RB520S-30 TEL | Alldatasheet
Document overview
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Technical content
RB520S-30 Schottky barrier Diodes
FEATURES
z Small surface mounting type z Low reverse current and low forward voltage z High reliability Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃ Parameter Symbol Limits Unit DC reverse voltage VR 30 V Mean rectifying current IO 200 mA Peak forward surge current IFSM 1 A Junction temperature Tj 125 ℃ Storage temperature Tstg -45~+125 ℃ Electrical Ratings @TA=25℃ Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.6 V I F=200mA Reverse current IR 1.0 µA V R=10V
Typical Characteristics RB520S-30