RB461F HTSEMI | Alldatasheet
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z For switching power supply z Ultra low V F .(V F =0.45V Typ. at 0.7A) z I F =0.7A guaranteed despite the size. MARKING: 3B· Maximum Ratings @T A =25℃ Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage V RM 25 V DC Blocking Voltage V R 20 V Average Rectified Output Current I O 700 mA Power Dissipation P D 150 mW Junction temperature T J 125 ℃ Storage temperature range T STG -40 to+125 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V (BR) I R = 200 μA 20 V Reverse voltage leakage current I R V R =20V 200 μA Forward voltage V F I F =700mA 0.49 V SOT-323 ANODE 2. N,C 3. CATHODE R B 4 6 1 F Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu