RB420D TEL | Alldatasheet
Document overview
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Technical content
1.9 2. 80¡ À 0. 05 1. 60¡ À0. 05 0.35 2.92¡À0.05 0.95¡À0.025 1.02 RB420D Schottky barrier Diodes
FEATURES
z Small surface mounting type z Low reverse current and low forward voltage z High reliability Marking: D3B Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Mean rectifying current IO 100 mA Peak forward surge current IFSM 1 A Junction temperature Tj 125 ℃ Storage temperature Tstg -40~+125 ℃ Electrical Ratings @T A=25℃ Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.45 V I F=10mA Reverse current IR 1 µA VR=10V Capacitance between terminals CT 6 pF V R=10V, f=1MHZ SOT-23-3L