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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes RB400D SCHOTTKY BARRIER DIODE

FEATURES

z Small surface mounting type z Low reverse current and low forward voltage z High reliability MARKING: D3A Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Peak reve rse voltage VRM 40 V DC rever se VR 40 V Non-repetitive Peak For ward Surge Current @t=8.3ms IFSM 3 A Mean rectifyi ng current IO 0.5 A Power d issipation PD 250 mW Thermal r esistance from junction to ambient RθJA 400 ℃/W Junction tem perature Tj 125 ℃ Storag e temperature Tstg -55~+150 ℃ Electrical Ratings (Ta=25℃ unless otherwise specified) Parameter Symbol Min Typ Max Unit Conditions Revers e breakdown voltage VR 40 V IR=100μA Forward voltage VF 0.55 V IF=0.5A IR1 50 μA V R=30V Revers e current IR2 30 μA V R=10V CT1 125 pF VR=0V,f=1MHz Capacitan ce between terminals CT2 20 pF VR=10V,f=1MH z SOT-23 1 D,Oct,2015www.cj-elec.com Solid dot = Green molding compound device,if none, the normal device.

0.01 0.1 100 1000 0 5 10 15 20 25 30 35 0.1 100 1000 02 5 5 0 7 5 100 125 100 150 200 250 0 5 10 15 20 25 100 Forw ard Characteristics FORWARD CURRENT IF (mA) FORWARD VO LTAGE VF (mV) Ta=25℃ Ta=100℃ Ta=100℃ Ta=25℃ Reve rse Characteristics REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) POWER DISSIPATION PD (mW) AMBIENT TE MPERATURE Ta ( )℃ Powe r Derating Curve CAPACITANCE BETWEEN TE RMINALS CT (pF) REVERSE VOLTAGE VR (V) Capaci tance Characteristics Ta=25℃ f=1MHz Typical Characteristics www.cj-elec.com 2 D,Oct,2015

A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com D,Oct,2015

www.cj-elec.com 4 A,Jun,2014www.cj-elec.com D,Oct,2015