R5900U HAMAMATSU | Alldatasheet

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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 2003 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office. GENERAL Parameter Description/Value Unit Spectral Response Peak Wavelength Photocathode Window Material Dynode Weight Suitable Socket Operating Ambient Temperature Storage Temperature nm nm mm g 300 to 650 420 Bialkali 18 × 18 Borosilicate glass Metal channel dynode Approx. 25.5 E678-32B (sold separately) -30 to +50 -30 to +50 Material Minimum Effective Area Structure Number of Stages CHARACTERISTICS (at 25 °C) Parameter Min. Unit Cathode Sensitivity Anode Sensitivity Gain Anode Dark Current (after 30 min storage in darkness) Time Response Pulse Linearity Luminous (2856 K) Blue Sensitivity Index (CS 5-58) Luminous (2856 K) Anode Pulse Rise Time Transit Time Spread (FWHM) ±2 % deviation 5.0 × 10 140 2.0 × 106 1.5 0.26 µA/lm A/lm nA ns ns mA Typ. Max. NOTE: Anode characteristics are measured with the voltage distribution ratio shown below. MAXIMUM RATINGS (Absolute Maximum Values) Parameter Value Unit Supply Voltage Average Anode Current Between Anode and Cathode V mA 900 0.1 VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Supply Voltage: 800 Vdc, K: Cathode, Dy: Dynode, P: Anode Electrodes Ratio KD y 1 1.5 Dy2 1.5 Dy3 1.5 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P 11 1

Figure 5: Effect of Magnetic Fields on Anode Output TPMHB0261ED Figure 6: Dimensional Outline and Basing Diagram (Unit: mm) TPMHA0278EI -80 -60 -40 -20 0 20 40 60 80 100 110 MAGNETIC FLUX DENSITY (mT) RELATIVE OUTPUT (%) Y X Ebb=-800 V Z Guide Corner (at Rear Side) Y-AXIS Z-AXIS X-AXIS 0.6 ± 0.4 22.0 ± 0.5 30.0 ± 0.5 18 MIN. 4.4 ± 0.7 12.0 ± 0.5 PHOTOCATHODE INSULATION COVER

2.54 PITCH

29- 0.45 Side View Bottom ViewTop View EFFECTIVE AREA 25.7 ± 0.5 Basing Diagram K Dy P CUT IC : Photocathode : Dynode : Anode : Short Pin : Internal Connection (Don't Use) IC IC P IC IC IC IC IC IC IC IC IC IC IC 123456789 32 10 31 11 30 12 29 13 28 14 27 15 26 16 25 1724 23 22 21 20 19 18 K IC (Dy10) IC Dy1 Dy2 Dy3 Dy4 IC (Dy10) CUT (K) CUT (K) Dy10 Dy9 Dy8 Dy7 Dy6 Dy5 IC (Dy10) CUT (K) GUIDE CORNER 4 MAX.

HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it WEB SITE http://www.hamamatsu.com PHOTOMULTIPLIER TUBE R5900U TPMH1109E10 MAR. 2003 IP Printed in Japan (500) [ACCESSORIES] (Unit: mm) G Scoket E678-32B SOLD SEPARATELY G D Type Scoket Assembly E5996 SOLD SEPARATELY TACCA0094ED TACCA0234EC * PATENT: USA Pat. No. 5410211 PATENT PENDING: JAPAN 11, USA 1, EUROPE 2 WARNING ~ High Voltage ~ The product is operated at high voltage potential. Further, the metal housing of the product is connected to the photocathode (potential) so that it becomes a high voltage potential when the product is operated at a negative high voltage (anode grounded). Accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or the damage to the other instruments. 22.86 20.32 20.32 22.86 12.7 2.54 12.7 2.924.45 1.57 0.51 MATERIAL: Glass Epoxy 30.0 ± 0.5 R1 to R3 R4 to R11 R12 to R14 R15 C1 to C3 : 330 kΩ : 220 kΩ : 51 Ω : 1 MΩ : 10 nF DY10 DY9 DY8 DY7 DY6 DY5 DY4 DY3 DY2 DY1 K P POWER SUPPLY GND R11 R10 R14 R12 R15 R13 SIGNAL OUTPUT RG-174/U (BLACK) -HV : RG-174U (RED) PMT SOCKET PIN No. SIGNAL GND PIN No.1 HOUSING (INSULATOR)