RB715F TEL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
- 30¡ À0. 05 1. 25¡ À0. 05 1.30¡À0.03 0.30 2.00¡À0.05
1.01 REF
RB715F SCHOTTKY BARRIER DIODE FEATURES: Power dissipation P D: 2 0 0 m W ( T a mb = 2 5℃) Collector current I F: 3 0 mA Collector-base voltage V R: 4 0 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: MARKING: 3D ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Reverse breakdown voltage V(BR) IR= 100µA 40 V Reverse voltage leakage current IR V R=10V 1 µA Forward voltage VF IF=1mA 0.37 V Diode capacitance CD V R=1V, f=1MHz 5 pF Unit: mm SOT-323