BAS29 TEL | Alldatasheet
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SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. ABSOLUTE MAXIMUM RATINGS (per diode) Continuous reverse voltage V R max. 90 V Repetitive peak forward current I FRM max. 600 mA Forward current I F max. 250 mA Junction temperature T j max. 150 °C Forward voltage at IF = 50 mA V F < 0.84 V Reverse recovery time when switched from IF = 30 mA to I R = 30 mA; R L = 100 Ω ; measured at IR = 3 mA t rr < 75 ns RATINGS (per diode) (at T A = 25°C unless otherwise specified) Limiting values Continuous reverse voltage V R max. 90 V Repetitive peak forward current I FRM max. 600 mA Repetitive peak reverse current I RRM max. 600 mA BAS29, BAS31, BAS35 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Marking BAS29– L20 BAS31 – L21 BAS35 – L22 1 2 1 2 1 2 BAS29 BAS31 BAS35 SOT-23 Transys Electronics LI M ITE D
Average rectified forward current (averaged over any 20 ms period) I F(AV) max. 250 mA Non-repetitive peak forward current t = 1 µs; T j = 25 °C prior to surge; per crystal I FSM max. 3 A t = 1 s; T j = 25 °C prior to surge; per crystal max. 0.75 A Forward current (D) I F max. 250 mA Repetitive peak reverse energy tp ≥ 50 µs; f ≤ 20 Hz; T j = 25 °C ERRM max. 5.0 mJ Storage temperature Tstg –55 to +150 °C Junction temperature Tj max. 150 °C THERMAL RESISTANCE From junction to ambient* R th j–a = 430 K/W CHARACTERISTICS (per diode) Tamb = 25 °C unless otherwise specified Forward voltage IF = 10 mA V F < 0.75 V IF = 50 mA V F < 0.84 V IF = 100 mA V F < 0.90 V IF = 200 mA V F < 1.00 V IF = 400 mA V F < 1.25 V Reverse currents VR = 90 V I R < 100 nA VR = 90 V; T amb = 150 °C I R < 100 µA Reverse avalanche breakdown voltage IR = 1 mA V (BR)R 120 to 175 V Diode capacitance VR = 0; f = 1 MHz C d < 35 pF Reverse recovery time when switched from IF = 30 mA to I R = 30 mA; R L = 100 Ω ; measured at IR = 3 mA t rr <7 5 n s * When mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm. BAS29, BAS31, BAS35