R636-10 HAMAMATSU | Alldatasheet

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UV to Near IR (R636–10:185 to 930 nm, R758–10:160 to 930nm) Spectral Response GENERAL MAXIMUM RATINGS (Absolute Maximum Values) Parameter Parameter Value R636–10 R758–10 Unit Spectral Response 185 to 930 160 to 930 nm Wavelength of Maximum Response 300 to 800 nm Photocathode MateriaI GaAs (Cs) Structure Number of Stages Minimum Effective Area 3 12 mm pF pF Window Material UV glass Fused silica glass Dynode Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Supply Voltage Between Anode and Cathode Between Anode and Last Dynode 1500 Average Anode Current 0.001 250 Unit Vdc Vdc mA Circular–cage 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type R636–10, R758–10 CHARACTERISTlCS (at 25 ) Parameter Max. Typ.Min. Cathode Sensitivity Anode Dark Current at 10A/lm 0.1 nA Luminous(2856K) 400 at 350nm at 632.8nm at 852.1nm Radiant Red/White Ratio (with R–68 filter) 100 0.53

250 A/lmLuminous(2856K)

4.5 10 5 A/W 2.8 10 4 Anode Pulse Rise Time 2 ns Electron Transit Time 550 Time Response Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P Ratio 1 1 1 1 111111 Anode characteristics are measured with the voItage distribution ratio shown below. After 30min. storage in darkness SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode NOTE: Anode Sensitivity Unit A/lm mA/W VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE Gain Base SuitabIe Socket JEDEC No.B11–88 E678–11A(option) ns 2.8 10 4 2.2 10 4 at 350nm at 632.8nm at 852.1nm lnformation furnished by HAMAMATSU is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are subject to change without notice. No patent right are granted to any of the circuits described herein. © 1994 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.

PHOTOMULTlPLlER TUBES R636–10, R758–10 Figure 1: Typical Spectral Response Figure 2: Typical Anode Sensitivity and Typical Gain Figure 3: Dimensional Outline and Basing Diagram (Unit : mm) BOTTOM VIEW (BASING DIAGRAM) Socket (E678 – 11A) TPMSB0069EA TPMSB0070EB 200 400 600 800 1000 0.01 0.1 100 WAVELENGTH(nm) CATHODE RADIANT SENSITIVITY(mA/W) QUANTUM EFFICIENCY(%) CATHODE RADIANT SENSITIVITYQUANTUM EFFICIENCY R758-10 R636-10 R758-10 R636-10 500 700 1000 1500 10-3 10-2 10-1 100 101 102 103 SUPPLY VOLTAGE(V) GAIN ANODE LUMINOUS SENSITIVITY(A/lm) 101 102 103 104 105 106 107 ANODE LUMINOUS SENSITIVITY (TYP.)GAIN (TYP.) TPMSA0027EC TACCA0008EA 5 76 KDY1 DY2 DY3 DY4 DY5 DY6 DY7 DY8 DY9 P DIRECTION OF LIGHT 8MIN. PHOTOCATHODE 12MIN. 80MAX. 94MAX. 49.0 2.5

11 PIN BASE

JEDEC No. B11-88 HA COATING34MAX. 16MIN. 3MIN. 3.5 18 4 TPMS1016E03 JUN. 1994 29.0 1.7 HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741