R550 HAMAMATSU | Alldatasheet
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Parameter Description/Value Unit Spectral Response Wavelength of Maximum Response Photocathode Window Material Dynode Base Suitable Socket nm nm mm dia. 300 to 850 420 Multialkali Borosilicate glass Box and Grid 14-pin base JEDEC No. B14-38 E678-14A (supplied) Material Minimum Effective Area Structure Number of Stages PHOTOMULTIPLIER TUBE R550 MAXIMUM RATINGS (Absolute Maximum Values) Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1999 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. 300 to 850 nm Response (S-20) 51 mm (2 Inch) Diameter, 10-stage, Head-On Type CHARACTERISTICS (at 25 °C) Parameter Min. Unit Parameter Value Unit Supply Voltage Average Anode Current Ambient Temperature 1500 250 0.3 -30 to +50 Vdc Vdc mA Between Anode and Cathode Between Anode and Last Dynode Cathode Sensitivity Anode Sensitivity Gain Anode Dark Current (after 30min. storage in darkness) Time Response Luminous (2856K) Radiant at 420nm Red/White Ratio (R-68) Luminous (2856K) Radiant at 420nm Anode Pulse Rise Time Electron Transit Time 100 150 0.2 100 4.3 × 10 6.7 × 105 9.0 µA/lm mA/W A/lm A/W nA ns ns Typ. Max. Supply Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: Anode VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE Electrodes Ratio K Dy1 G Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P 1111 NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
Figure 1: Typical Spectral Response TPMH1247E02 DEC. 1999 TPMHB0001EB Figure 2: Typical Gain Characteristics TPMHB0599EA Figure 3: Dimensional Outline and Basing Diagram (Unit: mm) TPMHA0210EB TACCA0044EB Socket (Option) (E678-14A) 500 600 700 800 1000 1200 1400 107 106 105 104 103 102 SUPPLY VOLTAGE (V) GAIN 51.0–0.5 46MIN.FACEPLATE PHOTO- CATHODE 124–2 147MAX. 56.5–0.5
14 PIN BASE
No. B14-38 7 8 9 DY1 DY2 IC DY4 DY5 DY6 DY7 DY8 DY9 DY10 P DY3 G K 19.8 172 200 800 600400 0.01 0.1 100 WAVELENGTH (nm) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY 1000 HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 HOMEPAGE URL http://www.hamamatsu.com