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For UV Range, 13 mm (1/2 Inch) Diameter, Head-on, 10-Stage, Cs-Te Photocathode CHARACTERISTICS (at 25 °C) Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. GENERAL MAXIMUM RATINGS (Absolute Maximum Values) PHOTOMULTIPLIER TUBE R759 Parameter Min. Unit Cathode Sensitivity at 254 nm Anode Radiant Sensitivity at 254 nm Gain Anode Dark Current (after 30 min. storage in darkness) Time Response Anode Pulse Rise Time Electron Transit Time 4.0 × 10 1.4 × 10 5.0 × 105 0.3 2.5 mA/W A/W nA ns ns Typ. Max. Parameter Unit Spectral Response* Wavelength of Maximum Response Wavelength of Maximum Quantum Efficiency Photocathode Window Material Dynode Direct Interelectrode Capacitance Operating Ambient Temperature Storage Temperature Base Suitable Socket MateriaI Minimum Effective Area Structure Number of Stages Anode to Last Dynode Anode to All Other Electrodes 160 to 320 240 200 Cs-Te Synthetic silica glass Linear focused 1.0 2.0 -30 to +50 -80 to +50 13-pin glass base E678-13F (supplied) nm nm nm mm pF pF Description / Value Parameter Unit Supply Voltage Average Anode Current Between Anode and Cathode Between Anode and Last Dynode 1250 250 0.01 V V mA Value Supply Voltage: 1000 Vdc, K: Cathode, Dy: Dynode, P: Anode VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Electrodes Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P 111 * Operate in a nitrogen-purged environment for VUV detection.
DEC. 2010 IP Figure 1: Typical Spectral Response TPMHB0396EA Figure 2: Typical Gain Characteristics TPMHB0517EA Figure 3: Dimensional Outline and Basing Diagram (Unit: mm) TPMHA0014EA TACCA0005EA Socket E678-13F (Supplied) WAVELENGTH (nm) 100 0.1 0.01 100 150 200 250 300 350 400 450 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) QUANTUM EFFICIENCY CATHODE RADIANT SENSITIVITY 500 600 700 800 1000 1200 1400 103 105 106 107 102 SUPPLY VOLTAGE (V) GAIN 104 6 7 8 DY1 DY3 DY5 DY7 P DY9 DY10 DY8 DY6 DY4 DY2 IC K SHORT PIN 13.5 ± 0.5 10 MIN.FACEPLATE PHOTOCATHODE 71 ± 213 MAX.
13 PIN BASE
2- 2.2 3.4 10 PHOTOMULTIPLIER TUBE R759 HAMAMATSU PHOTONICS K.K. HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvä gen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it www.hamamatsu.com