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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., L TD SOD-323 Plastic-Encapsulate Diodes RB500V-40 Schottky Barrier Diode
FEATURES
z Low voltage, low inductance z For power supply MAKING: 2 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A Non-repetitive Peak Forward Surge Current@t=8.3ms IFSM 1 A Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit Conditions Forward voltage VF 0.45 V IF=10mA Reverse current IR 1 μA V R=10V Capacitance bet ween terminals CT 6 pF VR=10V, f=1MHZ SOD-323 Junction temperature Tj 125 ℃ Storage temperature Tstg -55~+150 ℃ Power diss ipation PD 200 mW Thermal Resistance Junction to Ambient RθJA 500 ℃/W www.cj-elec.com 1 E,Mar,2015 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device.
0.0 0.2 0.4 0.6 0.01 0.1 100 0 8 16 24 32 40 0.01 0.1 100 048 1 2 16 Forw ard Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION PD (mW) AMBIENT TE MPERATURE Ta ( )℃ Ta =100℃ Ta =25℃ FORWARD CURRENT IF (mA) FORWARD VO LTAGE VF (V) Pulsed Pulsed Ta=100℃ Ta=25℃ REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TE RMINALS CT (pF) Ta=25℃ f=1MHz Capaci tance Characteristics REVERSE VOLTAGE VR (V) Typical Characteristics www.cj-elec.com 2 E,Mar,2015
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www.cj-elec.com 4 E,Mar,2015