R632 HAMAMATSU | Alldatasheet
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S-1 Spectral Response(QE 0.05% at 1.06 µm <R632-01>) GENERAL MAXIMUM RATINGS (Absolute Maximum Values) Parameter Parameter Value Description/Value Unit Spectral Response 400 to 1200 nm Wavelength of Maximum Response 800 nm Photocathode MateriaI A g–O–Cs Structure Number of Stages Minimum Effective Area 15 mm dia. Window Material Borosilicate glass Dynode Base SuitabIe Socket Supply Voltage Between Anode and Cathode Between Anode and Last Dynode 1500 250 Average Anode Current Ambient Temperature -80 to +50 0.01 Unit Vdc Vdc mA Linear focused 12–pin glass base E678–12L(supplied) 19mm(3/4 Inch) Diameter, 10–stage, Head–On Type R632, R632- 01 CHARACTERISTlCS (at 25 ) Parameter Max. Typ.Min. Cathode Sensitivity Sensitivity Gain Anode Dark Current(at 4A/lm) 0.05 0.02 0.14 Luminous(2856K) 10 Radiant at 800nm Red/White Ratio R632 R632–01 R632 R632–01 R632 150 R632–01 800 500 2000 (with Toshiba IR–D80A) Quantum Efficiency at 1.06 m Luminous(2856K) 10 0.1 A/lm Radiant at 800nm 950 A/W 51 0 5 Anode Pulse Rise Time 2.2 ns nA nA Electron Transit Time Time Response Electrode K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P Ratio 1.5 1 1 1 1 1 1 1 1 1 1 Anode characteristics are measured with the voItage distribution ratio shown below. SuppIy Voltage : 1250Vdc, K:Cathode, Dy:Dynode, P:Anode NOTE: Anode 1.9 Unit A/lm mA/W VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE ns lnformation furnished by HAMAMATSU is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or commission. Specifications are subjected to change without notice. No patent right are granted to any of the circuits described herein. © 1996 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
PHOTOMULTlPLlER TUBES R632,R632–01 Figure 1: Typical Spectral Response Figure 2: Typical Gain and Anode Dark Current Figure 3: Typical Temperature Characteristics of Dark Current Figure 4: Dimensional Outline and Basing Diagram (Unit : mm) BOTTOM VIEW (BASING DIAGRAM) Socket (E678 – 12L) TPMHB0356EA 200 1000 400 600 0.01 100 0.1 WAVELENGTH (nm) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY R632-01 R632 800 TPMHB0357EA 500 600 700 800 1000 1500 100 101 103 104 106 107 SUPPLY VOLTAGE (V) GAIN 102 105 10-10 10-9 10-7 10-6 10-4 10-3 10-8 10-5 ANODE DARK CURRENT (A) GAIN R632 DARK CURRENT R632-01 DARK CURRENT TPMHB0358EA -40 30 AMBIENT TEMPERATURE ( ° C) ANODE DARK CURRENT (A) 10-12 10-11 10-9 10-8 10-6 10-5 10-10 10-7 -30 -20 -10 0 10 20 TUBE TYPE: R632-01 TPMHA0360EA TACCA0047EA FACEPLATE 18.6 0.7 15MIN. PHOTOCATHODE 13MAX. 88 2
12 PIN BASE
P SHORT PIN 6 7 DY10 DY8 DY6 DY4 DY2 K DY1 360 2– 3.2 3.7 (23.6) 6.7 28.6 9.5 3.3 10.5(8) 2-R4 TPMH1142E01 FEB. 1996 HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741