R821 HAMAMATSU | Alldatasheet
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Parameter Description/Value Unit Spectral Response Wavelength of Maximum Response Photocathode Window Material Dynode Base Suitable Socket nm nm mm dia. 160 to 320 240 Cs-Te Fused silica Linear focused 12-pin glass base E678-12L (supplied) Material Minimum Effective Area Structure Number of Stages PHOTOMULTIPLIER TUBE R821 MAXIMUM RATINGS (Absolute Maximum Values) Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1998 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Supply Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: Anode For Astro-physics and Other Ultraviolet Radiation Detection Solar Blind Response (160nm to 320nm), Cs-Te Photocathode 19mm (3/4 Inch) Diameter, 10-stage, Head-On CHARACTERISTICS (at 25 °C) VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Parameter Min. Unit Parameter Value Unit Supply Voltage Average Anode Current Ambient Temperature 1250 250 0.01 -80 to +50 Vdc Vdc mA Between Anode and Cathode Between Anode and Last Dynode Cathode Sensitivity Anode Sensitivity Gain Anode Dark Current (after 30min. storage in darkness) Time Response Electrodes Ratio K Dy1 1.5 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 111 Dy10 P Radiant at 254nm Radiant at 254nm Anode Pulse Rise Time Electron Transit Time 4 × 10 1.0 × 10 3.6 × 105 0.3 2.5 mA/W A/W nA ns ns 0.5 Typ. Max. NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
Figure 1: Typical Spectral Response TPMH1210E01 JUL. 1998 HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 TPMHB0511EA Figure 2: Typical Gain Characteristics TPMHB0512EA Figure 3: Dimensional Outline and Basing Diagram (Unit: mm) TPMHA0432EB TACCA0047EA Socket (Supplied) (E678-12L) 100 0.1 0.01 100 200150 250 300 350 400 WAVELENGTH (nm) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY 500 600 700 800 1000 1500 108 101 103 104 106 107 SUPPLY VOLTAGE (V) GAIN 102 105 DY3 DY5 DY7 DY9 P SHORT PIN 6 7 DY10 DY8 DY6 DY4 DY2 K DY1 19 ± 1 FACEPLATE PHOTOCATHODE 88 ± 213MAX.
12 PIN BASE
15MIN. 3.7 (23.6) 28.6 6.7 360 13 9.5 3.3 10.5(8) 2-R4 2- 3.2