R5108 HAMAMATSU | Alldatasheet
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28mm (1-1/8 Inch) Transmission Mode S–1 Photocathode, Side–on Type GENERAL
FEATURES
Parameter Description Unit Spectral Response Wavelength of Maximum Response 400 to 1200 nm nm Photocathode MateriaI 800 Structure 1.2 pFAnode to Last Dynode 3.4 pFAnode to All Other Electrodes Minimum Effective Area Ag–O–Cs mm Window Material 16(H) 18(W) Dynode Direct Interelectrode Capacitances Base Applicable Socket Assembly Borosilicate glass Circular-cage Number of Stages 9 11-pin base JEDEC No. B11-88 E717–21 (option) SuitabIe Socket E678–11A (option) Wide Photocathode Excellent Spatial Uniformity Fast Time Response
APPLICATIONS
Near Infrared Spectrophotometer Raman Spectrophotometer Photo Luminescence Measurement Figure 1: Electron Trajectories PHOTOMULTlPLlER TUBE R5108 TPMSC0003EB LIGHT PHOTOCATHODE GLASS BULB FOCUSING ELECTRODES 1st DYNODE 3rd DYNODE 2nd DYNODE PHOTOELECTRONS High Infrared Sensitivity Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1994 Hamamatsu Photonics K.K.
Figure 2: Typical Spatial Uniformity TPMSB0066EA Y X 100 84 04 8 RELATIVE SENSITIVITY (%) DISTANCE FROM CENTER OF PHOTOCATHODE (mm) RELATIVE SENSITIVITY (%) 100 9 4.5 0 94.5 DISTANCE FROM CENTER OF PHOTOCATHODE (mm) SPOTSIZE : 1mm DIA SUPPLY VOLTAGE : 1000V WAVELENGTH : 400nm X-Axis Y-Axis Supply Voltage Between Anode and Cathode Between Anode and Last Dynode 1500 250 0.1 Vdc Vdc mAAverage Anode Current A CHARACTERISTlCS (at 25 ) NOTES Cathode Sensitivity Anode Dark Current D (after 30min. storage in the darkness) Averaged over any interval of 30 seconds maximum. The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 150 volts between the cathode and all other electrodes connected together as anode. Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Radiant at 800nm Anode Pulse Rise Time E Electron Transit Time F Time Response Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P Ratio 1 111111111 SuppIy Voltage : 1250Vdc K : Cathode, Dy : Dynode, P : AnodeQuantum Efficiency at 1060nm 0.04 Gain C 3.0 105 MAXIMUM RATINGS (Absolute Maximum Values) Parameter Value Unit PHOTOMULTlPLlER TUBE R5108 Luminous B 10 2.2 Table 1:Voltage Distribution Ratio Parameter Typ. Min. Max. Unit Anode Sensitivity Luminous C 1.2 mA/W ns ns A/lm nA 3.5 7.5 1000350 A/lm Measured at the voltage which gives anode luminous sensitivity of 4A/lm. The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated.
JUL. 1994 Figure 7: Dimensional Outline and Basing Diagram (Unit: mm) Figure 8: Optional Accessories (Unit: mm) D Type Socket Assembly E717-21Socket E678-11A Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. R 1 to R10 : 330k C 1 to C3 : 0.01 F POTTING COMPOUND TACCA0002ED R to R10 C1 to C3 : 330k : 0.01 F 3.5 33.0 0.3 49.0 0.3 38.0 0.3 4.8 41.0 0.5450 10 31.0 0.5 HOUSING (INSULATOR) R10 DY9 DY8 DY7 DY6 DY5 DY4 DY3 DY2 DY1 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) –HV AWG22 (VIOLET) P K POWER SUPPLY GND AWG22 (BLACK) SOCKET PIN No.PMT PHOTOMULTlPLlER TUBE R5108 BOTTOM VIEW (BASING DIAGRAM) 3.5 TACCA0008EB 4 TPMSA0023EA 5 76 KDY1 DY2 DY3 DY4 DY5 DY6 DY7 DY8 DY9 P DIRECTION OF LIGHT 29.0 1.7 18MIN. PHOTOCATHODE 16MIN. 49.0 2.5 76MAX. 90MAX.
11 PIN BASE
JEDEC No. B11-88 34MAX. HA COATING HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741