R8486 HAMAMATSU | Alldatasheet
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Technical content
FEATURES
Sensitivity in the Vacuum Ultraviolet Region High Quantum Efficiency (at 121.6 nm) High Anode Sensitivity 5 A/W (Typ.) Parameter R8486 Unit Spectral Response Wavelength of Maximum Response Photocathode Material Window Material Minimum Effective Area Dynode Direct Interelectrode Capacitances Base Weight Suitable Socket for Base (option) nm nm mm pF pF g 115 to 320 200 Cs-Te R8487 115 to 195 130 Cs-I MgF 8 × 12 Circular-cage Sb-Cs Approx. 4 Approx. 6 11-pin base JEDEC No. B11-88 E678-11A Structure Number of Stage Material Anode to Dynode No.9 Anode to All Other Electrodes PHOTOMULTIPLIER TUBES R8486, R8487 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 2001 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. For Vacuum Ultraviolet Light Detection Cs-Te (R8486), Cs-I (R8487) Photocathode, MgF2 Window, 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type
APPLICATIONS
Emission Spectroscopy, etc. Figure 1: Typical Spectral Response TPMSB0199EA PMSF0093 PRELIMINARY DATA FEB. 2001 100 0.1 0.01 100 PHOTOCATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) WAVELENGTH (nm) 300 200 CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY R8486 R8487
PHOTOMULTIPLIER TUBES R8486, R8487 MAXIMUM RATINGS (Absolute Maximum Values) NOTES CHARACTERISTICS (at 25 °C) Parameter Parameter R8487R8486 Unit Rating Unit V dc V dc V dc V dc V dc 1250 250 250 250 0.1 -30 to +50 22.5 25.0 5.2 × 10 1.0 × 107 1.0 1.09 × 10-16 2.2 1.2 26.0 1.0 × 105 3.9 × 106 0.1 1.12 × 10-16 2.2 1.2 A/W A/W nA W W ns ns ns Supply Voltage Between Anode and Cathode Between Anode and Last Dynode Between Successive Dynodes Between First Dynode and Cathode Average Anode Current A Ambient Temperature Cathode Sensitivity Quantum Efficiency at 121 nm at 254 nm Anode Sensitivity B Radiant at 121 nm at 254 nm Gain Anode Dark Current (After 30 minute storage in darkness) C ENI (Equivalent Noise Input) D at 121 nm at 254 nm Time Response Anode Pulse Rise Time E Electron Transit Time F Transit Time Spread G A: Averaged over any interval of 30 seconds maximum. B: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1: Voltage Distribution Ratio C: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. D: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of uni- ty in the output of a photomultiplier tube. ENI = /CR /CR /CR /CR /CR E: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse./CR F: The electron transit time is the interval between the arrival of delta func- tion light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. G: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. Electrode Distribution Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P 1111111111 Supply Voltage=1000 V dc K: Cathode Dy: Dynode P: Anode s 2q·ldb·G·Δf Electronic charge (1.60 × 10-19 coulomb). Anode dark current(after 30 minutes storage) in amperes. Gain. Bandwidth of the system in hertz. 1 hertz is used. Anode radiant sensitivity in amperes per watt at the wavelength of peak response. where q = ldb = G = Δf = S =
Figure 2: Typical Gain and Anode Radiant Sensitivity TPMSB0200EA Figure 3: Typical Time Response TPMSB0004EB Figure 4: Dimensional Outline and Basing Diagram (Unit: mm) TPMSA0042EA Figure 5: Socket E678-11A (Option) (Unit: mm) TACCA0064EA 300 500 700 1000 1500 SUPPLY VOLTAGE (V) TIME (ns) 100 RISE TIME TRANSIT TIME 3.5 418 NOTE: There is a 2 mm diameter hole to exhaust inner air on the plastic base. 5 76 KDY1 DY2 DY3 DY4 DY5 DY6 DY7 DY8 DY9 P DIRECTION OF LIGHT 28.5 ± 1.5 8 MIN. 12 MIN. 49.0 ± 2.5 80 MAX. 94 MAX. 32.2 ± 0.5
11 PIN BASE
JEDEC No. B11-88 20 MAX. FACE PLATE 20 MAX. MgF 2 WINDOW PHOTO- CATHODE SUPPLY VOLTAGE (V) ANODE RADIANT SENSITIVITY (A/W) GAIN 102 106 105 104 103 102 103 104 105 106 107 108 107 108 500 700 1000 1500 R8487 TYPICAL GAIN R8486 TYPICAL GAIN R8487 TYPICAL ANODE SENSITIVITY (at 121.6 nm) R8486 TYPICAL ANODE SENSITIVITY (at 254 nm)
FEB. 2001 IP Printed in Japan (1,000) PHOTOMULTIPLIER TUBES R8486, R8487 HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it HOMEPAGE URL http://www.hamamatsu.com Warning— Personal Safety Hazards Electrical Shock—Operating voltages applies to this device present a shock hazard.