RB481K HTSEMI | Alldatasheet
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FEATURES
z Low current rectification z High reliability MARKING: 3U Maximum Ratings and Electrical Characteristics, Single Diode @T A =25℃ Parameter Symbol Limits Unit Peak reverse voltage V RM 30 V DC reverse V R 30 V Peak forward surge current I FSM 1 A Mean rectifying current I O 0.2 A Junction temperature T j 125 ℃ Storage temperature T stg -40~+125 ℃ Electrical Ratings @T A =25℃ Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V F 0.28 0.33 0.43 0.5 V I F =1mA I F =10mA I F =100mA I F =200mA Reverse current I R 30 μA V R =10V Typical Characteristics RB481K www.htsemi.comsemiconductor JinYu Date:2011/ 05 SCHOTTLKY BARRIER DIODE SOT-353