R972 HAMAMATSU | Alldatasheet
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Parameter Description/Value Unit Spectral Response Wavelength of Maximum Response Photocathode Window Material Dynode Base Suitable Socket nm nm mm dia. 115 to 200 140 Cs-I MgF Linear focused 12 pin base JEDEC No. B12-43 E678-12A Material Minimum Useful Size Structure Number of Stages PHOTOMULTIPLIER TUBE R972 MAXIMUM RATINGS (Absolute Maximum Values) Supply Voltage: 2000 V dc, K: Cathode, Dy: Dynode, P: Anode For VUV Detection, 19 mm (3/4 Inch) Diameter, 10-stage, Head-On Type, Solar Blind Response (115 nm to 200nm) CHARACTERISTICS (at 25 °C) VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Parameter Min. Unit Parameter Value Unit Supply Voltage Average Anode Current Ambient Temperature 2250 250 0.01 -80 to +50 V dc V dc mA Between Anode and Cathode Between Anode and Last Dynode Cathode Sensitivity Anode Sensitivity Gain Anode Dark Current (after 30 min. storage in darkness) Time Response Electrodes Ratio K Dy1 1.5 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 111 Dy10 P Radiant at 122 nm Quantum Efficiency at 130 nm Radiant at 122 nm Anode Pulse Rise Time Electron Transit Time 2.0 × 10 1.3 1.2 × 10 1.0 × 105 0.03 1.6 mA/W A/W nA ns ns 0.05 Typ. Max. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2000 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Figure 1: Typical Spectral Response TPMH1211E02 NOV. 2000 IP TPMHB0613EA Figure 2: Typical Gain Characteristics TPMHB0514EA Figure 3: Dimensional Outline and Basing Diagram (Unit: mm) TPMHA0208EA TACCA0009EB Socket (Option) (E678-12A) 500 700 1000 1500 2000 3000 101 103 104 106 100 SUPPLY VOLTAGE (V) GAIN 102 105 HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it HOMEPAGE URL http://www.hamamatsu.com DY1 DY3 DY5 DY7 DY9 P 6 7 DY10 DY8 DY6 DY4 DY2 K DY3 DY5 DY7 DY9 DY10 P DY4 DY2 K DY11 6 9 7 8 DY8 DY6 BBottom View ATemporary Base Removed 19 ± 1 13 MIN.FACEPLATE PHOTOCATHODE SEMI-FLEXIBLE LEADS 13 MAX. 88 ± 245 MIN.
12 PIN BASE
No. B12-43 37.3 ± 0.5 A B 2- 3.2 80 100 120 140 160 180 200 220 WAVELENGTH (nm) 0.01 0.1 100 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY