R7110U-07 HAMAMATSU | Alldatasheet
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Technical content
Parameter Description/Value Unit Spectral Response Wavelength of Maximum Response Photocathode Window Material Target Suitable Socket nm nm mm dia. 160 to 850 420 Multialkali Synthetic Silica 3 mm Single-element Electron Bombarded Si-Avalanche Diode E678-12M (Supplied) Material Minimum Effective Area a COMPACT HYBRID PHOTO-DETECTOR with Si-Avalanche Diode Target R7110U-07 MAXIMUM RATINGS (Absolute Maximum Values) Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 2000 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. CHARACTERISTICS (at 25 °C) Parameter Min. Unit Parameter Value Unit Supply Voltage Avalanche Diode Reverse Bias Voltage Ambient Temperature -8500 155 b -40 to +50 Vdc V Cathode Sensitivity Gain c Time Response c Diode (Target) Luminous (2856K) Radiant at 420 nm Rise Time Fall Time Width Leakage Current d Capacitance d 100 130 4 × 10 1.3 120 µA/lm mA/W ns ns ns nA pF Typ. Max. NOTE: aWithout magnetic fields bat 25 °C /CR cPhotocathode Voltage: - 8 kV, Avalanche Diode Reverse Bias Voltage: approx.145 V dAvalanche Diode Reverse Bias Voltage: approx.145 V
FEATURES
l Operable in high magnetic fields l Low hysteresis
APPLICATIONS
l Other high precision measurements PRELIMINARY DATA SEPT. 2000