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TRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes RB706F-40 Schottky Barrier Diode
FEATURES
MAKING: 3J· Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifyi ng current IO 30 mA Non-repetitive Peak Forward Surge Current@t=8.3ms IFSM 200 mA Powe r dissipation PD 200 mW Junction temperature Tj 125 ℃ Storage temperature Tstg -55+150 ℃ Electrical Ratings @Ta=25℃ Parameter Sy mbol Min Typ Max Unit Conditions Forwa rd voltage VF 0.37 V IF=1mA Reverse curr ent IR 1 μA VR=10V Capacita nce between terminals C T 2 pF VR=1V, f=1MHZ SOT-323 Thermal Resistance from RθJA 500Junction to Ambient ℃/ W www.cj-elec.com 1 D,Oct,2015 Solid dot = Green molding compound device,if none, the normal device.
1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 0.00 0.05 0.10 0.15 0.20 0.25 0.30 01 0 2 0 3 0 4 0 1E-3 0.01 0.1 0.1 REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz Capacitance Characteristics AMBIENT TEMPERATURE Ta ( )℃ POWER DISSIPATION PD (W) Power Derating Curve Ta=25℃ Ta=100℃ REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) Reverse Characteristics Ta=25℃ Ta=100℃ Forward Characteristics FORWARD CURRENT IF (mA) FORWARD VOLTAGE VF (V) Typical Characteristics www.cj-elec.com 2 D,Oct,2015
A 0.9 00 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-323 Suggested Pad Lay out www.cj-elec.com 3 A,Jun2014www.cj-elec.com D,Oct,2015
www.cj-elec.com 4 A,Jun,2014www.cj-elec.com D,Oct,2015