DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes RB551V -30 Schottky Barrier Diode FEA TURES z Low current rectifier schottky diode z Low voltage, low induct ance z For power supply MAKING: D Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter S ymbol Limit Unit Peak reverse volt age VRM 30 V DC reverse voltage VR 30 V Mean rectifying current IO 0.5 A Non-repetitive Peak Forward S urge Current@t=8.3ms IFSM 2 A Junction temperature Tj 125 ℃ Storage temperature Tstg -55~+150 ℃ Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit Conditions Forward volt age VF 0.36
0.47 V IF=100mA
IF=500mA Reverse current IR 100 μA V R=20V SOD-323 Power dissipation Pd 200 mW Thermal resistance junction to ambient RθJA 500 ℃/W www.cj-elec.com 1 E,Aug,2015 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device.
0.1 100 0 5 10 15 20 25 30 0.1 100 1000 0 25 50 75 100 125 100 150 200 250 Ta=25℃ f=1MHz Capacitance Characteristics REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TERMINALS CT (pF) Forward Characteristics Ta=100 o C Ta=25 o C FORWARD CURRENT IF (mA) FORWARD VOLTAGE VF (V) 500 Reverse Characteristics Ta=100 o C Ta=25 o C REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) AMBIENT TEMPERATURE Ta ( )℃ POWER DISSIPATION PD (mW) Power Derating Curve Typical Characteristics www.cj-elec.com 2 E,Aug,2015
www.cj-elec.com 3 E,Aug,2015
www.cj-elec.com 4 E,Aug,2015