RF2103P

RF2103P RFMD | Alldatasheet

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Functional Block Diagram RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA T el (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Optimum Technology Matching® Applied Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS SiGe HBT Si CMOS RF IN GND GND PD VCC1 VCC2 PRE AMP PWR RF OUT RF OUT GND GND GND RF OUT RF OUT BIAS CIRCUITS FPAPRE AMP RF2103P MEDIUM POWER LINEAR AMPLIFIER

• Digital Communication Systems  Spread-Spectrum Communication Systems  Driver for Higher Power Linear Applications  Portable Battery-Powered Equipment  Commercial and Consumer Systems  Base Station Equipment The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and 1000MHz. It may also be used as a driver amplifier in higher power applications. The device is self-contained with the exception of the output matching network, power supply feed line, and bypass capacitors, and it produces an output power level of 750mW (CW). The device can be used in 3 cell battery applications. The maximum CW output at 3.6V is 175mW. The unit has a total gain of 31dB, depending upon the output matching network.  450MHz to 1000MHz Operation  Up to 750mW CW Output Power  31dB Small Signal Gain  Single 2.7V to 7.5V Supply  47% Efficiency  Digitally Controlled Power Down Mode RF2103P Medium Power Linear Amplifier RF2103P PCBA Fully Assembled Evaluation Board Rev B1 010720 0.156 0.148 0.059 0.057 0.252 0.236 0.010 0.004.018 .014 8° MAX 0° MIN 0.0500 0.0164 0.010 0.007 0.347 0.339 0.050 Package Style: SOIC-14

Supply Voltage -0.5 to +7.5 V DC Power Down Voltage (VPD )- 0 . 5 t o + 5 V DC Supply Current 350 mA Input RF Power +12 dBm Output Load VSWR 10:1 Operating Case Temperature -40 to +100 °C Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Parameter Specification Unit ConditionMin. Typ. Max. Overall T=25° C, VCC =5.8V , VPD =5.0V , ZLOAD =18 Ω ,PIN=0dBm, F req=915MHz Frequency Range 450 to 1000 MHz Maximum Output Power +28.8 dBm V CC =7.5V Maximum Output Power +26.5 dBm V CC =5.8V Second Harmonic -24 dBc Without external second harmonic trap Third Harmonic -30 dBc Output Noise Power <-125 dBm/Hz Input Impedance 50 Ω With external matching network; see appli- cation schematic Input VSWR <2:1 With external matching network; see appli- cation schematic Output Impedance 18+j0 Ω Load Impedance for Optimal Match Nominal 5.8V Configuration VCC =5.8V , VPD =4.0V , ZLOAD =18 Ω , PIN=0dBm, Freq=830MHz Linear Power Gain 31 dB Saturated CW Output Power 24 +26.5 dBm IM3 -40 -25 dBc P OUT =+18.5dBm/tone IM5 -45 -30 dBc P OUT =+18.5dBm/tone Collector Current, ICC 175 250 mA Total of pins 7 and 8 VPD Current <3.5 mA Into pin 4 CW Total Efficiency 47 % Two Tone Total Efficiency 26 % P OUT =+18.5dBm/tone Power Supply Power Supply Voltage 2.7 to 7.5 V Power Supply Idle Current 45 80 mA Total "OFF" Current Drain 1 10 µA VPD <0.1VDC Tur n-on Time <100 ns V PD =0 to VPD =+4V DC Caution!ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).

Pin Function Description Interface Schematic 1R F I N RF input pin. There is an internal blocking capacitor between this pin and the preamp input, but not between the pin and an internal 2kΩ resistor to ground. 2G N D Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. 3G N D Same as pin 2. 4P D Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum DC power. When this pin is at V CC (3V to 6.5V), the device will be in full power mode delivering maxi- mum available gain and output power capability. This pin may also be used to perform some degree of gain control or power control when set to voltages between 0V and VCC . It is not optimized for this function so the transfer function is not linear over a wide range as with other devices specifically designed for analog gain control; however, it may be usable for coarse adjustment or in some closed loop AGC systems. This pin should not, in any circumstance, be higher in voltage than V CC . This pin should also have an external bypassing capacitor. 5V C C 1 Positive supply for the active bias circuits. This pin can be externally combined with pin 6 (VCC2) and the pair bypassed with a single capac- itor, placed as close as possible to the package. Additional bypassing of 1µF is also recommended, but proximity to the package is not as crit- ical. In most applications, pins 5, 6, and 7 can share a single 1µF bypass capacitor. 6V C C 2 Same as pin 5. 7P R E A M P PWR Positive supply for the pre-amplifier. This is an unmatched transistor collector output. This pin should see an inductive path to AC ground (VCC with bypass capacitor). This inductance can be achieved with a short, thin microstrip line or with a low value chip inductor (approxi- mately 1.8nH). At lower frequencies, the inductance value should be larger (longer microstrip line) and VCC should be bypassed with a larger bypass capacitor. This inductance forms a matching network with the internal series capacitor between the two amplifier stages, set- ting the amplifier’s frequency of maximum gain. An additional 1µF bypass capacitor in parallel with the 100pF bypass capacitor is also recommended, but placement of this component is not as critical. In most applications, pins 5, 6, and 7 can share a single 1µF bypass capacitor. 8R F O U T Same as pin 14. 9R F O U T Same as pin 14. 10 GND Same as pin 2. 11 GND Same as pin 2. 12 GND Same as pin 2. 13 RF OUT Same as pin 14.

Pin Function Description Interface Schematic 14 RF OUT Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. It is internally connected to pins 8, 9, 13 and 14 to provide low series inductance and flexibility in output matching. Bias for the final power amplifier output transistor must also be provided through two of these four pins. Typically, pins 8 and 9 are connected to a network that provides the DC bias and also creates a second har- monic trap. For 915MHz operation, this harmonic trap network is simply a single 2pF capacitor from both pins to ground. This capacitor series resonates with internal bond wires at two times the operating fre- quency, effectively shorting out the second harmonic. Shorting out this harmonic serves to increase the amplifier’s maximum output power and efficiency, as well as to lower the level of the second harmonic output. Typically, pins 13 and 14 are externally connected very close to the package and used as the RF output with a matching network that pre- sents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output. Shunt protec- tion diodes are included to clip peak voltage excursions above approxi- mately 15V to prevent voltage breakdown in worst case conditions. BIAS CIRCUITS PRE AMP FPA 100 pF 100 pF 330 pF µ F VCC RF OUT 22 Ω 12 nH 6.8 nH VB VCC 100 pF .01" x .2" (PCB material: FR-4, Thickness:0.031") RF IN For lower frequency operation: Cut trace on board and insert inductor L4 FREQUENCY (MHz) L1 (nH) L3 (nH)L2 (nH) L4 (nH) C1 (pF) C2 (pF) 275 480 915 20 15 10 20 20 10 12 6.8 4.7 18 12 6.8 6.8 3.3 4 2 For lower frequency operation: Cut trace on board and insert inductor L3

Evaluation Board Schematic 915MHz Operation (Download Bill of Materialsfrom www.rfmd.com.) SMA P1-3 P1-1 P1-1 0.01" x 0.2" (PCB mat'l: FR-4, Thickness: 0.031") C10 100 pF 100 pF 100 pF 100 pF 3.3 nH P1-1 4p F RF IN 6.8 nH 2p F 330 pF RF OUT

2103400 Rev C

50 Ω Matching Network BIAS CIRCUITS FPAPRE AMPL3 12 nH 100 pF 6.8 nH 22 Ω P1-1 P1-3 VCC GND VB 1n F 1n F 50 Ω µ strip 50 Ω µ strip

1.4” x 1.4”

Gain and Pout vs. Pin Vcc=Vb=3.6 V, 915 MHz -25 -20 -15 -10 -5 0 5 Pin (dBm) Gain (dB), Pout (dBm) Pout (+25°C) Gain (+25°C) Pout (-40°C) Gain (-40°C) Pout (+85°C) Gain (+85°C) Gain and Pout vs. Pin Vcc=Vb=4.8 V, 915 MHz -25 -20 -15 -10 -5 0 5 Pin (dBm) Gain (dB), Pout (dBm) Pout (+25°C) Gain (+25°C) Pout (-40°C) Gain (-40°C) Pout (+85°C) Gain (+85°C) Efficiency and Icc vs. Pout Vcc=Vb=3.6 V, 915 MHz 0 5 10 15 20 25 30 Pout (dBm) Efficiency (%) 110 160 210 260 Icc (mA) Eff (+25°C) Eff (-40°C) Eff (+85°C) Icc (+25°C) Icc (-40°C) Icc (+85°C) Gain and Pout vs. Pin Vcc=6.0 V, Vb=5.0 V, 915 MHz -25 -20 -15 -10 -5 0 5 Pin (dBm) Gain (dB), Pout (dBm) Pout (+25°C) Gain (+25°C) Pout (-40°C) Gain (-40°C) Pout (+85°C) Gain (+85°C) Efficiency and Icc vs. Pout Vcc=6.0 V, Vb=5.0 V, 915 MHz 0 5 10 15 20 25 30 Pout (dBm) Efficiency (%) 110 160 210 260 Icc (mA) Eff (+25°C) Eff (-40°C) Eff (+85°C) Icc (+25°C) Icc (-40°C) Icc (+85°C) Efficiency and Icc vs. Pout Vcc=Vb=3.6 V, 915 MHz 0 5 10 15 20 25 30 Pout (dBm) Efficiency (%) 110 160 210 260 Icc (mA) Eff (+25°C) Eff (-40°C) Eff (+85°C) Icc (+25°C) Icc (-40°C) Icc (+85°C)

IM3, IM5, and IM2 vs. Pout Vcc=Vb=3.6 V, 915 MHz -60 -50 -40 -30 -20 -10 -15 -10 -5 0 5 10 15 20 25 Pout per Tone (dBm) Intermodulation Products (dBc) IM3 IM5 IM2 Harmonics vs. Pout Vcc=Vb=3.6 V, 915 MHz -60 -50 -40 -30 -20 -10 5 1 01 52 02 53 0 Fundamental Pout (dBm) Harmonic Level (dBc) 2Fo 3Fo 4Fo 5Fo 6Fo 7Fo IM3, IM5, and IM2 vs. Pout Vcc=Vb=4.8 V, 915 MHz -60 -50 -40 -30 -20 -10 -15 -10 -5 0 5 10 15 20 25 Pout per Tone (dBm) Intermodulation Products (dBc) IM3 IM5 IM2 Harmonics vs. Pout Vcc=Vb=4.8 V, 915 MHz -60 -50 -40 -30 -20 -10 5 1 01 52 02 53 0 Fundamental Pout (dBm) Harmonic Level (dBc) 2Fo 3Fo 4Fo 5Fo 6Fo 7Fo IM3, IM5, and IM2 vs. Pout Vcc=6.0 V, Vb=5.0 V, 915 MHz -60 -50 -40 -30 -20 -10 -15 -10 -5 0 5 10 15 20 25 Pout per Tone (dBm) Intermodulation Products (dBc) IM3 IM5 IM2 Harmonics vs. Pout Vcc=6.0 V,Vb=5.0 V, 915 MHz -60 -50 -40 -30 -20 -10 5 1 01 52 02 53 0 Fundamental Pout (dBm) Harmonic Level (dBc) 2Fo 3Fo 4Fo 5Fo 6Fo 7Fo

Pout vs. Vb Vcc=3.6 V, Pin=0 dBm, 915 MHz -30 -20 -10 Vb (Volts) Pout (dBm) +25°C -40°C +85°C Efficiency vs. Vb Vcc=3.6 V, Pin=0 dBm, 915 MHz Vb (Volts) Efficiency (%) +25°C -40°C +85°C Pout vs. Vb Vcc=4.8 V, Pin=0 dBm, 915 MHz -30 -20 -10 Vb (Volts) Pout (dBm) +25°C -40°C +85°C Efficiency vs. Vb Vcc=4.8 V, Pin=0 dBm, 915 MHz Vb (Volts) Efficiency (%) +25°C -40°C +85°C Pout vs. Vb Vcc=6.0 V, Pin=0 dBm, 915 MHz -30 -20 -10 Vb (Volts) Pout (dBm) +25°C -40°C +85°C Efficiency vs. Vb Vcc=6.0 V, Pin=0 dBm, 915 MHz Vb (Volts) Efficiency (%) +25°C -40°C +85°C

Psat vs. Vcc Vb=Vcc; Vb≤≤≤≤5.0 V, 915 MHz Vcc (Volts) Psat (dBm) Vb Required to Achieve Specific Pout (Vb<5.0 V, 915 MHz) Vcc (Volts) Vb (Volts) 27dBm 24dBm 21dBm 18dBm 15dBm Two Tone Pout vs. Pin,

915 MHz

-25 -20 -15 -10 -5 0 5 Pin, per Tone (dBm) Pout, per Tone (dBm) Vcc=Vb=3.6V Vcc=Vb=4.8V Vcc=6.0V, Vb=5.0V Two Tone Efficiency and Icc vs. Pout, Pout, per Tone (dBm) Two Tone Efficiency (%) 110 160 210 260 Two Tone Icc (mA) Eff (Vcc=Vb=3.6V) Eff (Vcc=Vb=4.8V) Eff (Vcc=6.0V, Vb=5.0V) Icc (Vcc=Vb=3.6V) Icc (Vcc=Vb=4.8V) Icc (Vcc=6.0V, Vb=5.0V)