RB495D TEL | Alldatasheet
Document overview
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Technical content
1.9 2. 80¡ À 0. 05 1. 60¡ À0. 05 0.35 2.92¡À0.05 0.95¡À0.025 1.02 RB495D Schottky barrier Diodes
FEATURES
z Small surface mounting type z Low reverse current and low forward voltage z High reliability M a r k i n g : D 3 Q Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃ Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 25 V Mean rectifying current IO 400 mA Peak forward surge current IFSM 2 A Junction temperature Tj -40~+125 ℃ Storage temperature Tstg -30~+85 ℃ Electrical Ratings @T A=25℃ Parameter Symbol Min. Typ. Max. Unit Conditions VF1 0.3 V I F=10mA Forward voltage VF2 0.5 V I F=200mA Reverse current IR 50 µA VR=25V SOT-23-3L