R7446 HAMAMATSU | Alldatasheet

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High Cathode Sensitivity with Low Noise Photocathode PHOTOMULTlPLlER TUBES R7446 R7446P (For Photon Counting)

APPLICATIONS

Atomic Emission Spectrometer Atomic Absorption Spectrometer Figure 1: Typical Spectral Response TPMSB0193EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©1999 Hamamatsu Photonics K.K Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.

FEATURES

Anode Sensitivity (at 1000V) 160 to 680 nm 0.1 nA 60 µ A/lm 60 mA/W

400 A/lm

4.0 × 105 A/W GENERAL Parameter Description/VaiueUnit Spectral Response Wavelength of Maximum Response 160 to 680 nm nm Photocathode MateriaI 400 Structure 4p FAnode to Last Dynode 6p FAnode to All Other Electrodes Minimum Effective Area Low noise bialkali Secondary Emitting Surface Low noise bialkali mm Window Material Weight 8 × 24 g45 Dynode Direct Interelectrode Capacitances Base SuitabIe Socket Assembly Fused Silica Circular-cage Number of Stages 9 11-pin base JEDEC No. B11-88 E717–63 (option) SuitabIe Socket E678–11A (option) 100 0.01 0.1 CATODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 100 200 300 400 500 WAVELENGTH (nm) 600 700 800 CATHODE RADIANT SENCITIVITY QUANTUM EFFICIENCY

PHOTOMULTlPLlER TUBES R7446, R7446P (For Photon Counting) MAXIMUM RATINGS (Absolute Maximum Values) Parameter Value Supply Voltage Between Anode and Cathode Between Anode and Last Dynode 1250 250 0.1 -80 to +50 Vdc Vdc mA Average Anode Current Unit Ambient Temperature CHARACTERISTlCS (at 25 °C) Parameter Min. Typ. Typ. Max. R7446 for General Purpose R7446P for Photon Counting Cathode Sensitivity Anode Dark CurrentE Anode Dark CountsF Anode Sensitivity After 30minute Storage in the darkness 0.1 2.0 Anode Current StabilityL Current Hysteresis Voltage Hysteresis 0.1 1.0 Radiant at 400nm (Peak) 60 BlueC 6.4 Anode Pulse Rise TimeH 2.2 Electron Transit TimeJ 22 Transit Time Spread (TTS)K 1.2 Time ResponseD Quantum Efficiency at 300nm (Peak) GainE ENI(Equivalent Noise Input)G Unit LuminousB Radiant at 400nm 4.0 × 105 LuminousD 400200 3.7 × 10-17 Min. Max. 0.1 0.5 nA 0.1 1.0 60 mA/W 6.4 2.2 1.2 ns ns ns 4.0 × 105 A/W

400 A/lm200

6.7 × 106 6.7 × 106 10 50 cps 3.7 × 10-17 W 40 60 40 60 20 20 % µA/lm µA/lm-b NOTES Averaged over any interval of 30 seconds maximum. The light source is a tungsten filament lamp operated at a distribution tem- perature of 2856K. Supply voltage is 150 volts between the cathode and all other electrodes connected together as anode. The value is cathode output current when a blue filter(Corning CS-5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. Measured with the same light source as Note B and with the anode-to- cathode supply voltage and voltage distribution ratio shown in Table 1 be- low. Measured with the same supply voltage and voltage distribution ratio as Note D after removal of light. Measured at the voltage producing the gain of 1 × 10 ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. where q = Electronic charge (1.60 × 10 -19 coulomb). ldb = Anode dark current(after 30 minute storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wave- length of peak response. The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole pho- tocathode is illuminated. Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. Hysteresis is temporary instability in anode current after light and voltage are applied. ENI = S 2q.ldb.G . f Electrode K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P Distribution Ratio 1 111111111 SuppIy Voltage : 1000Vdc K : Cathode, Dy : Dynode, P : Anode Table 1:Voltage Distribution Ratio Hysteresis = × 100(%) lmax. li lmin. (1)Current Hysteresis The tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro-ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. TPMSB0002EA TIME max.l min.lil ANODE CURRENT 0 5 6 7 (minutes)

OCT. 1999 Figure 8: Dimensional Outline and Basing Diagram(Unit: mm)Figure 10: Socket E678-11A (Option) Figure 9: D Type Socket Assembly E717-63 (Option) Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. TACCA0002EG PHOTOMULTlPLlER TUBES R7446, R7446P (For Photon Counting) TPMSA0001EA BOTTOM VIEW (BASING DIAGRAM) 5 76 KDY1 DY2 DY3 DY4 DY5 DY6 DY7 DY8 DY9 P DIRECTION OF LIGHT 28.5 1.5 8MIN. PHOTOCATHODE 24MIN. 49.0 2.5 80MAX. 94MAX. 11 32.2 0.5

11 PIN BASE

JEDEC No. B11-88 TACCA0064EA 3.5 418 HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 HOMEPAGE URL http://www.hamamatsu.com POTTING COMPOUND R to R10 C1 to C3 : 330 kΩ : 0.01 µF HOUSING (INSULATOR) R10 DY9 DY8 DY7 DY6 DY5 DY4 DY3 DY2 DY1 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) -HV AWG22 (VIOLET) P K POWER SUPPLY GND AWG22 (BLACK) SOCKET PIN No.PMT 3.5 33.0 ± 0.3 49.0 ± 0.3 38.0 ± 0.3 30450 ± 10 31.0 ± 0.5