R6012FNX DOINGTER | Alldatasheet
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(note1) www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=600V,ID=20A,RDS(ON)<0.4Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current- TJ=25℃ 20 A Continuous Drain Current-TJ=100℃ 12.5 EAS Single Pulse Avalanche Energy 1020 mJ IAR 20 A PD Power Dissipation 60 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.08 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62.5 D S G Avalanche Current (note2) R6012FNX All d ata sheet.com
I www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 600 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=600V --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=10A --- --- 0.4 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25v, VGS=0V, f=1MHz --- 3200 --- pF Coss Output Capacitance --- 1150 --- Crss Reverse Transfer Capacitance --- 80 --- Switching Characteristics td(on) Turn-On Delay Time VDS=300v.ID=20A RGEN=25Ω. (Note3,4) --- 62 135 ns tr Rise Time --- 140 290 ns td(off) Turn-Off Delay Time --- 230 470 ns tf Fall Time --- 65 140 ns Qg Total Gate Charge VGS=10V, VDS=480V ID=20A. (Note3,4) --- 75 98 nC Qgs Gate- --- 13.5 18 nC Qgd Gate-Drain Charge --- 36 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage D=20A --- --- 1.4 V IS Max. Diode Forward Current --- --- --- 20 A ISM Max. Pulsed Forward Curent ---- --- --- 80 A R6012FNX All d ata sheet.com
1, L= Trr Reverse Recovery Time IS=20A,VGS =0V diF/dt=100A/μs(Note3) --- 530 --- Ns qrr Reverse Recovery Charge --- 10.5 --- μc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) 3.45mH, IAS=20A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature www.doingter.cn — 3 — R6012FNX All d ata sheet.com
www.doingter.cn — 4 — R6012FNX All d ata sheet.com
Figure 11. Transient Thermal Response Curve