RB480V JIANGSU | Alldatasheet
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Technical content
TRONICS TECHNOLOGY CO., LTD SOT-553 Plastic-Encap sulate Diodes RB480V SCHOTTLKY BARRIER DIODE
FEATURES
z Low current rectification z High reliability MARKING: 3T Maximum Ratings and Electrical Characteristics, Single D iode @Ta=25℃ Parameter Symbol Limit Unit Peak rev erse voltage VRM 45 V DC reve rse VR 40 V Non-repetitive Peak For ward Surge Current@t=8.3ms IFSM 1 A Mean rectifying current IO 0.1 A Electrical Rating s @Ta=25℃ Parameter Sy mbol Min Typ Max Unit Conditions Forwa rd voltage VF 450 600 mV IF=10mA IF=100mA Reve rse current IR µA V R=10V VR=40V Capacitan ce between terminals CT pF VR=0V VR=10V,f= 1MHz SOT-553 1 2 Junction te mperature Tj 125 ℃ Sto rage temperature Tstg -55~+150 ℃ Power Dissipation PD 150 mW Thermal Resi stance Junction to Ambient RθJA 667 ℃/W 1 F,Dec,2015www.cj-elec.com Solid dot = Pin1 indicate. 3T3T Solid dot = Green molding compound device,if none, the normal device.
0.1 100 01 0 2 0 3 0 0.01 0.1 100 Ta=25℃ f=1M Hz Cap acitance Characteristics Per Diode CAPACITANCE BETWEEN T ERMINALS CT (pF) REVERSE VOLTAG E VR (V) Pow er Derating Curve POWER DISSIPATIO N PD (mW) AMBIENT T EMPERATURE Ta ( )℃ For ward Characteristics FORW ARD VOLTAGE VF (V) FORWARD CURRENT IF (mA) Ta=2 Ta=100 ℃ Rev erse Characteristics REVERSE VOLTAG E VR (V) REVERSE CURRENT IR (uA) Ta=25 ℃ Ta=100 ℃ Typical Characteristics www.cj-elec.com 2 F,Dec,2015
Min. Max . Min. Max. A 0.525 0.600 0.021 0.024 A1 0.000 0.050 0.000 0.002 e 0.450 0.550 0.018 0.022 c 0.090 0.160 0.004 0.006 D 1.500 1.700 0.059 0.067 b 0.170 0.270 0.007 0.011 E1 1.100 1.300 0.043 0.051 E 1.500 1.700 0.059 0.067 L 0.100 0.300 0.004 0.012 θ 7° REF. 7° REF. Symbol Dimensions In Millimeters Dimensions In Inches SOT-553 Suggested Pad Lay out www.cj-elec.com 3 F,Dec,2015
www.cj-elec.com 4 F,Dec,2015