DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., L TD SOD-323 Plastic-Encapsulate Diodes RB551V-40 Schottky Barrier Diode
FEATURES
z Small Surface Mounting Type z Low VF z High Reliability
APPLICATIONS
ency Rectification Switching Regulators MARKING: D4 MAXIMUM RATINGS (Ta =25℃ unless otherw ise noted ) Symbol Parameter V a lue Unit VRM Non-Rep etitive Peak Reverse Voltage 40 V IO Continuous F orward Current 500 mA IFSM Non-repetitive For ward Peak Surge Current @t=8.3ms 2 A PD Power Dissi pation 200 mW RθJA Thermal Resistance F rom Junction To Ambient 500 ℃/W Tj Junction Temperature 125 ℃ Tstg Storage T emperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Sy mbol Test conditions Min Typ Max Unit Reverse v oltage V(BR) I R=0.1mA 40 V Reverse cu rrent IR V R=40V 0.1 mA Forwa rd voltage VF I F=500mA 0.47 V SOD-323 www.cj-elec.com 1 F,Mar,2015 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device.
0.1 100 5 1 01 52 02 53 03 54 0 0.1 100 1000 0 25 50 75 100 125 100 150 200 250 0 5 10 15 20 25 30 35 100 120 500 0.1 Forwa rd Characteristics FORWARD VOLT AGE VF (mV) FORWARD CURRENT IF (mA) Ta =25℃ Ta =100℃ Rever se Characteristics Ta=25℃ Ta=100℃ REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) Power D erating Curve POWER DISSIPATION PD (mW) AMBIENT TEM PERATURE Ta ( )℃ Ta=25℃ f=1MHz Capacit ance Characteristics REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TERMINALS CT (pF) Typical Characteristics www.cj-elec.com 2 F,Mar,2015
www.cj-elec.com 3 F,Mar,2015
www.cj-elec.com 4 F,Mar,2015