RB520S-30 HOTTECH | Alldatasheet
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Technical content
Page:P2-P1 Plastic-Encapsulate Diodes Schottky barrier diode FE A TURES Small surface mounting type Low reverse current and low forward voltage High reliability MARKING: B Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Symbol Limits Unit DC reverse voltage VR 30 V Mean rectifying current IO 200 mA Peak forward surge current IFSM 1 A Junction temperature Tj 125 ℃ Storage temperature Tstg -40-125 ℃ ELE CTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.6 V IF=200mA Reverse current IR 1 μ A VR=10V SOD-523 RB520S-30 GUANGDONG HOT TECH INDUSTRIAL CO .,LTD
Page:P2-P2 Plastic-Encapsulate Diodes Typical Characteristics RB520S-30 GUANGDONG HOT TECH INDUSTRIAL CO .,LTD