R669 HAMAMATSU | Alldatasheet
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Parameter Description/Value Unit Spectral Response Wavelength of Maximum Response Photocathode Window Material Dynode Base Suitable Socket nm nm mm dia. 300 to 900 600 Extended Red Multialkali Borosilicate glass Box and Grid 15-pin glass base E678-15B (supplied) Material Minimum Effective Area Structure Number of Stages PHOTOMULTIPLIER TUBE R669 MAXIMUM RATINGS (Absolute Maximum Values) Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 2001 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office. 51 mm (2 Inch) Diameter, 10-stage, Head-On Type Extended Red Multialkali Photocathode CHARACTERISTICS (at 25 °C) Parameter Min. Unit Parameter Value Unit Supply Voltage Average Anode Current Ambient Temperature 1500 250 0.1 -80 to +50 V dc V dc mA Between Anode and Cathode Between Anode and Last Dynode Cathode Sensitivity Anode Sensitivity Gain Anode Dark Current (after 30 min storage in darkness) Time Response Luminous (2856 K) Radiant at 420 nm Red/White Ratio (R-68) Luminous (2856 K) Radiant at 420 nm Anode Pulse Rise Time Electron Transit Time 140 230 0.35 1.7 × 10 3.3 × 105 9.0 µA/lm mA/W A/lm A/W nA ns ns Typ. Max. NOTE: Anode characteristics are measured with the voltage distribution ratio shown below. Supply Voltage: 1000 V dc, K: Cathode, Dy: Dynode, P: Anode VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Electrodes Ratio K G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P 11111
Figure 1: Typical Spectral Response TPMH1257E02 OCT. 2001 IP TPMHB0341EB Figure 2: Typical Gain Characteristics TPMHB0608EA Figure 3: Dimensional Outline and Basing Diagram (Unit: mm) TPMHA0457EA TACCA0201EA Socket (E678-15B) 500 750 1500 200012501000 102 103 104 105 106 107 108 GAIN SUPPLY VOLTAGE (V) 7 8 9 DY4 DY6 K DY10 IC DY7 DY5 DY3 DY1 DY8 G DY2 P IC DY9 SHORT PIN 51.0 ± 1.5 46MIN.FACEPLATE PHOTO- CATHODE 112 ± 2
15 PIN BASE
13 MAX. 200 300 400 500 600 700 800 900 1000 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) WAVELENGTH (nm) 10-2 10-1 100 102 101 QUANTUM EFFICIENCY CATHODE RADIANT SENSITIVITY HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E -mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it HOMEPAGE URL http://www.hamamatsu.com 11.5