2SC1674 TEL | Alldatasheet
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TO-92 Plastic-Encapsulated Transistors 2SC1674 TRANSISTOR (NPN) FEATURE Power dissipation P CM: 0 . 2 5 W ( T a m b = 2 5℃) Collector current I CM: 0 . 0 2 A Collector-base voltage V (BR)CBO: 3 0 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= 100µA , IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO I C= 1 mA, I B=0 20 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 4 V Collector cut-off current ICBO V CB= 30V, I E=0 0.1 µA Emitter cut-off current IEBO V EB=3V , I C=0 0.1 µA DC current gain hFE V CE=6 V, IC= 1mA 40 180 Collector-emitter saturation voltage VCE(sat) I C=10 mA, IB= 1 mA 0.3 V Base-emitter voltage VBE(ON) V CE=6 V, IC= 1mA 0.72 V Transition frequency f T VCE=6 V, IC= 1mA 400 MHz Collector output capacitance Cob VCE=6V, IE=0, f=1MHz 1.5 pF Noise figure NF VCE=6V, IC=1mA, f=100MHz, RS=50Ω 5 dB Power gain GP VCE=6V,IC=1mA,f=100MHz 18 dB CLASSIFICATION OF hFE(1) Rank Y GR BL Range 40-80 60-120 90-180 1 2 3 TO-92 1. EMITTER 2. COLLECTOR 3. BASE Transys Electronics LI M ITE D