output Power „ 31dB Small Signal Gain „ Up to 60% Efficiency „ Digitally Controlled Output Power „ 430MHz to 930MHz Fre- quency Range

Applications

„ Analog Communication Sys- tems „ 900MHz Spread Spectrum Systems „ 400MHz Industrial Radios „ Driver Stage for Higher Power „ 3V Applications RF2155 3V Programmable Gain Power Amplifier RF2155PCBA-41X Fully Assembled Evaluation Board Rev B9 DS080128 RoHS Compliant & Pb-Free Product Package Style: Standard Batwing

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Supply Voltage -0.5 to +5.5 V DC Power Down Voltage (VPD) -0.5 to +3.3 V DC Supply Current 500 mA Input RF Power +10 dBm Output Load VSWR 10:1 Ambient Operating Temperature -30 to +85 °C Storage Temperature -40 to +150 °C Parameter Specification Unit ConditionMin. Typ. Max. Overall T=25° C, VCC=3.6V , VPD=2.8V , ZLOAD=13 Ω, PIN=0dBm, Freq=9 15MHz Frequency Range 430 to 930 MHz Maximum CW Output Power 450 mW V CC=3.6V 300 mW V CC=3.0V Small Signal Gain 31 dB Second Harmonic -30 dBc Without ex ternal second harmonic trap Third Harmonic -40 dBc Fourth Harmonic -36 dBc Input VSWR 2:1 All gain settings CW Efficiency 50 56 % G16=“high”, G8=“high”, P IN=0dBm Output Load VSWR 6:1 Spurious<-60dBc Power Control Power Down “ON” 2.7 2.8 3.0 V Voltage supplied to the input Power Down “OFF” 0 0.5 0.8 V Voltage supplied to the input PD Input Current 3.7 5.0 mA Only in “ON” state G16, G8 “ON” 2.2 2.5 3.0 V Voltage supplied to the input G16, G8 “OFF” 0 0.3 0.5 V Voltage supplied to the input G16, G8 Input Current 0.8 1.0 1.6 mA Only in “ON” state Output Power +25.5 +26.5 +28.0 dBm G16=“high”, G8=“high”, P IN=0dBm +15.0 +18.5 +21.0 dBm G16=“high”, G8=“low”, P IN=0dBm +7.5 +10.5 +13.0 dBm G16=“low”, G8=“high”, P IN=0dBm -2.5 +1.5 +4.0 dBm G16=“low”, G8=“low”, P IN=0dBm Turn On/Off Time 100 ns Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Parameter Specification Unit ConditionMin. Typ. Max. Power Supply Power Supply Voltage 3.6 V Specifications 3.0 5.0 V Operating limits Power Supply Current 225 300 mA G16=“high”, G8=“high”, P IN=0dBm 90 115 mA G16=“high”, G8=“low”, P IN=0dBm 3 7 55 mA G16=“low”, G8=“high”, P IN=0dBm 25 35 mA G16=“low”, G8=“low”, P IN=0dBm 20 50 110 mA G16=“high”, G8=“high”, No RF In 11 0 μA G16=“low”, G8=“low”, PD=“low”

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Pin Function Description Interface Schematic 1N C Not internally connected. 2V C C 1 Positive supply for the first stage (driver) amplifier. This is an unmatched transistor collector output. This pin should see an inductive path to AC ground (VCC with a UHF bypassing capacitor). This inductance can be achieved with a short, thin microstrip line (approximately equivalent to 0.4nH). At lower frequencies, the inductance value should be larger (longer microstrip line) and V CC should be bypassed with a larger bypass capaci- tor. This inductance forms a matching network with the amplifier stages, setting the amplifier's frequency of maximum gain. An additional 1μF bypass capacitor in parallel with the UHF bypass capacitor is also recom- mended, but placement of this component is not as critical. A resistor of 39Ω from this pin to pin 3 is necessary to ensure stability under extreme output VSWR conditions. 3V C C 2 Positive supply for the bias circuits. This pin should be bypassed with a sin- gle UHF capacitor, placed as close as possible to the package. 4G N D Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance. 5G N D Same as pin 4. 6G N D 1 Ground return for the first stage; this should be connected to a via very close to the device. 7R F I N Amplifier RF input. This is a 50Ω RF input port to the amplifier. To improve the input match over all four gain control settings, an input inductor of 6.8nH should be added. The amplifier does not contain internal DC block- ing and, therefore, should be externally DC blocked before connecting to any device which has DC present or which contains a DC path to ground. A series UHF capacitor is recommended for the DC blocking. See pin 2. 8P D Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum DC power. When this pin is at 3V the device will be in full power mode delivering maximum available gain and output power capability. This pin should not, in any circumstance, be higher than 3.3V. This pin should also have an external UHF and HF bypassing capacitor. 9N C Not internally connected. 10 NC Not internally connected. 11 RF OUT Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. It is internally connected to pins 11 and 14 to provide low series inductance and flexibility in output matching. Bias for the final power amplifier output transistor must also be provided through one of these pins. Typically, pin 14 is used to supply bias. A transmission line of approximately 500mils length, followed by a bypass capacitor, is adequate. This pin can also be used to create a second harmonic trap. A UHF and large tantalum (1μF) capacitor should be placed on the power supply side of the bias inductor. Pin 11 should be used for the RF output with a match- ing network that presents the optimum load impedance to the PA for maxi- mum power and efficiency, as well as providing DC blocking at the output. 12 GND Same as pin 4. 13 GND Same as pin 4. 14 RF OUT Same as pin 11. 15 G8 RF output power gain control 8dB bit (see specification table for logic). The control voltage at this pin should never exceed 3.3V and a logic high should be at least 2.7V. This pin should also have an external UHF bypass- ing capacitor. Pin Function Description Interface Schematic RF IN VCC1 From Bias Stages PD To RF Stages RF OUT From Bias Stages Gxx VCC2 To RF Stages

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Package Drawing 16 G16 RF output power gain control 16dB bit (see specification table for logic). The control voltage at this pin should never exceed 3.3V and a logic high should be at least 2.7V. This pin should also have an external UHF bypass- ing capacitor. Same as pin 15. 0.035 0.016 0.010 0.008 8° MAX 0° MIN 0.021 0.014 0.392 0.386 0.158 0.150 0.244 0.230 0.069 0.064 0.050 0.060 0.054 -A- 0.009 0.004

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Application Schematic

915 MHz

Evaluation Board Schematic W=55, L=330 mil 3.9 pF 50 Ω 33 pF RF Out W=20, L=570 mil 33 pF 33 pF 33 pF 16 dB Ctrl 8 dB Ctrl VCC 39 Ω W=20, L=180 mil 33 pF 33 pF 6.8 nH33 pF RF In VCC 33 pF Power Down Board Material: FR-4 (Er=4.7) h=30 mil Impedances are critical at pin 2, 7, 11, and 14 P2-1 39 Ω 33 pF 33 pF 1 nF C13 1 μF C14 1 μF 6.8 nH50 Ω μstripRF IN 33 pF L=330 mil, W=55 mil C10 3.9 pF 33 pF 50 Ω μstrip RF OUT L=570 mil, W=20 mil 33 pF P1-1 P2-3 C12 1 nF 33 pF 33 pF P1-3 33 pF 1 nF P1-1 P1-3 PD GND VB21 P2-1 P2-3 VB1 GND VCC1

2155400 Rev -

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Evaluation Board Layout Board Size 2.0” x 2.0”

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Pout and Icc vs. Pin, State 10 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) -20 -15 -10 -5 0 5 10 Pin (dBm) Pout (dBm) 100 150 200 250 300 Icc (mA) Pout Icc Pout and Icc vs. Pin, State 11 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) -20 -15 -10 -5 0 5 10 Pin (dBm) Pout (dBm) 100 150 200 250 300 Icc (mA) Pout Icc Pout and Icc vs. Pin, State 01 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) -10 -20 -15 -10 -5 0 5 10 Pin (dBm) Pout (dBm) 100 150 200 250 300 Icc (mA) Pout Icc Pout and Icc vs. Pin, State 01 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) -20 -15 -10 -20 -15 -10 -5 0 5 10 Pin (dBm) Pout (dBm) 100 150 200 250 300 Icc (mA) Pout Icc Pout and Efficiency vs. Vcc, Full Gain (915 MHz, Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) Vcc (Volts) Pout (dBm) 45.0 48.0 51.0 54.0 57.0 60.0 Efficiency (%) Pout Efficiency Pout vs. Temperature, All Gain Settings (Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) - 2 5- 5 1 53 55 57 59 5 Temperature (°C) Pout (dBm) Bit1=1;Bit2=1 Bit1=1;Bit2=0 Bit1=0;Bit2=1 Bit1=0;Bit2=0

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Pout vs. Frequency, All Gain Settings (Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) 870 880 890 900 910 920 930 940 950 960 Frequency (MHz) Pout (dBm) Bit1=0;Bit2=0 Bit1=0;Bit2=1 Bit1=1;Bit2=0 Bit1=1;Bit2=1 Icc vs. Frequency, All Gain Settings (Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) 100 150 200 250 870 880 890 900 910 920 930 940 950 960 Frequency (MHz) Icc (mA) Bit1=1;Bit2=1 Bit1=1;Bit2=0 Bit1=0;Bit2=1 Bit1=0;Bit2=0 RoHS Compliant: Y es Package total w eight in grams (g): 0.139 Compliance Date Code: 0631 Bill of Materials Revision: - Pb Free Category: e3 Pb Cd Hg Cr V I PBB PBDE Die 000000 Molding Compound 000000 Lead Frame 000000 Die Attach Epoxy 000000 Wire 000000 Solder Plating 000000 * DIRECTIV E 2002/95/EC OF THE EUROPEA N PA RLIA MENT A ND OF THE COUNCIL of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment RoHS* Banned Material Content Bill of M aterials Parts Per M illion (PPM ) This RoHS banned material content declaration w as prepared solely on information, including analytical data, provided to RFM D by its suppliers, and applies to the Bill of M aterials (BOM ) revision noted above.

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.