R8520-00-C12 HAMAMATSU | Alldatasheet
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. MAXIMUM RATINGS (Absolute Maximum Values)
FEATURES
I 6 (X) + 6 (Y) Cross Plate Anode I Flangeless Type I High Speed Response
APPLICATIONS
I PET (Positron Emission Tomography) I Compact Gamma Camera I Scintillation Mammography POSITION SENSITIVE PHOTOMULTIPLIER TUBES R8520-00-C12, R8520U-00-C12 210.5 1.5 1 1 1 1 K Dy2 Dy1G Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 P Supply Voltage: 800 V, K: Cathode, G: Grid, Dy: Dynode, P: Anode VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Electrodes Ratio 1 1 1 1 0.5 NOTE: Anode characteristics are measured with the voltage distribution ratio shown below. CHARACTERISTICS (at 25 °C) Parameter Cathode Sensitivity Anode Sensitivity Gain Anode Dark Current in Total of Anodes (after 30 min storage in darkness) Time Response 0.9 × 10 2.4 11.5 1.0 µA/lm A/lm nA ns ns ns Luminous (2856 K) Quantum Efficiency at 420 nm Blue Sensitivity Index (CS 5-58) Luminous (2856 K) Anode Pulse Rise Time Electron Transit Time Transit Time Spread (FWHM) Typ. Min. Max. Unit Parameter Supply Voltage Average Anode Current in Total 1000 0.1 V mA Between Anode and Cathode Value Unit GENERAL Parameter Spectral Response Wavelength of Maximum Response Photocathode Window Material Dynode Anode Weight Suitable Socket Operating Ambient Temperature Storage Temperature 300 to 650 420 Bialkali 22 × 22 Borosilicate glass Metal channel dynode 6 (X) + 6 (Y) Cross plate anode Approx. 28 (U Type: Approx. 38) E678-32B (sold separately) -80 to +50 (U Type: -30 to +50) -80 to +50 (U Type: -30 to +50) nm nm mm g Material Minimum Effective Area Structure Number of Stages Description Unit
Figure 6: Circuit Diagram Example and Positioning Histogram TPMHC0205EA Positioning histogram of a 10 × 10 ar- ray of 2.0 mm × 2.0 mm × 20 mm GSO elements for 511 keV γ-rays. (crystal pitch is 2.2 mm) Xa Xb Yc Yd Sum EVENT SIGNAL X ADDRESS Y ADDRESS PX6 PX5 PX4 PX1 PY6 PY3 PY2 PY1 10 × 10 GSO ARRAY R8520-00-C12 PX3 PX2 A/D A/D A/D A/DINTEGRATION INTEGRATION INTEGRATION INTEGRATION TIMING PICK-OFF and ENERGY WINDOW PY5 PY4 Xa Xa + Xb Yc Yc + Yd Figure 7: R8520-00-C12 Dimensional Outline and Basing Diagram (Unit: mm) Figure 8: R8520U-00-C12 Dimensional Outline and Basing Diagram (Unit: mm) (R8520-00-C12 with an Insulation Cover) TPMHA0483EA TPMHA0484EC Basing Diagram Anode Pattern (Top View) Basing Diagram Bottom View PX-ANODE PY-ANODE 2.28 2.28 PX2 PX4 PX3 PX5 PX6 PX1 2.5 0.5 3.5 3.5 2.5 2.632.28 2.50.5 3.53.5 2.5 PY2 PY3 PY4 PY5 PY6PY1 12 3456789 17181920212223 3433 2425 PY6 PY5 PY4 PY3 PY2 PX6 PX5 PX4 PY1 PX3 PX2 PX1 Dy11Dy9Dy7Dy5Dy3Dy1G K Dy2 Dy4 Dy6 Dy10 Dy8 K Dy P G : Photocathode : Dynode (Dy1-Dy11) : Anode (PX1-PX6) (PY1-PY6) : Grid 25.7 ± 0.5 5 MAX. 25- 0.45 Side ViewTop View 1.2 MAX. 5 MAX.
2.54 PITCH
34- 1.5 4-R3.5 Bottom View 45° ± 10° GUIDE MARK PHOTOCATHODE EFFECTIVE AREA Basing Diagram GUIDE CORNER 12 3456789 171819202122232425 PY6 PY5 PY4 PY3 PY2 PX6 PX5 PX4 PY1 PX3 PX2 PX1 Dy11Dy9Dy7Dy5Dy3Dy1G K Dy2 Dy4 Dy6 Dy10 Dy830 ± 0.5 22 MIN. 0.6 ± 0.4 12.0 ± 0.5 PHOTOCATHODE INSULATION COVER 25- 0.45 Side View Bottom ViewTop View EFFECTIVE AREA 25.7 ± 0.5 4 MAX. Basing Diagram Bottom View K Dy P G : Photocathode : Dynode (Dy1-Dy11) : Anode (PX1-PX6) (PY1-PY6) : Grid
POSITION SENSITIVE PHOTOMULTIPLIER TUBES R8520-00-C12, R8520U-00-C12 HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvä gen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it WEB SITE http://www.hamamatsu.com TPMH1276E02 NOV. 2004 IP [ACCESSORIES] (Unit: mm) G Socket E678-32B G D Type Socket Assembly E7514 TACCA0094ED SOLD SEPARATELY SOLD SEPARATELY 22.86 20.32 20.32 22.86 12.7 12.7 2.924.45 1.57 0.51 2.54 TACCA0236EB * PATENT: USA: 5410211 and other(9), GBR: 551767 and other(9), DEU: 69209809 and other(9), FRA: 551767 and other(9), JPN: 3078905 and other(9) 25.4 ± 0.5 PIN No. 1 25.4 ± 0.5 K G : 110 kΩ : 330 kΩ : 220 kΩ : 1 MΩ : 51 Ω : 10 nF R1, R14 R3 to R13 R15 R16 to R18 C1 to C3 PX4 PY4 PX3 PY3 PX2 PY2 PX1 PY1 PX4 PY4 PX3 PY3 PX2 PY2 PX1 PY1 DY11 DY10 DY9 DY8 DY7 DY6 DY5 DY4 DY3 DY2 DY1 R11 R10 R14 R13 R12 R18 R17 R16 R15 R1 15.0 ± 0.5450 POM HOUSING GUIDE MARK POTTING COMPOUND -H.V : RG-174/U (RED) PY3 PY2 PY4 PY5 PY6 PX3 PX4 PX1 PX2 PY1 PX6 PX5 PX6 PY6 PX5 PY5 PX6 PY6 PX5 PY5 SIGNAL GND -H.V : RG-174/U (RED) POWER SUPPLY GND SIGNAL OUTPUT : 0.8D-QEV (GRAY) WARNING ~ High Voltage ~ The product is operated at high voltage potential. Further, the metal housing of the product is connected to the photocathode (potential) so that it becomes a high voltage potential when the product is operated at a negative high voltage (anode grounded). Accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or the damage to the other instruments.