R7639 HAMAMATSU | Alldatasheet
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Spectral Response 115 to 230 nm Wavelength of Maximum Response 155 nm Photocathode Material Diamond — Minimum Effective Area 3 × 12 mm Window Material MgF 2 — Dynode Secondary Emitting Surface Sb-Cs — Structure Circular-cage — Number of Stages 9 — Direct Interelectrode Capacitances Anode to Last Dynode 4 pF Anode to All Other Electrodes 6 pF Base 11-pin base JEDEC No.B11-88 Weight 45 g Suitable Socket E678-11A(option) — Figure 1: Typical Spectral Response Description/Value Quantum Efficiency: 40 % at 155 nm High Sensitivity Solar Blind Photocathode (115 nm to 230 nm) 28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
FEATURES
Anode Sensitivity (at 1000 V) 5 A/W Typ.
APPLICATIONS
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2000 Hamamatsu Photonics K.K Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. PRELIMINARY DATA JUN. 2000 WAVELENGTH (nm) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 100 200 220 240120 140 160 180 260 280 300 0.1 100 CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY
PHOTOMULTIPLIER TUBE R7639 : The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measure- ment, the whole photocathode is illuminated. : Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of elec- tron transit times. : Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = (1) Light Hysteresis The tube is operated at 750 volts with an anode current of 1 micro-am- pere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2) Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro- ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the sup- ply voltage is then reduced to the previous value and the tube is re- illuminated for a minute to measure the variation. TPMSB0002EA Supply Voltage Between Anode and Cathode V dc Between Anode and Last Dynode V dc Between Successive Dynodes V dc Between First Dynode and Cathode V dc Average Anode Current mA Ambient Temperature °C MAXIMUM RATINGS (Absolute Maximum Values) 1250 250 250 250 0.1 -30 to +50 Parameter Rating Unit CHARACTERISTICS (at 25 °C) Cathode sensitivity Quantum Efficiency at 121.6 nm at 155 nm Radiant at 121.6 nm at 155 nm Parameter Max.Typ.Min. Unit mA/W mA/W Anode Sensitivity Radiant at 155 nm 1.0 × 104 1.5 × 105 — A/W Time Response Anode Pulse Rise Time Electron Transit Time Transit Time Spread (TTS) 2.2 1.2 Anode Current Stability Light Hysteresis Voltage Hysteresis 0.1 1.0 Gain — 3.0 × 10 6 — W— 1.46 × 10-16 —ENI (Equivalent Noise Input) Anode Dark Current (After 30 minutes storage in the darkness) ns ns ns — 0.5 5 nA li × 100 (%)lmax — lmin. NOTES : Averaged over any interval of 30 seconds maximum. : Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1: Voltage Distribution Ratio : Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. : ENI is an indication of the photon-limited signal-to-noise ratio. It re- fers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where q = Electronic charge (1.60 × 10 -19 coulomb). ldb = Anode dark current(after 30 minutes storage) in am- peres. G = Gain. Δf = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. : The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. 2q·ldb·G·Δf S Electrode Distribution Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P 1111111111 Supply Voltage=1000 V dc K: Cathode Dy: Dynode P: Anode TIME max.l min.lil ANODE CURRENT 0 5 6 7 (minutes)
SUPPLY VOLTAGE (V) ANODE RADIANT SENSITIVITY (A/IW) at 155mm GAIN 102 106 105 104 103 102 103 104 105 106 107 108 107 108 500 700 1000 1500 TYPICAL GAIN TYPICAL ANODE SENSITIVITY MINIMUM ANODE SENSITIVITY Figure 2:Typical Gain and Anode Radiant SensitivityFigure 3:Typical Time Response TPMSB0173EB TPMSB0004EB 300 500 700 1000 1500 SUPPLY VOLTAGE (V) TIME (ns) 100 RISE TIME TRANSIT TIME 5 76 KDY1 DY2 DY3 DY4 DY5 DY6 DY7 DY8 DY9 P DIRECTION OF LIGHT 28.5 – 1.5 3 MIN. 12 MIN. 49.0 – 2.5 80 MAX. 94 MAX. 32.2 – 0.5
11 PIN BASE
JEDEC No. B11-88 20 MAX. FACE PLATE 20 MAX. MgF 2 WINDOW PHOTO- CATHODE Figure 4:Dimensional Outline and Basing Diagram (Unit: mm)Figure 5:Socket E678-11A (Option) (Unit: mm) TPMSA0040EA TACCA0064EA 3.5 418 NOTE: There is a 2 mm diameter hole to exhaust inner air on the plastic base.
PHOTOMULTIPLIER TUBE R7639 TPMS1058E03 JUN. 2000 IP Printed in Japan (1,000) Warning—Personal Safety Hazards Electrical Shock—Operating voltages applies to this device present a shock hazard. HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it HOMEPAGE URL http://www.hamamatsu.com