R580 HAMAMATSU | Alldatasheet
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1999 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. PHOTOMULTlPLlER TUBE For Scintillation Counting and High Energy Physics GENERAL MAXIMUM RATINGS (Absolute Maximum Values) Parameter Parameter Value Description/Value Unit Spectral Response 300 to 650 nm Wavelength of Maximum Response 420 nm Photocathode MateriaI Bialkali Structure Number of Stages Anode to Last Dynode Anode to All Other Electrodes Minimum Effective Area 34 mm dia. pF pF Window Material Borosilicate glass Dynode Direct Interelectrode Capacitances Base SuitabIe Socket Supply Voltage Between Anode and Cathode Between Anode and Last Dynode 1750 Ambient Temperature Avarage Anode Current -30 to +50 350 0.1 Unit Vdc Vdc mA Linear focused E678–12A(supplied) JEDEC No.B12–43 38mm(1-1/2 lnch) Diameter, 10–stage, Bialkali Photocathode, Head–On Type R580 CHARACTERISTlCS (at 25 ) Parameter Max. Typ.Min. Cathode Sensitivity Gain Anode Dark Current (after 30min. storage in darkness) mA nA Luminous (2856K) 70 Radiant at 420nm Blue (CS 5 58 filter) Luminous (2856K) 9 11 100 150 A/lm–b A/lm %Quantum Efficiency at 420nm 1.1 10 6 32 0 nsElectron Transit Time Transit Time Spread (FWHM) Anode Pulse Rise Time Time Response Pulse Linearity ( 2% deviation) Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P Ratio 2 1 1 1 1 1 1 1 1 1 1 Anode characteristics are measured with the voItage distribution ratio shown below. SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode NOTE: Anode Sensitivity 2.7 4.5 Unit A/lm mA/W VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE ns ns Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P Ratio Parallel Capacitors in F 0.01 0.02 0.04 0.06 2 1 1 1 1 1 1.2 1.5 2.2 3.6 3 SuppIy Voltage :1500Vdc SPECIAL VOLTAGE DlSTRlBUTlON RATlO FOR PULSE LINEARITY MEASUREMENT
HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 HOMEPAGE URL http://www.hamamatsu.com PHOTOMULTlPLlER TUBE R580 Figure 1: Typical Spectral Response Figure 2: Dimensional Outline and Basing Diagram (Unit:mm) BOTTOM VIEW (BASING DIAGRAM) Socket (E678 – 12A) TACCA0009EB TPMH1100E02 DEC. 1999 TPMHB0204EA 200 800 6004000.01 0.1 100 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) WAVELENGTH (nm) CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY TPMHA0121EA DY1 DY3 DY5 DY7 DY9 P 6 7 DY10 DY8 DY6 DY4 DY2 K
12 PIN BASE
No. B12-43 FACEPLATE PHOTO- CATHODE 127MAX 109 2 2- 3.2 34MIN. 38 1 37.3 0.5