R5912 HAMAMATSU | Alldatasheet

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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1998 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. GENERAL Parameter Description/Value Unit Spectral Response Wavelength of Maximum Response Photocathode Window Material Dynode Direct Interelectrode Capacitances (Approx.) Base Weight Suitable Socket nm nm cm 2 Typ. pF pF g 300 to 650 420 Bialkali 530 (Min. 450) Borosilicate glass Box and Line 20-pin base JEDEC B20-102 Approx. 720 E678-20A (supplied) Material Effective Area Structure Number of Stages Anode to Last Dynode Anode to All Other Dynode CHARACTERISTICS (at 25 °C) Parameter Min. Unit Cathode Sensitivity Anode Sensitivity Gain 1) Supply Voltage for Gain of 107 Anode Dark Current (after 30min. storage in darkness) 1) Dark Count (after dark condition for 15 hours) 1) Time Response 1) Pre Pulse 4) Late Pulse 3) After Pulse 3) Single Photoelectron Pulse Linearity 2) Magnetic characteristics (at 200mG/20µT) Luminous (2856K) Radiant at 420nm Blue (CS 5-58 filter) Quantum Efficiency at 390nm Luminous (2856K) Radiant at 420nm Anode Pulse Rise Time Electron Transit Time Transit Time Spread (FWHM) 4ns to 20ns before Main pulse 8ns to 60ns after Main pulse 100ns to 16µns after Main pulse PHD (Peak to Valley Ratio) at –2% Deviation at –5% Deviation Sensitivity Degradation 9.0 700 7.2 × 10 1.0 × 107 1500 3.8 2.4 0.5 1.5 2.5 µA/lm mA/W µA/lm-b A/lm A/W V nA kcps ns ns ns mA mA 1800 700 Typ. Max. 1) Measured with the condition shown in the Table 1. 2) Measured with the condition shown in the Table 2. 3) Measured with 0.25 photoelectrons detection threshold (at single photoelectron/ event). 4) Measured with 0.25 photoelectrons detection threshold (at 50 photoelectron/ event).

APPLICATIONS

SEPT. 1998 IP HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 PHOTOMULTIPLIER TUBE R5912 Figure 6: Dimensional Outline and Voltage Divider (Unit: mm) TPMHA0261EB TPMHC0112EA TACCA0003EA Socket (E678-20A) 8 9 11 1213 1920Focus3 DY3 DY5 DY7 NC DY9 P NC NC DY1 K Focus2 DY2 DY4 NC DY6 DY8 Focus1 DY10IC (Bottom View) 220 – 10 290MAX. INPUT WINDOW 20-PIN BASE JEDEC No. B20-102 52.5MAX. R131 202 – 5 190MIN. R20 PHOTOCATHODE 84.5 – 2 52.5 1321 610 R12 R13 R11 R10 DY10 DY9 DY8 DY7 DY6 DY5 DY4 DY3 DY2 DY1 P C3 R7 to R13 C1 to C3 C4, C5 : 1.13MΩ : 60kΩ : 340kΩ : 500kΩ : 333kΩ : 167kΩ : 100kΩ : 0.01µF : 0.0047µF +H.V K