RB715W TEL | Alldatasheet
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R B 7 1 5 W SCHOTTKY BARRIER DIODE FEATURES: Power dissipation P D: 2 0 0 m W ( T a mb = 2 5℃) Collector current I F: 3 0 mA Collector-base voltage V R: 4 0 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: MARKING: 3D ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Reverse breakdown voltage V(BR) IR= 100µA 40 V Reverse voltage leakage current IR V R=10V 1 µA Forward voltage VF IF=1mA 0.37 V Diode capacitance CD V R=1V, f=1MHz 2 pF SOT-523