RF2046_07 RFMD | Alldatasheet

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RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Optimum Technology Matching® Applied Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS RF OUTRF OUTRF IN GND GND MARKING - C6 RF2046 GENERAL PURPOSE AMPLIFIER

  • Broadband, Low Noise Gain Blocks
  • IF or RF Buffer Amplifiers
  • Driver Stage for Power Amplifiers
  • Final PA for Low Power Applications
  • High Reliability Applications
  • Broadband Test Equipment The RF2046 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro- cess, and has been designed for use as an easily-cas- cadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC biasing elements to operate as specified. With a goal of enhanced reliability, the extremely small Micro-X ceramic package offers significantly lower thermal resistance than similar size plastic packages.
  • DC to 3000MHz Operation
  • Internally matched Input and Output
  • 22dB Small Signal Gain
  • 3.0dB Noise Figure
  • 10mW Linear Output Power
  • Single Positive Power Supply RF2046 General Purpose Amplifier RF2046PCBA-41XFully Assembled Evaluation Board Rev A11 050207 NOTES: 1. Shaded lead is pin 1. 2. Darkened areas are metallization. 3. Dimension applies to ceramic lid minus epoxy coating. 0.070 sq. 45° ± 1° 0.068 ± 0.002 0.052 0.041 0.025 ± 0.002 0.005 ± 0.002 0.015 +0.002 -0.001 0.020 ± 0.002 0.040 ± 0.002 0.200 Sq. Typ. Package Style: Micro-X Ceramic

Operating Ambient Temperature -40 to +85 °C Storage Temperature -60 to +150 °C Parameter Specification Unit ConditionMin. Typ. Max. Overall T=25 °C, VD=3.5V, ICC=35mA Frequency Range DC to 3000 MHz Gain 22.7 dB Freq=100MHz 22.1 dB Freq=1000MHz 18 21.0 dB Freq=2000MHz 19.2 dB Freq=3000MHz Gain Flatness ±0.9 dB 100MHz to 2000MHz Noise Figure 2.7 dB Freq=2000MHz Input VSWR <2.0:1 In a 50 Ω system, DC to 3000MHz Output VSWR <1.9:1 In a 50 Ω system, DC to 3000MHz Output IP 3 +23.5 dBm Freq=2000MHz±100kHz, P TONE=-18dBm Output P1dB +10.7 dBm Freq=2000MHz Reverse Isolation 22.8 dB Freq=2000MHz Thermal ICC=35mA, P DISS=116mW (See Note 1.) ThetaJC 275 °C/W Maximum Measured Junction Temperature at DC Bias Con- ditions 117 °C Mean Time To Failure (MTTF) 280,000 years T AMB=+85°C Power Supply With 22Ω bias resistor, T=+25°C Device Operating Voltage 3.0 3.5 4.0 V At pin 3 with I CC=35mA 3.6 4.3 4.6 V At evaluation board connector, I CC=35mA Operating Current 35 mA See Note 2. NOTES: Note 1: The RF2046 must be operated at or below 35mA in order to achieve the thermal performance stated above. Operating at 35mA will ensure the best possible combination of reliability and electrical performance. Note 2: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 35mA over all intended operating conditions. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).

Pin Function Description Interface Schematic 1R F I N RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC-coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instabil- ity. 2G N D Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. 3R F O U T RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to V CC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is deter- mined by the following equation: Care should also be taken in the resistor selection to ensure that the current into the part never exceeds 35mA over the planned oper- ating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 3.5V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. 4G N D Same as pin 2. R VSUPPLY VDEVICE–() ICC RF OUT RF IN RF OUT 22 pF RBIAS 10 nF 22 pF 47 nH 22 pF RF IN VCC

Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) Evaluation Board Layout Board Size 1.195" x 1.000" 100 pF 100 pF50 Ω μstrip 50 Ω μstrip RF OUT RF IN P1-1 NC VCC GND 100 nH 22 Ω VCC P1-1 100 pF 1 μF Drawing 204X400-

Gain versus Frequency Across Temperature ICC=35mA 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 Frequency (MHz) Gain (dB) -40°C 25°C 85°C Output P1dB versus Frequency Across Temperature ICC=35mA 10.0 11.0 12.0 13.0 14.0 15.0 Frequency (MHz) Output Power (dBm) -40°C 25°C 85°C Output IP3 versus Frequency Across Temperature ICC=35mA 22.0 23.0 24.0 25.0 26.0 27.0 Frequency (MHz) 3rd Order Intercept Power (dBm) -40°C 25°C 85°C Noise Figure versus Frequency Across Temperature ICC=35mA 1.0 2.0 3.0 4.0 5.0 Frequency (MHz) Noise Figure (dB) -40°C 25°C 85°C Input VSWR versus Frequency Across Temperature ICC=35mA 1.00 1.25 1.50 1.75 2.00 2.25 2.50 Frequency (MHz) VSWR -40°C 25°C 85°C Output VSWR versus Frequency Across Temperature ICC=35mA 1.00 1.25 1.50 1.75 2.00 2.25 2.50 Frequency (MHz) VSWR -40°C 25°C 85°C

Reverse Isolation versus Frequency Across Temperature ICC=35mA 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 Frequency (MHz) Reverse Isolation (dB) -40°C 25°C 85°C Typical Current versus Voltage (At Evaluation Board Connect, RBIAS=22 Ohms) 10.0 20.0 30.0 40.0 50.0 VCC (V) ICC (mA) -40°C 25°C 85°C Typical ICC versus VPIN (At Pin 3) 10.0 20.0 30.0 40.0 50.0 VPIN (V) ICC (mA) -40°C 25°C 85°C Vcc=4.2 V Power Dissipated versus Voltage at Pin 3 (TAMBIENT=85°C) 0.00 0.05 0.10 0.15 0.20 VPIN (V) Power Dissipated (W) TMAX versus PDISS (TAMBIENT=85°C) 95.00 100.00 105.00 110.00 115.00 120.00 125.00 130.00 135.00 140.00 PDISS (W) TMAX (°C) MTTF versus Junction Temperature (Valid for ICC<35mA) RFMD HBT2um AlGaAs-2 (60% Confidence Interval) 10.0 100.0 1000.0 10000.0 100000.0 1000000.0 10000000.0 Junction Temperature (°C) MTTF (Years)

3μinch to 8μinch Gold over 180μinch Nickel. assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances. Figure 1. PCB Metal Land Pattern - RF204X (Top View)

clearance can be provided in the master data or requested from the PCB fabrication supplier. Figure 2. PCB Solder Mask - RF204X (Top View)