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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes R B 71
5 F SCHOTTKY BARRIER
FEATURES: Extra small power mold t y pe Low VF High reliability MARKING: 3D Maximum Ratings @Ta=2 5 ℃ Parameter Symbol Limit Unit Peak reve rse voltage VRM 40 V DC rever se voltage VR 40 V 1RQUHSHWLWLYHPeak )orward 6urge &urrent#W PV IFSM 200 mA Aver age forward current IO 30 mA Power dis sipation PD 200 mW Junction tem perature Tj 125 ℃ Storag e temperature Tstg -55+~150 ℃ ELECTRICAL CHA RACTERISTICS (Ta=25℃ unless other wise specified) Parame ter Sy mbol Test conditions Min Typ Max Unit Revers e voltage leakage current IR V R=10V 1 μA Forward voltage VF IF=1mA 0.37 V Capacitance b etween terminals CT VR=1V, f=1MHz 2.0 pF SOT-323 Thermal Resistance Junction to Ambient 5ș-$ 500 ℃/W www.cj-elec.com 1 D,Oct,2015 Solid dot = Green molding compound device,if none, the normal device.
0.1 100 200 01 0 2 0 3 0 4 0 1E-3 0.01 0.1 0 5 10 15 20 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta ( )℃ Ta=100℃ Ta=25℃ FORWARD CURRENT IF (mA) FORWARD VOLTAGE VF (V) Ta=100℃ Ta=25℃ REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) Ta=25℃ f=1MHz Capacitance Characteristics REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TERMINALS CT (pF) Typical Characteristics www.cj-elec.com 2 D,Oct,2015
A 0. 900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-323 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com D,Oct,2015
www.cj-elec.com 4 A,Jun,2014www.cj-elec.com D,Oct,2015