R649 HAMAMATSU | Alldatasheet
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Parameter Description/Value Unit Spectral Response Wavelength of Maximum Response Photocathode Window Material Dynode Base Suitable Socket nm nm mm 300 to 850 420 Multialkali 5 × 8 Borosilicate glass Box and Grid 21-pin glass base E678-21A (supplied) Material Minimum Effective Area Structure Number of Stages PHOTOMULTIPLIER TUBE R649 MAXIMUM RATINGS (Absolute Maximum Values) Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1999 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. For Photon Counting 51 mm (2 Inch) Diameter, 12-Stage, Multialkali Photocathode, Head-On Type CHARACTERISTICS (at 25 °C) Parameter Min. Unit Parameter Value Unit Supply Voltage Average Anode Current Ambient Temperature 1500 250 0.01 -80 to +50 Vdc Vdc mA Between Anode and Cathode Between Anode and Last Dynode Cathode Sensitivity Anode Sensitivity Gain Anode Dark Counts (after 30min. storage in darkness) Time Response Luminous (2856K) Radiant at 420nm Red/White Ratio (R-68) Luminous (2856K) Radiant at 420nm Anode Pulse Rise Time Electron Transit Time 100 120 0.2 800 3.4 × 10 6.7 × 106 200 µA/lm mA/W A/lm A/W cps ns ns 350 Typ. Max. Supply Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: Anode VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Electrodes Ratio K Dy1 G Dy2 Dy3 2.5 Dy4 1.5 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 1111 Dy11 Dy12 P NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
Figure 1: Typical Spectral Response TPMH1256E01 MAR. 1999 TPMHB0530EA Figure 2: Typical Gain Characteristics TPMHB0607EA Figure 3: Dimensional Outline and Basing Diagram (Unit: mm) TPMHA0216EB TACCA0011EA Socket (E678-21A) HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 100 0.1 0.01 200 400 600 800 1000 WAVELENGTH (nm) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY 56.8 136 500 750 1500 200012501000 101 102 103 104 105 106 107 108 109 GAIN SUPPLY VOLTAGE (V) 111213 2021 DY1DY3 DY5 DY2 P DY9 DY11 DY12 IC IC IC DY10 DY8 DY6 DY4 DY7 G IC IC ICK
21 PIN BASE
52.0–1.5 13MAX. 126 –2 5 8