RF2043 RFMD | Alldatasheet

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Functional Block Diagram RF Micro Devices, Inc.

7625 Thorndike Road

Greensboro, NC 27409, USA T el (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Optimum Technology Matching® Applied Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS SiGe HBT Si CMOS RF OUTRF OUTRF IN GND GND MARKING - C3 RF2043 GENERAL PURPOSE AMPLIFIER

  • Broadband, Low Noise Gain Blocks  IF or RF Buffer Amplifiers  Driver Stage for Power Amplifiers  Final P A for Low Power Applications  High Reliability Applications  Broadband Test Equipment The RF2043 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro- cess, and has been designed for use as an easily-cas- cadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified. With a goal of enhanced reliability, the extremely small Micro-X ceramic package offers significantly lower thermal resistance than similar size plastic packages.  DC to >6000MHz Operation  Internally matched Input and Output  11dB Small Signal Gain  +35dBm Output IP3  +18.5dBm Output Power  Extremely Flat Gain Response RF2043 General Purpose Amplifier RF204X PCBA Fully Assembled Evaluation Board Rev A4 010110 0.070 sq. 45° +1 ° 0.055 + 0.005 0.020 + 0.002 0.040 + 0.002 NOTES: 1. Shaded lead is pin 1. 2. Darkened areas are metallization. 0.200 sq. Typ Package Style: Micro-X Ceramic

Operating Ambient Temperature -40 to +85 °C Storage Temperature -60 to +150 °C Parameter Specification Unit ConditionMin. Typ. Max. Overall T=25 °C, VD =5.5V , ICC =70mA Frequency Range DC to >6000 MHz 1dB Bandwidth 5.5 GHz Gain 11.3 dB Freq=100MHz 11.3 dB Freq=1000MHz 10.2 11.4 dB Freq=2000MHz 11.5 dB Freq=3000MHz

11.5 Freq=4000MHz

9.9 Freq=6000MHz

Gain Flatness ±0.05 dB 100MHz to 2000MHz Noise Figure 7.6 dB Freq=1000MHz Input VSWR <1.8:1 In a 50 Ω system, DC to 3000MHz <2.5:1 In a 50 Ω system, 3000MHz to 6000MHz Output VSWR <1.8:1 In a 50 Ω system, DC to 3000MHz <2.6:1 In a 50 Ω system, 3000MHz to 6000MHz Output IP3 +34.5 dBm Freq=1000MHz Output P1dB +18.5 dBm Freq=1000MHz Reverse Isolation 16.5 dB Freq=1000MHz Thermal ICC =70mA, P DISS =370mW ThetaJC 149 °C/W Maximum Measured Junction Temperature at DC Bias Con- ditions 142 °C T AMB =+85°C Mean Time Between Failures 1.4x103 years T AMB =+85°C 3.4x105 years T AMB =+25°C 1.8x109 years T AMB =-40°C Power Supply With 22Ω bias resistor Device Operating Voltage 5.0 5.5 6.0 V At pin 3 with I CC =70mA Operating Current 70 mA Caution!ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).

Pin Function Description Interface Schematic 1R F I N RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instabil- ity. 2G N D Ground connection. Keep traces physically short and connect immedi- ately to ground plane for best performance. 3R F O U T RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to V CC . The resistor is selected to set the DC current into this pin to a desired level. The resistor value is deter- mined by the following equation: Care should also be taken in the resistor selection toensure that the current into the part never exceeds 120 mA over the planned oper- ating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.5V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. 4G N D Same as pin 2. R V SUPPLY( V DEVICE )– ICC RF OUT RF IN R FO U T 22 pF RBIAS 10 nF 22 pF 47 nH 22 pF RF IN VCC

Evaluation Board Schematic (Download Bill of Materialsfrom www.rfmd.com.) Evaluation Board Layout Board Size 1.195" x 1.000" 100 pF 100 pF50Ωµ strip 50Ωµ strip RF OUT RF IN P1-1 NC VCC GND 100 nH 22Ω VCC P1-1 100 pF 1µ F Drawing 204X400-

Gain versus Frequency Across Temperature ICC =7 0m A 8.00 9.00 10.00 11.00 12.00 13.00 Frequency (GHz) Gain (dB) -40 C 26 C 85 C Output P1dB versus Frequency Across Temperature ICC =7 0m A 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 19.00 20.00 Frequency (GHz) Output Power (dBm) -4 0C 26 C 85 C Output IP3 versus Frequency Across Temperature ICC =7 0m A 20.00 22.00 24.00 26.00 28.00 30.00 32.00 34.00 36.00 Frequency (GHz) 3rd Order Intercept Power (dBm) -40 C 26 C 85 C Noise Figure versus Frequency Across Temperature ICC =7 0m A 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 Frequency (GHz) Noise Figure (dB) -40 C 26 C 85 C Input VSWR versus Frequency Across Temperature ICC =7 0m A 1.00 1.50 2.00 Frequency (GHz) VSWR -40 C 26 C 85 C Output VSWR versus Frequency Across Temperature ICC =7 0m A 1.00 1.50 2.00 2.50 3.00 Frequency (GHz) VSWR -40 C 26 C 85 C

15.00 16.00 17.00 18.00 19.00 20.00 21.00 22.00 Frequency (GHz) Reverse Isolation (dB) -40 C 26 C 85 C Reverse Isolation versus Frequency Across Temperature ICC =7 0m A